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Semiconductor light emitting device with increased luminous power 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-033/00
출원번호 US-0165284 (1998-10-02)
우선권정보 JP-0060296 (1998-02-03)
발명자 / 주소
  • Isokawa Shinji,JPX
  • Toda Hidekazu,JPX
출원인 / 주소
  • Rohm Co., Ltd., JPX
대리인 / 주소
    Arent Fox Kintner Plotkin & Kahn, PLLC
인용정보 피인용 횟수 : 42  인용 특허 : 2

초록

In a chip-type light emitting device in which first and second terminal electrodes are formed on both ends of an insulating substrate with a light emitting device chip being mounted on the surface side, the LED chip is directly formed on the insulating substrate, and at least a portion of the insula

대표청구항

[ What is claimed is:] [1.] A chip-type semiconductor light emitting device comprising:an insulating substrate;first and second terminal electrodes that are placed at both ends of a surface of said insulating substrate, with at least a portion of said surface of said insulating substrate located bet

이 특허에 인용된 특허 (2)

  1. Anzaki Toshihiro (Kokubu JPX) Murano Shunji (Aira JPX), Array of light emitting devices or photo detectors with marker regions.
  2. Tsutsui Tsuyoshi,JPX, Light-emitting semiconductor device and method for manufacturing the same.

이 특허를 인용한 특허 (42)

  1. Andrews, Peter S.; Slater, Jr., David B., Cluster packaging of light emitting diodes.
  2. Negley, Gerald H.; Van De Ven, Antony Paul, Fault tolerant light emitters, systems incorporating fault tolerant light emitters and methods of fabricating fault tolerant light emitters.
  3. Sun, Xiao-Dong; Minnear, William P., Floating chip photonic device and method of manufacture.
  4. Wang, Tao, GaN structures having low dislocation density and methods of manufacture.
  5. Udagawa, Takashi, Group-III nitride semiconductor light-emitting device and production method thereof.
  6. Udagawa,Takashi, Group-III nitride semiconductor light-emitting device and production method thereof.
  7. Negley, Gerald H.; Van De Ven, Antony Paul, Illumination devices, and methods of fabricating same.
  8. Yamazaki,Katsuyuki; Sekiya,Toshiyuki; Shiraishi,Mitsuo; Ishikawa,Junji, Image exposure apparatus and image forming apparatus.
  9. Wang, Bily; Chuang, Jonnie; Chen, Chia-Hung, LED chip package structure using a ceramic material as a substrate and a method for manufacturing the same.
  10. Takahashi, Yuji; Kaga, Koichi; Kato, Hideaki; Ikeda, Tadaaki; Miyawaki, Michio, LED lamp.
  11. Song, Kyung Sub; Cheon, Jong Pil, Light emission diode package.
  12. Britt, Jeffrey C.; Emerson, David T.; Rosado, Raymond; Lydon, Justin, Light emitter devices and methods with reduced dimensions and improved light output.
  13. Hussell, Christopher P.; Lydon, Justin; Rosado, Raymond; Britt, Jeffrey C., Light emitter devices and methods, utilizing light emitting diodes (LEDs), for improved light extraction.
  14. Reiherzer, Jesse Colin, Light emitter devices having improved chemical and physical resistance and related methods.
  15. Reiherzer, Jesse Colin, Light emitter devices having improved light output and related methods.
  16. Jun, Eui Geun, Light emitting device module.
  17. Lin, Shaow; Sievert, James; Reiherzer, Jesse Colin; Rayfield, Barry; Hussell, Christopher P., Light emitting devices and components having improved chemical resistance and related methods.
  18. Fukasawa, Koichi; Miyashita, Junji; Tsuchiya, Kousuke, Light emitting diode.
  19. Ming-Te Lin TW, Light emitting diode.
  20. Tom Jory TW; Po-Hsien Lee TW; Chen-Lun Hsing Chen TW, Light emitting diode assembly with low thermal resistance.
  21. Slater, Jr.,David B.; Williams,Bradley E.; Andrews,Peter S.; Edmond,John A.; Allen,Scott T., Light emitting diodes including barrier layers/sublayers.
  22. Slater, Jr., David B.; Williams, Bradley E.; Andrews, Peter S.; Edmond, John A.; Allen, Scott T., Light emitting diodes including barrier layers/sublayers and manufacturing methods therefor.
  23. Slater, Jr., David B.; Williams, Bradley E.; Andrews, Peter S.; Edmond, John A.; Allen, Scott T., Light emitting diodes including barrier sublayers.
  24. Slater, Jr., David B.; Williams, Bradley E.; Andrews, Peter S.; Edmond, John A.; Allen, Scott T., Light emitting diodes including current spreading layer and barrier sublayers.
  25. Slater, Jr., David B.; Glass, Robert C.; Swoboda, Charles M.; Keller, Bernd; Ibbetson, James; Thibeault, Brian; Tarsa, Eric J., Light emitting diodes including modifications for light extraction.
  26. Slater, Jr., David B.; Williams, Bradley E.; Andrews, Peter S., Light emitting diodes including modifications for submount bonding.
  27. Slater, Jr., David B.; Glass, Robert C.; Swoboda, Charles M.; Keller, Bernd; Ibbetson, James; Thibeault, Brian; Tarsa, Eric J., Light emitting diodes including optically matched substrates.
  28. Slater, Jr.,David B.; Glass,Robert C.; Swoboda,Charles M.; Keller,Bernd; Ibbetson,James; Thibeault,Brian; Tarsa,Eric J., Light emitting diodes including pedestals.
  29. Slater, Jr.,David B.; Glass,Robert C.; Swoboda,Charles M.; Keller,Bernd; Ibbetson,James; Thibeault,Brian; Tarsa,Eric J., Light emitting diodes including transparent oxide layers.
  30. Slater, Jr., David B.; Glass, Robert C.; Swoboda, Charles M.; Keller, Bernd; Ibbetson, James; Thibeault, Brian; Tarsa, Eric J., Light emitting diodes including two reflector layers.
  31. Hamada, Tetsuya, Light emitting element, light emitting element array, backlight unit, and liquid crystal display.
  32. Atsuo Hirano JP; Yukio Yoshikawa JP; Kiyotaka Teshima JP; Takemasa Yasukawa JP, Light-emitting diode.
  33. Hirano, Atsuo; Yoshikawa, Yukio; Teshima, Kiyotaka; Yasukawa, Takemasa, Light-emitting diode.
  34. Murakami,Gen; Saito,Tetsuya; Otaka,Atsushi; Morikawa,Toshiaki; Abe,Tomoaki; Aoki,Dai, Light-emitting unit and method for producing same as well as lead frame used for producing light-emitting unit.
  35. Slater, Jr.,David B.; Williams,Bradley E.; Andrews,Peter S., Methods of fabricating light emitting devices using mesa regions and passivation layers.
  36. Slater, Jr., David B.; Williams, Bradley E.; Andrews, Peter S.; Edmond, John A.; Allen, Scott T., Methods of manufacturing light emitting diodes including barrier layers/sublayers.
  37. Wang,Billy; Chuang,Jonnie; Hung,Chi Wen; Lin,Chuan Fa, Package structure for semiconductor.
  38. Slater, Jr., David B.; Hagleitner, Helmut, Reflective ohmic contacts for silicon carbide including a layer consisting essentially of nickel, methods of fabricating same, and light emitting devices including the same.
  39. Isokawa,Shinji, Semiconductor device using semiconductor chip.
  40. Korony, Gheorghe, Shaped integrated passives.
  41. Ryu, Sei-Hyung; Agarwal, Anant K., Silicon carbide junction barrier Schottky diodes with suppressed minority carrier injection.
  42. Hasegawa, Tomohide; Izumi, Minako; Sasaki, Yasuhiro; Hamada, Noriaki; Okamura, Takuji; Motomura, Koichi, Wiring board for light-emitting element.
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