초록 ▼

A dual damascene method of fabricating an interconnection level of conductive lines and connecting vias etches a via opening in a first insulating layer. A photoresist layer that the defines the conductive wiring is deposited and patterned on the first insulating layer after the via opening has been

A dual damascene method of fabricating an interconnection level of conductive lines and connecting vias etches a via opening in a first insulating layer. A photoresist layer that the defines the conductive wiring is deposited and patterned on the first insulating layer after the via opening has been created. The via opening and the conductive wire opening in the resist layer are then filled with the conductive material, such as copper. The resist layer may then be removed and a second insulating layer provided over the first insulating layer.

대표청구항 ▼

[ What is claimed is:] [1.] A method of forming a layered conductive structure in a semiconductor device, comprising the steps of:forming an opening in a first insulating layer consisting of a self-copper diffusion barrier material;depositing a seed layer on the first insulating layer;patterning a r

[ What is claimed is:] [1.] A method of forming a layered conductive structure in a semiconductor device, comprising the steps of:forming an opening in a first insulating layer consisting of a self-copper diffusion barrier material;depositing a seed layer on the first insulating layer;patterning a resist layer on the seed layer to define a space in the resist layer that is located over the opening;simultaneously filling the opening in the first insulating layer and the space in the resist layer with copper to form the layered conductive structure;removing the resist layer; anddepositing a second insulating layer on the first insulating layer and around the layered conductive structure.