초록 ▼

A structure and method for connecting two levels of interconnect vertically spaced from each other by another level of interconnect by forming a first interconnect region to which contact is to be made, a first insulating layer over the interconnect region, and an etch-stop layer over the first insu

A structure and method for connecting two levels of interconnect vertically spaced from each other by another level of interconnect by forming a first interconnect region to which contact is to be made, a first insulating layer over the interconnect region, and an etch-stop layer over the first insulating layer, and etching the etch stop layer to form an opening at a position over the first interconnect region. A second interconnect region is formed in contact with the first insulating layer and above the first interconnect region, a second insulating layer is formed over the first insulation layer and the etch stop layer, and an opening is formed in the second insulating layer overlapping the opening in the etch stop layer. The opening in the second insulating layer is extended through the first insulating layer and the openings in the first and second insulating layers are filled with a conductor to create a connection between the first interconnect region and a region above the second insulating layer.

대표청구항 ▼

[ Thus, having described the invention, what is claimed is:] [1.] A method for connecting two levels of interconnect vertically spaced from each other by another level of interconnect comprising the steps of:a) forming a first interconnect region to which contact is to be made;b) forming a first ins

[ Thus, having described the invention, what is claimed is:] [1.] A method for connecting two levels of interconnect vertically spaced from each other by another level of interconnect comprising the steps of:a) forming a first interconnect region to which contact is to be made;b) forming a first insulating layer over the interconnect region;c) forming an etch-stop layer over the first insulating layer;d) etching the etch stop layer to form an opening at a position over said first interconnect region;e) forming a second interconnect region in contact with said first insulating layer and above said first interconnect region;f) forming a second insulating layer over said first insulation layer, said etch stop layer, and the etch stop layer opening;g) forming an opening in said second insulating layer, said opening in said second insulating layer overlapping said opening in said etch stop layer;h) extending said opening in said second insulating layer through said opening in said etch stop layer and said first insulating layer; andi) filling the openings in said first and second insulating layers with a conductor to create a connection between said first interconnect region and a region above said second insulating layer, the portion of the conductor in said first insulating layer being filled to conform to the opening in said etch stop layer.