초록 ▼

An image sensor having a plurality of pixels arranged in a series of row and columns comprising: a semiconductor substrate having a plurality of pixels formed in rows and columns with at least two row adjacent pixels and at least two column adjacent pixels formed within the substrate; and at least o

An image sensor having a plurality of pixels arranged in a series of row and columns comprising: a semiconductor substrate having a plurality of pixels formed in rows and columns with at least two row adjacent pixels and at least two column adjacent pixels formed within the substrate; and at least one electrical function integrated within the adjacent pixels that is shared between the adjacent pixels. The electrical function can be either a contact region or an electrical circuit used in implementing either a photogate, a transfer gate, a reset gate, a row select gate, an amplifier drain, an output node, a floating diffusion contact, a reset drain, a lateral overflow gate, an overflow drain or an amplifier.

대표청구항 ▼

[ What is claimed is:] [1.] An image sensor having a plurality of pixels arranged in a series of rows and columns comprising:a semiconductor material of a first conductivity type;at least two row adjacent pixels and at least two column adjacent pixels formed within the substrate; andat least one sha

[ What is claimed is:] [1.] An image sensor having a plurality of pixels arranged in a series of rows and columns comprising:a semiconductor material of a first conductivity type;at least two row adjacent pixels and at least two column adjacent pixels formed within the substrate; andat least one shared contact region wherein the contact region is shared between the adjacent pixels and wherein the shared contact is selected from one of the following components (a photogate contact, a reset gate contact, a row select gate contact, an amplifier drain contact, an output node contact, a floating diffusion contact, a reset drain contact, a lateral overflow gate contact, or an amplifier contact).