$\require{mediawiki-texvc}$

연합인증

연합인증 가입 기관의 연구자들은 소속기관의 인증정보(ID와 암호)를 이용해 다른 대학, 연구기관, 서비스 공급자의 다양한 온라인 자원과 연구 데이터를 이용할 수 있습니다.

이는 여행자가 자국에서 발행 받은 여권으로 세계 각국을 자유롭게 여행할 수 있는 것과 같습니다.

연합인증으로 이용이 가능한 서비스는 NTIS, DataON, Edison, Kafe, Webinar 등이 있습니다.

한번의 인증절차만으로 연합인증 가입 서비스에 추가 로그인 없이 이용이 가능합니다.

다만, 연합인증을 위해서는 최초 1회만 인증 절차가 필요합니다. (회원이 아닐 경우 회원 가입이 필요합니다.)

연합인증 절차는 다음과 같습니다.

최초이용시에는
ScienceON에 로그인 → 연합인증 서비스 접속 → 로그인 (본인 확인 또는 회원가입) → 서비스 이용

그 이후에는
ScienceON 로그인 → 연합인증 서비스 접속 → 서비스 이용

연합인증을 활용하시면 KISTI가 제공하는 다양한 서비스를 편리하게 이용하실 수 있습니다.

[미국특허] Method for forming an ohmic electrode 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/3205
출원번호 US-0054498 (1998-04-03)
우선권정보 JP-0093674 (1997-04-11)
발명자 / 주소
  • Ota Yorito,JPX
  • Masato Hiroyuki,JPX
  • Kumabuchi Yasuhito,JPX
  • Kitabatake Makoto,JPX
출원인 / 주소
  • Matsushita Electric Industrial Co., Ltd., JPX
대리인 / 주소
    McDermott, Will & Emery
인용정보 피인용 횟수 : 112  인용 특허 : 4

초록 ▼

A first metal film and a second metal film, both of which are made of Ni or the like, are deposited on the upper surface of a substrate made of SiC. In such a state, the interface between the first metal film and the substrate and the interface between the second metal film and the substrate both fo

대표청구항 ▼

[ What is claimed is:] [1.] A method for forming an ohmic electrode, comprising the steps of:forming an insulator film on a surface of a substrate made of silicon carbide, the insulator film having an opening through which the surface of the substrate is exposed;depositing a metal film in the openin

이 특허에 인용된 특허 (4) 인용/피인용 타임라인 분석

  1. Onishi Takashi,JPX ; Yoshikawa Kazuo,JPX ; Nishi Seiji,JPX ; Yamamoto Seigou,JPX, A1 alloy films and melting A1 alloy sputtering targets for depositing A1 alloy films.
    상세보기
  2. Agarwal Anant K. (Monroeville PA) Messham Rowan L. (Murrysville PA) Driver Michael C. (McKeesport PA), Aluminum gallium nitride based heterojunction bipolar transistor.
    상세보기
  3. Furukawa Katsuki (Sakai JPX) Suzuki Akira (Nara JPX) Shigeta Mitsuhiro (Nara JPX) Uemoto Atsuko (Nara JPX), Electrode structure for silicon carbide semiconductors.
    상세보기
  4. Furukawa Katsuki (Sakai JPX) Suzuki Akira (Nara JPX) Fujii Yoshihisa (Nara JPX), Silicon carbide semiconductor device with ohmic electrode consisting of alloy.
    상세보기

이 특허를 인용한 특허 (112) 인용/피인용 타임라인 분석

  1. Tomoda,Katsuhiro; Ohata,Toyoharu, Alloy method using laser irradiation.
    상세보기
  2. Tomoda, Katsuhiro; Ohata, Toyoharu, Alloying method for a image display device using laser irradiation.
    상세보기
  3. Tomoda,Katsuhiro; Ohata,Toyoharu, Alloying method using laser irradiation for a light emitting device.
    상세보기
  4. Tomoda,Katsuhiro; Ohata,Toyoharu, Alloying method, and wiring forming method, display device forming method, and image display unit fabricating method.
    상세보기
  5. Bai, Jie; Lochtefeld, Anthony J.; Park, Ji-Soo, Defect reduction using aspect ratio trapping.
    상세보기
  6. Bai, Jie; Lochtefeld, Anthony J.; Park, Ji-Soo, Defect reduction using aspect ratio trapping.
    상세보기
  7. Bai, Jie; Park, Ji-Soo; Lochtefeld, Anthony J., Defect reduction using aspect ratio trapping.
    상세보기
  8. Lochtefeld, Anthony J., Devices formed from a non-polar plane of a crystalline material and method of making the same.
    상세보기
  9. Lochtefeld, Anthony J., Devices formed from a non-polar plane of a crystalline material and method of making the same.
    상세보기
  10. Lochtefeld, Anthony J., Devices formed from a non-polar plane of a crystalline material and method of making the same.
    상세보기
  11. Lochtefeld, Anthony J., Diode-based devices and methods for making the same.
    상세보기
  12. Lochtefeld, Anthony J., Diode-based devices and methods for making the same.
    상세보기
  13. Lochtefeld, Anthony J., Diode-based devices and methods for making the same.
    상세보기
  14. Lochtefeld, Anthony J., Diode-based devices and methods for making the same.
    상세보기
  15. Lochtefeld, Anthony J., Diode-based devices and methods for making the same.
    상세보기
  16. Ryu, Sei-Hyung; Agarwal, Anant K.; Ward, Allan, Edge termination structures for silicon carbide devices.
    상세보기
  17. Passlack, Matthias; Hartin, Olin L.; Ray, Marcus; Medendorp, Nicholas, Enhancement mode metal-oxide-semiconductor field effect transistor.
    상세보기
  18. Singh, Ranbir, Epitaxial edge termination for silicon carbide Schottky devices and methods of fabricating silicon carbide devices incorporating same.
    상세보기
  19. Park, Ji-Soo, Epitaxial growth of crystalline material.
    상세보기
  20. Park, Ji-Soo, Epitaxial growth of crystalline material.
    상세보기
  21. Park, Ji-Soo; Fiorenza, James G., Fabrication and structures of crystalline material.
    상세보기
  22. Vieira,Amarildo J. C.; Barenburg,Barbara F.; Brophy,Timothy J., Fabrication of a wavelength locker within a semiconductor structure.
    상세보기
  23. Liang, Yong; Droopad, Ravindranath; Li, Hao; Yu, Zhiyi, Ferromagnetic semiconductor structure and method for forming the same.
    상세보기
  24. Cheng, Zhiyuan; Fiorenza, James; Hydrick, Jennifer M.; Lochtefeld, Anthony J.; Park, Ji-Soo; Bai, Jie; Li, Jizhong, Formation of devices by epitaxial layer overgrowth.
    상세보기
  25. Hydrick, Jennifer M.; Li, Jizhong; Cheng, Zhinyuan; Fiorenza, James; Bai, Jie; Park, Ji-Soo; Lochtefeld, Anthony J., Formation of devices by epitaxial layer overgrowth.
    상세보기
  26. Cole, Melanie W.; Joshi, Pooran C., Formulation and fabrication of an improved Ni based composite Ohmic contact to n-SiC for high temperature and high power device applications.
    상세보기
  27. Yokogawa, Ken'etsu; Miyake, Masatoshi, Heat treatment apparatus that performs defect repair annealing.
    상세보기
  28. El Zein,Nada; Ramdani,Jamal; Eisenbeiser,Kurt; Droopad,Ravindranath, Heterojunction tunneling diodes and process for fabricating same.
    상세보기
  29. Ye, Peide; Cheng, Zhiyuan; Xuan, Yi; Wu, Yanqing; Adekore, Bunmi; Fiorenza, James, InP-based transistor fabrication.
    상세보기
  30. Ye, Peide; Cheng, Zhiyuan; Xuan, Yi; Wu, Yanqing; Adekore, Bunmi; Fiorenza, James, InP-based transistor fabrication.
    상세보기
  31. Mai, Zhihong; Toh, Suey Li; Tan, Pik Kee; Lam, Jeffrey C.; Hsia, Liang-Choo, Integrated circuit system employing backside energy source for electrical contact formation.
    상세보기
  32. Lochtefeld, Anthony J., Lattice-mismatched semiconductor structures and related methods for device fabrication.
    상세보기
  33. Lochtefeld, Anthony J., Lattice-mismatched semiconductor structures and related methods for device fabrication.
    상세보기
  34. Li, Jizhong; Lochtefeld, Anthony J., Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication.
    상세보기
  35. Lochtefeld, Anthony J.; Currie, Matthew T.; Cheng, Zhiyuan; Fiorenza, James; Braithwaite, Glyn; Langdo, Thomas A., Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication.
    상세보기
  36. Lochtefeld, Anthony J.; Currie, Matthew T.; Cheng, Zhiyuan; Fiorenza, James; Braithwaite, Glyn; Langdo, Thomas A., Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication.
    상세보기
  37. Lochtefeld, Anthony J.; Currie, Matthew T.; Cheng, Zhiyuan; Fiorenza, James; Braithwaite, Glyn; Langdo, Thomas A., Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication.
    상세보기
  38. Lochtefeld, Anthony J.; Currie, Matthew T.; Cheng, Zhiyuan; Fiorenza, James; Braithwaite, Glyn; Langdo, Thomas A., Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication.
    상세보기
  39. Lochtefeld, Anthony J.; Currie, Matthew T.; Cheng, Zhiyuan; Fiorenza, James; Braithwaite, Glyn; Langdo, Thomas A., Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication.
    상세보기
  40. Lochtefeld, Anthony J.; Currie, Matthew T.; Cheng, Zhiyuan; Fiorenza, James; Braithwaite, Glyn; Langdo, Thomas A., Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication.
    상세보기
  41. Lochtefeld, Anthony J.; Currie, Matthew T.; Cheng, Zhiyuan; Fiorenza, James; Braithwaite, Glyn; Langdo, Thomas A., Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication.
    상세보기
  42. Li, Jizhong; Lochtefeld, Anthony J., Light-emitter-based devices with lattice-mismatched semiconductor structures.
    상세보기
  43. Slater, Jr., David B.; Edmond, John; Donofrio, Matthew, Localized annealing of metal-silicon carbide ohmic contacts and devices so formed.
    상세보기
  44. Ooms,William J.; Hallmark,Jerald A., Method and apparatus utilizing monocrystalline insulator.
    상세보기
  45. Bruel, Michel, Method and device for heating a layer of a plate by priming and light flow.
    상세보기
  46. Tomoda,Katsuhiro; Ohata,Toyoharu, Method for alloying a wiring portion for a image display device.
    상세보기
  47. Ramdani, Jamal; Droopad, Ravindranath; Yu, Zhiyi, Method for fabricating a semiconductor structure including a metal oxide interface with silicon.
    상세보기
  48. Liang,Yong; Droopad,Ravindranath; Hu,Xiaoming; Wang,Jun; Wei,Yi; Yu,Zhiyi, Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process.
    상세보기
  49. Li, Hao; Droopad, Ravindranath; Marshall, Daniel S.; Wei, Yi; Hu, Xiao M.; Liang, Yong, Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate.
    상세보기
  50. Bruel, Michel, Method for heating a wafer by means of a light flux.
    상세보기
  51. Reiley, Timothy Clark; Strand, Timothy Carl, Method for making ohmic contact to silicon structures with low thermal loads.
    상세보기
  52. Masuda, Takashi, Method for manufacturing silicon carbide semiconductor device.
    상세보기
  53. Cheng, Zhiyuan; Fiorenza, James; Sheen, Calvin; Lochtefeld, Anthony J., Method for semiconductor sensor structures with reduced dislocation defect densities.
    상세보기
  54. Malhan,Rajesh Kumar; Takeuchi,Yuichi; Nikitina,Irina; Vassilevski,Konstantin; Wright,Nicholas; Horsfall,Alton, Method of forming an ohmic contact in wide band semiconductor.
    상세보기
  55. Rupp, Roland; Woehlert, Stefan; Gutt, Thomas; Treu, Michael, Method of manufacturing a device by locally heating one or more metalization layers and by means of selective etching.
    상세보기
  56. Rupp, Roland; Woehlert, Stefan; Gutt, Thomas; Treu, Michael, Method of manufacturing a device by locally heating one or more metalization layers and by means of selective etching.
    상세보기
  57. Rupp, Roland; Woehlert, Stefan; Gutt, Thomas; Treu, Michael, Method of manufacturing a device by locally heating one or more metallization layers and by means of selective etching.
    상세보기
  58. Endou,Takeshi; Takeuchi,Yuuichi, Method of manufacturing silicon carbide semiconductor device.
    상세보기
  59. Hu, Xiaoming; Craigo, James B.; Droopad, Ravindranath; Edwards, Jr., John L.; Liang, Yong; Wei, Yi; Yu, Zhiyi, Method of removing silicon oxide from a surface of a substrate.
    상세보기
  60. Cheng, Zhiyuan; Fiorenza, James; Sheen, Calvin; Lochtefeld, Anthony J., Methods for semiconductor sensor structures with reduced dislocation defect densities.
    상세보기
  61. Ryu,Sei Hyung; Agarwal,Anant K., Methods of fabricating silicon carbide devices including multiple floating guard ring edge termination.
    상세보기
  62. Ryu, Sei-Hyung; Agarwal, Anant K., Methods of fabricating silicon carbide devices incorporating multiple floating guard ring edge terminations.
    상세보기
  63. Ryu, Sei-Hyung; Agarwal, Anant K., Methods of fabricating silicon carbide devices incorporating multiple floating guard ring edge terminations.
    상세보기
  64. Mayer, Eric; Alberti, Marc, Methods of forming ohmic layers through ablation capping layers.
    상세보기
  65. Lochtefeld, Anthony J., Methods of forming semiconductor diodes by aspect ratio trapping with coalesced films.
    상세보기
  66. Fiorenza, James; Lochtefeld, Anthony J., Multi-junction solar cells.
    상세보기
  67. Fiorenza, James; Lochtefeld, Anthony J., Multi-junction solar cells.
    상세보기
  68. Ryu,Sei Hyung; Agarwal,Anant K., Multiple floating guard ring edge termination for silicon carbide devices.
    상세보기
  69. Li, Jizhong, Nitride-based multi-junction solar cell modules and methods for making the same.
    상세보기
  70. Li, Jizhong, Nitride-based multi-junction solar cell modules and methods for making the same.
    상세보기
  71. Li, Jizhong; Lochtefeld, Anthony J.; Sheen, Calvin; Cheng, Zhiyuan, Photovoltaics on silicon.
    상세보기
  72. Hydrick, Jennifer M.; Fiorenza, James, Polishing of small composite semiconductor materials.
    상세보기
  73. Hydrick, Jennifer M.; Fiorenza, James, Polishing of small composite semiconductor materials.
    상세보기
  74. Hydrick, Jennifer M.; Fiorenza, James G., Polishing of small composite semiconductor materials.
    상세보기
  75. Cole,Melanie W.; Weihs,Timothy P., Process for nickel silicide Ohmic contacts to n-SiC.
    상세보기
  76. Cheng, Zhiyuan; Sheen, Calvin, Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures.
    상세보기
  77. Cheng, Zhiyuan; Sheen, Calvin, Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures.
    상세보기
  78. Cheng, Zhiyuan; Sheen, Calvin, Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures.
    상세보기
  79. Cheng, Zhiyuan; Sheen, Calvin, Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures.
    상세보기
  80. Cheng, Zhiyuan; Sheen, Calvin, Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures.
    상세보기
  81. Cheng, Zhiyuan, Reduction of edge effects from aspect ratio trapping.
    상세보기
  82. Cheng, Zhiyuan, Reduction of edge effects from aspect ratio trapping.
    상세보기
  83. Cheng, Zhiyuan, Reduction of edge effects from aspect ratio trapping.
    상세보기
  84. Cheng, Zhiyuan, Reduction of edge effects from aspect ratio trapping.
    상세보기
  85. Cheng, Zhiyuan, Reduction of edge effects from aspect ratio trapping.
    상세보기
  86. Biwa, Goshi; Okuyama, Hiroyuki, Selective growth method, and semiconductor light emitting device and fabrication method thereof.
    상세보기
  87. Biwa, Goshi; Okuyama, Hiroyuki, Selective growth method, and semiconductor light emitting device and fabrication method thereof.
    상세보기
  88. Biwa,Goshi; Okuyama,Hiroyuki, Selective growth method, and semiconductor light emitting device and fabrication method thereof.
    상세보기
  89. Wood,Dustin P.; Mallik,Debendra, Selective plating of package terminals.
    상세보기
  90. Wood,Dustin P.; Mallik,Debendra, Selective plating of package terminals.
    상세보기
  91. Eisenbeiser,Kurt; Wang,Jun; Droopad,Ravindranath, Semiconductor device and method.
    상세보기
  92. Tamaso, Hideto, Semiconductor device and method of manufacturing the same.
    상세보기
  93. Nakazawa, Haruo; Tachioka, Masaaki; Fujishima, Naoto; Ogino, Masaaki; Nakajima, Tsunehiro; Iguchi, Kenichi, Semiconductor device manufacturing method.
    상세보기
  94. Lochtefeld, Anthony J., Semiconductor diodes fabricated by aspect ratio trapping with coalesced films.
    상세보기
  95. Lochtefeld, Anthony J., Semiconductor diodes fabricated by aspect ratio trapping with coalesced films.
    상세보기
  96. Lochtefeld, Anthony J., Semiconductor diodes fabricated by aspect ratio trapping with coalesced films.
    상세보기
  97. Okuyama,Hiroyuki; Biwa,Goshi, Semiconductor light emitting device and fabrication method thereof.
    상세보기
  98. Suzuki, Jun; Okuyama, Hiroyuki; Biwa, Goshi; Morita, Etsuo, Semiconductor light emitting device and fabrication method thereof.
    상세보기
  99. Cheng, Zhiyuan; Fiorenza, James G.; Sheen, Calvin; Lochtefeld, Anthony, Semiconductor sensor structures with reduced dislocation defect densities.
    상세보기
  100. Cheng, Zhiyuan; Fiorenza, James; Sheen, Calvin; Lochtefeld, Anthony J., Semiconductor sensor structures with reduced dislocation defect densities.
    상세보기
  101. Yu,Zhiyi; Droopad,Ravindranath, Semiconductor structure exhibiting reduced leakage current and method of fabricating same.
    상세보기
  102. Ramdani,Jamal; Droopad,Ravindranath; Hilt,Lyndee L.; Eisenbeiser,Kurt Williamson, Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same.
    상세보기
  103. Thei, Kong-Beng; Yu, Jiun-Lei Jerry; Tsai, Chun Lin; Tuan, Hsiao-Chin; Kalnitsky, Alex, SiC crystalline on Si substrates to allow integration of GaN and Si electronics.
    상세보기
  104. Ryu, Sei-Hyung; Agarwal, Anant K., Silicon carbide junction barrier Schottky diodes with suppressed minority carrier injection.
    상세보기
  105. Ramdani,Jamal; Hilt,Lyndee L., Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate.
    상세보기
  106. Emrick, Rudy M.; Bosco, Bruce Allen; Holmes, John E.; Franson, Steven James; Rockwell, Stephen Kent, Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same.
    상세보기
  107. Eisenbeiser, Kurt W.; Yu, Zhiyi; Droopad, Ravindranath, Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same.
    상세보기
  108. Holm, Paige M.; Barenburg, Barbara Foley; Yamamoto, Joyce K.; Richard, Fred V., Structure and method for fabricating semiconductor microresonator devices.
    상세보기
  109. Lempkowski,Robert; Chason,Marc, Structure and method for fabricating semiconductor structures and devices for detecting an object.
    상세보기
  110. Tungare,Aroon; Klosowiak,Tomasz L., Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials.
    상세보기
  111. Krutko, Oleh; Xie, Kezhou; Shokrani, Mohsen; Gupta, Aditya; Gedzberg, Boris, Structures and methods for fabricating vertically integrated HBT-FET device.
    상세보기
  112. Quick, Nathaniel R; Murray, Michael C, Thermal doping of materials.
    상세보기

활용도 분석정보

상세보기
다운로드
내보내기

활용도 Top5 특허

해당 특허가 속한 카테고리에서 활용도가 높은 상위 5개 콘텐츠를 보여줍니다.
더보기 버튼을 클릭하시면 더 많은 관련자료를 살펴볼 수 있습니다.

관련 콘텐츠

저작권 관리 안내
섹션별 컨텐츠 바로가기

AI-Helper ※ AI-Helper는 오픈소스 모델을 사용합니다.

AI-Helper 아이콘
AI-Helper
안녕하세요, AI-Helper입니다. 좌측 "선택된 텍스트"에서 텍스트를 선택하여 요약, 번역, 용어설명을 실행하세요.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.

선택된 텍스트

맨위로