초록 ▼

An integrated circuit device (10) with a bonding surface (12) directly over its active circuitry, and a method of making such integrated circuits (FIGS. 2A 2E). To make the bonding surface (12), a wafer (20) is provided with vias (24) to its metallization layer (21) and then coated with a seed metal

An integrated circuit device (10) with a bonding surface (12) directly over its active circuitry, and a method of making such integrated circuits (FIGS. 2A 2E). To make the bonding surface (12), a wafer (20) is provided with vias (24) to its metallization layer (21) and then coated with a seed metal layer (25). A plating pattern (26) is formed on the wafer (20), exposing portions of the seed metal layer (25) and blocking the rest of the seed metal layer (25). These exposed portions are plated with successive metal layers (27, 28, 29), thereby forming a bonding surface (12) having a number of layered stacks (200) that fill the vias (24). The plating pattern and the nonplated portions of the seed metal layer (25) are then removed.

대표청구항 ▼

[ What is claimed is:] [1.] An integrated circuit device, comprising:a silicon substrate;an active circuit fabricated in said substrate comprised of electrical components;a metallization layer formed over said active circuit; andan electrically conductive bonding surface positioned directly over sai

[ What is claimed is:] [1.] An integrated circuit device, comprising:a silicon substrate;an active circuit fabricated in said substrate comprised of electrical components;a metallization layer formed over said active circuit; andan electrically conductive bonding surface positioned directly over said active circuit, said bonding surface having connector stacks that fill vias to said metallization layer, each of said stacks being comprised of a stack of the following electrically conductive layers in succession: a seed metal layer in contact with said metallization layer, a metal support layer in contact with said seed metal layer, and at least one metal wire bonding layer in contact with said metal support layer.