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Method for manufacturing an epitaxial wafer with a group III metal nitride epitaxial layer 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/20
출원번호 US-0102675 (1998-06-23)
우선권정보 TW-0104571 (1998-03-26)
발명자 / 주소
  • Sze Simon M.,TWX
  • Chan Shih-Hsiung,TWX
  • Tsang Jian-Shihn,TWX
  • Guo Jan-Dar,TWX
  • Lai Wei-Chi,TWX
대리인 / 주소
    Merchant & Gould P.C.
인용정보 피인용 횟수 : 35  인용 특허 : 1

초록 ▼

A new method for manufacturing a Group III metal nitride epitaxial wafer comprises providing a first nitrogen-contained gas source, providing a second Group III metal trichloride--containing gas source, and causing said first gas to react with second gas in a heating region, thereby forming a Group

대표청구항 ▼

[ What is claimed is:] [1.] A method for manufacturing an epitaxial wafer, suitable for forming a Group III metal nitride epitaxial layer on a substrate, comprising:providing a substrate;providing a first gas source, wherein said first gas contains an element of nitrogen;providing a second gas, wher

이 특허에 인용된 특허 (1)

  1. Jacob Guy M. (Creteil FRX) Hallais Jean P. (Ablon FRX), Vapor deposition of single crystal gallium nitride.
    상세보기

이 특허를 인용한 특허 (35)

  1. Arena, Chantal; Werkhoven, Christiaan, Abatement of reaction gases from gallium nitride deposition.
    상세보기
  2. Arena, Chantal; Werkhoven, Christiaan, Abatement of reaction gases from gallium nitride deposition.
    상세보기
  3. Dmitriev, Vladimir A.; Kovalenkov, Oleg V.; Ivantsov, Vladimir; Shapovalov, Lisa; Syrkin, Alexander L.; Volkova, Anna; Sizov, Vladimir; Usikov, Alexander; Soukhoveev, Vitali A., Apparatus and methods for controlling gas flows in a HVPE reactor.
    상세보기
  4. Tsvetkov, Denis V.; Nikolaev, Andrey E.; Dmitriev, Vladimir A., Apparatus for epitaxially growing semiconductor device structures with sharp layer interfaces utilizing HVPE.
    상세보기
  5. Tsvetkov, Denis V.; Nikolaev, Andrey E.; Dmitriev, Vladimir A., Apparatus for epitaxially growing semiconductor device structures with submicron group III nitride layer utilizing HVPE.
    상세보기
  6. Melnik, Yuri V.; Soukhoveev, Vitali; Ivantsov, Vladimir; Tsvetkov, Katie; Dmitriev, Vladimir A., Bulk GaN and ALGaN single crystals.
    상세보기
  7. Arena, Chantal; Werkhoven, Christiaan, Equipment for high volume manufacture of group III-V semiconductor materials.
    상세보기
  8. Wang, Tao, GaN structures having low dislocation density and methods of manufacture.
    상세보기
  9. Arena, Chantal; Werkhoven, Christiaan, Gallium trichloride injection scheme.
    상세보기
  10. Arena, Chantal; Werkhoven, Christiaan, Gallium trichloride injection scheme.
    상세보기
  11. Arena, Chantal; Werkhoven, Christiaan, Gallium trichloride injection scheme.
    상세보기
  12. Arena, Chantal; Bertram, Jr., Ronald Thomas; Lindow, Ed; Werkhoven, Christiaan, Gas injectors including a funnel- or wedge-shaped channel for chemical vapor deposition (CVD) systems and CVD systems with the same.
    상세보기
  13. Koike, Masayoshi; Yamasaki, Shiro, Group III nitride compound semiconductor device.
    상세보기
  14. Koike, Masayoshi; Yamasaki, Shiro, Group III nitride compound semiconductor device.
    상세보기
  15. Dmitriev, Vladimir A.; Kovalenkov, Oleg V.; Ivantsov, Vladimir; Shapovalov, Lisa; Syrkin, Alexander L.; Volkova, Anna; Sizov, Vladimir; Usikov, Alexander; Soukhoveev, Vitali A., HVPE apparatus and methods for growth of p-type single crystal group III nitride materials.
    상세보기
  16. Dmitriev, Vladimir A.; Tsvetkov, Denis V.; Pechnikov, Aleksei; Melnik, Yuri V.; Usikov, Aleksandr; Kovalenkov, Oleg, Manufacturing methods for semiconductor devices with multiple III-V material layers.
    상세보기
  17. Alexander Michael N., Method and apparatus for depositing thin films of group III nitrides and other films and devices made therefrom.
    상세보기
  18. Dmitriev,Vladimir A.; Melnik,Yuri V., Method and apparatus for fabricating crack-free Group III nitride semiconductor materials.
    상세보기
  19. Tsvetkov, Denis V.; Nikolaev, Andrey E.; Dmitriev, Vladimir A., Method of epitaxially growing device structures with sharp layer interfaces utilizing HVPE.
    상세보기
  20. Tsvetkov, Denis V.; Nikolaev, Andrey E.; Dmitriev, Vladimir A., Method of epitaxially growing device structures with submicron group III nitride layers utilizing HVPE.
    상세보기
  21. Tsvetkov, Denis V.; Nikolaev, Andrey E.; Dmitriev, Vladimir A., Method of epitaxially growing submicron group III nitride layers utilizing HVPE.
    상세보기
  22. Werkhoven, Christiaan J., Methods for forming semiconductor materials by atomic layer deposition using halide precursors.
    상세보기
  23. Arena, Chantal; Werkhoven, Christiaan, Methods for high volume manufacture of group III-V semiconductor materials.
    상세보기
  24. Burrows, Brian H.; Tam, Alexander; Stevens, Ronald; Choi, Kenric T.; Felsch, James D.; Grayson, Jacob; Acharya, Sumedh; Nijhawan, Sandeep; Washington, Lori D.; Myo, Nyi O., Multi-gas straight channel showerhead.
    상세보기
  25. Utsumi,Wataru; Saitoh,Hiroyuki; Aoki,Katsutoshi, Process for producing single-crystal gallium nitride.
    상세보기
  26. Melnik,Yuri V.; Soukhoveev,Vitali; Ivantsov,Vladimir; Tsvetkov,Katie; Dmitriev,Vladimir A., Reactor for extended duration growth of gallium containing single crystals.
    상세보기
  27. Preble, Edward A.; Liu, Lianghong; Hanser, Andrew D.; Williams, N. Mark; Xu, Xueping, Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancement.
    상세보기
  28. Preble, Edward A.; Liu, Lianghong; Hanser, Andrew D.; Williams, N. Mark; Xu, Xueping, Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancement.
    상세보기
  29. Preble, Edward; Liu, Lianghong; Hanser, Andrew D.; Williams, N. Mark; Xu, Xueping, Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancement.
    상세보기
  30. Preble, Edward; Liu, Lianghong; Hanser, Andrew D.; Williams, N. Mark; Xu, Xueping, Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancement.
    상세보기
  31. Werkhoven, Christiaan J., Systems and methods for forming semiconductor materials by atomic layer deposition.
    상세보기
  32. Werkhoven, Christiaan J., Systems for forming semiconductor materials by atomic layer deposition.
    상세보기
  33. Arena, Chantal; Werkhoven, Christiaan, Temperature-controlled purge gate valve for chemical vapor deposition chamber.
    상세보기
  34. Arena, Chantal; Werkhoven, Christiaan, Temperature-controlled purge gate valve for chemical vapor deposition chamber.
    상세보기
  35. Bertram, Jr., Ronald Thomas, Thermalizing gas injectors for generating increased precursor gas, material deposition systems including such injectors, and related methods.
    상세보기

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