초록 ▼

A method of making a semiconductor integrated circuit interconnection structure includes forming an active electronic element in a semiconductor substrate; forming a first electrically insulating layer on the electronic element and the semiconductor substrate; forming a first electrically conducting

A method of making a semiconductor integrated circuit interconnection structure includes forming an active electronic element in a semiconductor substrate; forming a first electrically insulating layer on the electronic element and the semiconductor substrate; forming a first electrically conducting interconnection layer electrically connected to the electronic element, at least partially disposed on the first electrically insulating layer, and including at least one opening extending to the first electrically insulating layer; forming a second electrically insulating layer on the first electrically conducting interconnection layer and filling the opening, thereby forming a barrier to the flow of current in a region of the first electrically conducting interconnection layer; forming a throughhole extending through the second electrically insulating layer to the first electrically conducting interconnection layer proximate the opening; and depositing a second electrically conducting interconnection layer on the second electrically insulating layer and in the through-hole, electrically contacting the first electrically conducting interconnection layer.

대표청구항 ▼

[ We claim:] [1.] A semiconductor integrated circuit structure comprising:a semiconductor substrate;an electronic element disposed in the substrate;a first electrically insulating layer disposed on the substrate and the electronic element;a first electrically conducting interconnection layer electri

[ We claim:] [1.] A semiconductor integrated circuit structure comprising:a semiconductor substrate;an electronic element disposed in the substrate;a first electrically insulating layer disposed on the substrate and the electronic element;a first electrically conducting interconnection layer electrically connected to the electronic element and disposed at least partly on the first electrically insulating layer;a second electrically insulating layer disposed on the first electrically conducting interconnection layer;a second electrically conducting interconnection layer disposed on the second electrically insulating layer; anda through-hole penetrating through the second electrically insulating layer to the first electrically conducting interconnection layer, part of the second electrically conducting interconnection layer being disposed within the through-hole and contacting the first electrically conducting interconnection layer whereinthe first electrically conducting interconnection layer includes a first current barrier comprising at least one opening in the first electrically conducting interconnection layer, proximate the through-hole, extending through the first electrically conducting interconnection layer to the first electrically insulating layer, and filled with part of the second electrically insulating layer, the first current barrier in the first electrically conducting interconnection layer constraining current flowing between the first and second electrically conducting interconnection layers to flow around the first current barrier, andthe second electrically conducting interconnection layer includes a second current barrier comprising at least one opening in the second electrically conducting interconnection layer, proximate the through-hole, extending through the second electrically conducting interconnection layer to the second electrically insulating layer, and filled with an electrically insulating material, the second current barrier in the second electrically conducting interconnection layer constraining current flowing between the first and second electrically conducting interconnection layers to flow around the second current barrier.