초록 ▼

An apparatus for enabling EEPROM functionality using a flash memory device comprises a number of bytes of non-volatile memory. The flash memory device has per-byte source isolation and per-byte drain isolation of a number of non-volatile flash memory cell transistors. The flash memory device provide

An apparatus for enabling EEPROM functionality using a flash memory device comprises a number of bytes of non-volatile memory. The flash memory device has per-byte source isolation and per-byte drain isolation of a number of non-volatile flash memory cell transistors. The flash memory device provides a byte-alterable non-volatile memory.

대표청구항 ▼

[ What is claimed is:] [1.] A memory device, comprising:a memory array, the memory array including:one or more blocks of memory cells, each memory cell within the one or more blocks includes a source and a drain, andwherein each block of memory cells includes,a source isolation device configured to

[ What is claimed is:] [1.] A memory device, comprising:a memory array, the memory array including:one or more blocks of memory cells, each memory cell within the one or more blocks includes a source and a drain, andwherein each block of memory cells includes,a source isolation device configured to isolate the source of each memory cell within the block from other blocks of memory cells, anda drain isolation device configured to isolate the drain of each memory cell within the block from other blocks of memory cells.