[특허]Semiconductor hetero-interface photodetector

[미국특허] Semiconductor hetero-interface photodetector 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	H01L-031/072 H01L-031/109 H01L-031/0328 H01L-031/0336
출원번호	US-0272426 (1999-03-19)
발명자 / 주소	Bowers John E. Hawkins Aaron R.
출원인 / 주소	The Regents of the University of California
대리인 / 주소	Gates & Cooper
인용정보	피인용 횟수 : 23 인용 특허 : 27

초록 ▼

By using wafer fusion, various structures for photodetectors and photodetectors integrated with other electronics can be achieved. The use of silicon as a multiplication region and III-V compounds as an absorption region create photodetectors that are highly efficient and tailored to specific applic

대표청구항 ▼

[ What is claimed is:] [1.] A resonant cavity photodetector, comprising:a first mirror on a substrate;an absorption layer with a first lattice constant coupled to the first mirror;a multiplication layer with a second lattice constant bonded to the absorption layer thereby to permit a current to effectively pass between the absorption layer and the multiplication layer, said first lattice constant being different than said second lattice constant; anda second mirror coupled to the multiplication layer.

이 특허에 인용된 특허 (27) 인용/피인용 타임라인 분석

Kobayashi Masahiro (Inagi JPX) Yamazaki Susumu (Hadano JPX) Mikawa Takashi (Tokyo JPX) Nakajima Kazuo (Kawasaki JPX) Kaneda Takao (Kawasaki JPX), Avalanche multiplication photodiode having a buried structure.
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Brennan Kevin F. (Atlanta GA), Avalanche photodetector.
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Yoo Ji-Beom (Daejeon KRX) Park Chan-Yong (Daejeon KRX) Kim Hong-Man (Daejeon KRX), Avalanche photodiode having a multiplication layer with superlattice.
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Quenzer Hans J. (Berlin DEX) Benecke Wolfgang (Vorwerk-Buchholz DEX), Direct substrate bonding.
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Dell John M. (Blackurn South AUX) Yoffe Gideon W. (Eindhoven NLX), Electro-optic device.
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Tabatabaie Nader (Red Bank NJ), Fabrication method for modified planar semiconductor structures.
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Kurtz Anthony D. (Teaneck NJ) Ned Alexander A. (Bloomingdale NJ), Fusion bonding technique for use in fabricating semiconductor devices.
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Terranova Nancy (Wilmington DE) Barnett Allen M. (Newark DE), Hetero-epitaxial growth of non-lattice matched semiconductors.
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Koch Thomas L. (Holmdel NJ) Kogelnik Herwig (Rumson NJ) Koren Uziel (Fair Haven NJ), Inline diplex lightwave transceiver.
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Kasahara Kenichi (Tokyo JPX) Sugou Shigeo (Tokyo JPX), Method for fabricating semiconductor laser and photo detecting arrays for wavelength division multiplexing optical inter.
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Goossen Keith W. (Aberdeen NJ), Method for manufacturing integrated semiconductor devices.
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Grupen-Shemansky Melissa E. (Phoenix AZ) Cambou Bertrand F. (Mesa AZ), Method of bonding silicon and III-V semiconductor materials.
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Takahashi Shigeki (Kawasaki JPX) Shiraki Yasuhiro (Tokyo JPX), Method of forming a pattern in semiconductor device manufacturing process.
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Forrest Stephen R. (Torrance CA), Method of making avalanche photodiode.
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Furuyama Hideto (Tokyo JPX) Sadamasa Tetsuo (Chigasaki JPX), Method of manufacturing a semiconductor light detector.
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Matsushima Yuichi (Tokorozawa JPX) Sakai Kazuo (Tokyo JPX) Akiba Shigeyuki (Tokyo JPX), Method of manufacturing avalanche photo diode.
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Liu Hui Chun (1400 Turner Crescent Orleans Ontario CAX K1E 2Y4 ), Multicolor voltage tunable quantum well intersubband infrared photodetector.
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Maruska H. Paul (Acton MA), Optical heterodyne receiver for fiber optic communications system.
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Duboz Jean-Yves,FRX, Optoelectronic quantum well device having an optical resonant cavity and sustaining inter subband transitions.
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Sands Timothy D. (Cranbury NJ), Palladium welding of a semiconductor body.
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Hunt Neil E. J. (Scotch Plains NJ) Schubert Erdmann F. (New Providence NJ) Zydzik George J. (Columbia NJ), Photodetector with a resonant cavity.
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Bryan Robert P. (Boulder CO) Olbright Gregory R. (Boulder CO) Brennan Thomas M. (Albuquerque NM) Tsao Jeffrey Y. (Albuquerque NM), Photodetector with absorbing region having resonant periodic absorption between reflectors.
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Unlu M. Selim ; Onat Bora, Polarization sensitive photodetectors and detector arrays.
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Shaffer John W. (Williamsport PA) Sindlinger Ronald E. (Muncy PA), Primer insulating base.
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Biallas Vesna (Ruetlingen DEX) Goebel Herbert (Ruetlingen DEX) Spitz Richard (Ruetlingen DEX), Process for manufacturing semiconductor components.
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Bethea Clyde G. (943 Hillside Ave. Plainfield NJ 07062) Hasnain Ghulam (14 Daphne Ct. Edison NJ 08820) Levine Barry F. (22 Bear Brook La. Livingston NJ 07039) Malik Roger J. (23 Ridgedale Ave. Summit, Quantum-well radiation-interactive device, and methods of radiation detection and modulation.
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Cunningham John E. (Lincroft NJ) Goossen Keith W. (Aberdeen NJ), Surface-normal semiconductor optical cavity devices.
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이 특허를 인용한 특허 (23) 인용/피인용 타임라인 분석

Yuan, Ping; Boisvert, Joseph C.; Krut, Dmitri D.; Sudharsanan, Rengarajan, Avalanche photodiode detector.
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Yuan, Ping; Boisvert, Joseph C.; Krut, Dmitri D.; Sudharsanan, Rengarajan, Avalanche photodiode detector.
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Morse, Michael T.; Dosunmu, Olufemi I.; Liu, Ansheng; Paniccia, Mario J., Germanium/silicon avalanche photodetector with separate absorption and multiplication regions.
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Morse, Michael T.; Dosunmu, Olufemi I.; Liu, Ansheng; Paniccia, Mario J., Germanium/silicon avalanche photodetector with separate absorption and multiplication regions.
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Pauchard, Alexandre; Lo, Yu-Hwa, Hetero-interface avalance photodetector.
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Aaron Eugene Bond, High speed semiconductor photodetector.
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Bowers, John E., Hybrid silicon evanescent photodetectors.
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Bowers, John E., Hybrid silicon optoelectronic device and method of formation.
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Bowers, John E., III-V photonic integration on silicon.
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Bowers, John E., III-V photonic integration on silicon.
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Bowers, John E., III-V photonic integration on silicon.
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Bowers, John Edward, III-V photonic integration on silicon.
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Pauchard, Alexandre; Morse, Michael T., Inverted planar avalanche photodiode.
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Bowers, John E.; Cohen, Oded; Fang, Alexander W.; Jones, Richard; Paniccia, Mario J.; Park, Hyundai, Method for electrically pumped semiconductor evanescent laser.
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Cheng, Szu-Lin; Liu, Han-Din; Chen, Shu-Lu; Na, Yun-Chung; Chen, Hui-Wen, Multi-wafer based light absorption apparatus and applications thereof.
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Cheng, Szu-Lin; Liu, Han-Din; Chen, Shu-Lu; Na, Yun-Chung; Chen, Hui-Wen, Multi-wafer based light absorption apparatus and applications thereof.
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Seo,Jun Ho; Jang,Jong Ho, Nitride semiconductor light emitting diode and fabrication method thereof.
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Janz Siegfried,CAX ; Lafontaine Hughes,CAX ; Xu Dan-Xia,CAX, Phototonic device with strain-induced three dimensional growth morphology.
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Alexandre Pauchard ; Yu-Hwa Lo, Planar hetero-interface photodetector.
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Lester J. Kozlowski ; Gerard J. Sullivan ; Roger E. Dewames ; Brian T. McDermott, Room temperature, low-light-level visible imager.
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Sarid, Gadi; Kang, Yimin; Pauchard, Alexandre, Semi-planar avalanche photodiode.
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Stephen O'Brien ; Lars E. Eng ; Robert L. Hartman, Semiconductor etalon device, optical control system and method.
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John E. Bowers ; Aaron R. Hawkins, Semiconductor hetero-interface photodetector.
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[미국특허] Semiconductor hetero-interface photodetector 원문보기