초록 ▼

A hybrid focal plane array has Hg.sub.1-x Cd.sub.x Te junction photodiodes formed in a substrate of HgCdTe which is capped by a layer of Te-rich CdTe. Type conversion of a low metal vacancy HgCdTe substrate to p-type is performed by annealing the capped substrate at a temperature sufficient to suppo

A hybrid focal plane array has Hg.sub.1-x Cd.sub.x Te junction photodiodes formed in a substrate of HgCdTe which is capped by a layer of Te-rich CdTe. Type conversion of a low metal vacancy HgCdTe substrate to p-type is performed by annealing the capped substrate at a temperature sufficient to support interdiffusion between the Te-rich CdTe capping layer and the HgCdTe substrate. Use of the CdTe capping layer with a slight excess Te maintains the surface of the HgCdTe substrate in a Te-rich phase condition.

대표청구항 ▼

[ What is claimed is:] [1.] A semiconductor photodetector device comprising:a substrate made of a material having a first conductivity type, the substrate having an outer surface and being made of an alloy having the formula Hg.sub.1-x Cd.sub.x Te, where x is a positive number less than 1;the substr

[ What is claimed is:] [1.] A semiconductor photodetector device comprising:a substrate made of a material having a first conductivity type, the substrate having an outer surface and being made of an alloy having the formula Hg.sub.1-x Cd.sub.x Te, where x is a positive number less than 1;the substrate having a photo receptor region formed on its outer surface, the receptor region having a second conductivity type and forming a junction with the material of the first conductivity type; and,a capping layer disposed on the outer surface of the substrate and covering at least a major surface portion of the photo receptor region, the capping layer consisting essentially of Te-rich cadmium telluride.