[특허]RF powered plasma enhanced chemical vapor deposition reactor and methods

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	C23C-016/00 H05H-001/00
출원번호	US-0026566 (1998-02-19)
발명자 / 주소	Sharan Sujit Sandhu Gurtej S. Smith Paul
출원인 / 주소	Applied Materials, Inc.
대리인 / 주소	Wells, St. John, Roberts, Gregory & Matkin P.S.
인용정보	피인용 횟수 : 39 인용 특허 : 23

초록 ▼

Plasma enhanced chemical vapor deposition (PECVD) reactors and methods of effecting the same are described. In a preferred implementation, a PECVD reactor includes a processing chamber having a first electrode therewithin. A second electrode is disposed within the chamber and is configured for suppo

Plasma enhanced chemical vapor deposition (PECVD) reactors and methods of effecting the same are described. In a preferred implementation, a PECVD reactor includes a processing chamber having a first electrode therewithin. A second electrode is disposed within the chamber and is configured for supporting at least one semiconductor workpiece for processing. A first RF power source delivers RF power of a first frequency to the first electrode. A second RF power source delivers RF power of a second frequency to the second electrode. Preferably the first and second frequencies are different from one another, and even more preferably, the first frequency is greater than the second frequency. The preferred reactor includes a thermocouple which provides temperature information relative to one of the electrodes. According to a preferred implementation, the power loop developed by the first RF power source is grounded interiorly of the chamber in a manner which reduces if not eliminates interference with other reactor components including the thermocouple.

대표청구항 ▼

[ What is claimed is:] [1.] A plasma enhanced chemical vapor deposition (PECVD) reactor comprising:a processing chamber;a first electrode within the chamber, the first electrode being a shower head electrode configured to introduce reactants into the reactor;a second electrode within the chamber and

[ What is claimed is:] [1.] A plasma enhanced chemical vapor deposition (PECVD) reactor comprising:a processing chamber;a first electrode within the chamber, the first electrode being a shower head electrode configured to introduce reactants into the reactor;a second electrode within the chamber and configured for supporting at least one semiconductor workpiece for processing, the first and second electrodes defining respective plates of a parallel plate PECVD reactor and constituting the only reactor electrodes which are capable of being powered;a first RF power source associated with the chamber and operatively connected with the first electrode to deliver RF power of a first frequency, the first RF power source providing a first RF frequency power loop; anda second RF power source associated with the chamber and operatively connected with the second electrode to deliver RF power of a second frequency which is different from the first frequency, wherein:the chamber includes a chamber interior at least a portion of which is grounded;the second RF power source is connected with the second electrode via a power line a portion of which is disposed inside the chamber; and further comprising:a grounding path for the first RF frequency loop inside the chamber, the grounding path comprising at least a portion of the power line which is disposed inside the chamber, the grounding path further comprising only one band pass filter for passing only frequencies developed bv the first RF power source.

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