초록 ▼

The present invention provides systems, methods and apparatus for high temperature (at least about 500-800.degree. C.) processing of semiconductor wafers. The systems, methods and apparatus of the present invention allow multiple process steps to be performed in situ in the same chamber to reduce to

The present invention provides systems, methods and apparatus for high temperature (at least about 500-800.degree. C.) processing of semiconductor wafers. The systems, methods and apparatus of the present invention allow multiple process steps to be performed in situ in the same chamber to reduce total processing time and to ensure high quality processing for high aspect ratio devices. Performing multiple process steps in the same chamber also increases the control of the process parameters and reduces device damage. In particular, the present invention can provide high temperature deposition, heating and efficient cleaning for forming dielectric films having thickness uniformity, good gap fill capability, high density, low moisture, and other desired characteristics.

대표청구항 ▼

[ What is claimed is:] [1.] A process for depositing an insulating layer on a substrate having at least one gap, said substrate being disposed on a heater in a chamber, said process comprising the steps of:raising said heater to a temperature of at least about 500.degree. C.;pressurizing said chambe

[ What is claimed is:] [1.] A process for depositing an insulating layer on a substrate having at least one gap, said substrate being disposed on a heater in a chamber, said process comprising the steps of:raising said heater to a temperature of at least about 500.degree. C.;pressurizing said chamber to a pressure of between about 10 to about 760 torr; andintroducing oxygen and silicon which comprise TEOS and O.sub.3 into said chamber to deposit an oxide film on said substrate on said heater at said temperature filling said at least one gap.