초록 ▼

A linear polishing belt for use in chemical-mechanical polishing (CMP) of a substrate comprises an opening and a flexible monitoring window secured to the belt to close the opening and to create a monitoring channel in the belt. A plurality of monitoring channels can also be used. A film thickness m

A linear polishing belt for use in chemical-mechanical polishing (CMP) of a substrate comprises an opening and a flexible monitoring window secured to the belt to close the opening and to create a monitoring channel in the belt. A plurality of monitoring channels can also be used. A film thickness monitor comprising an interferometer can be disposed alongside the belt or at least partially within a region bound by it. The monitoring channel and the film thickness monitor can be used in the CMP process to determine the end point of the CMP process, determine removal rate at any given circumference of a substrate, determine average removal rate across a substrate surface, determine removal rate variation across a substrate surface, and optimize removal rate and uniformity.

대표청구항 ▼

[ What is claimed is:] [33.] A method for determining average removal rate per belt revolution across a substrate surface while performing a chemical-mechanical polishing process using a linear polishing belt, the method comprising the steps of:(a) providing a belt having a first and second opening

[ What is claimed is:] [33.] A method for determining average removal rate per belt revolution across a substrate surface while performing a chemical-mechanical polishing process using a linear polishing belt, the method comprising the steps of:(a) providing a belt having a first and second opening formed therein and a first and second monitoring window secured to the belt to close the respective first and second openings and to create a respective first and second monitoring channel in the belt, the first and second monitoring windows each comprising a flexible material adapted to flex with the belt as the belt moves in use;(b) measuring a first film thickness of a substrate with an interferometer during a chemical-mechanical polishing process when the first monitoring channel in the belt aligns with a first film thickness monitor; and then(c) measuring a second film thickness of the substrate with the interferometer during the chemical-mechanical polishing process when the first monitoring channel in the belt realigns with the first film thickness monitor; and then(d) measuring a third film thickness of the substrate with the interferometer during the chemical-mechanical polishing process when the second monitoring channel in the belt aligns with a second film thickness monitor; and then(e) measuring a fourth film thickness of the substrate with the interferometer during the chemical-mechanical polishing process when the second monitoring channel in the belt realigns with the second film thickness monitor; and then(f) calculating a difference between the second film thickness of step (c) and the first film thickness of step (b); and(g) calculating a difference between the fourth film thickness of step (e) and the third film thickness of step (d); and then(h) calculating an average of the differences of steps (f) and (g).