초록 ▼

Light-emitting device with excellent emission intensity is difficult to obtain when gallium indium nitride with high indium composition ratio and poor crystallinity is employed as active layer for group-III nitride light-emitting device to emit a comparatively long wavelength light. The invention pr

Light-emitting device with excellent emission intensity is difficult to obtain when gallium indium nitride with high indium composition ratio and poor crystallinity is employed as active layer for group-III nitride light-emitting device to emit a comparatively long wavelength light. The invention provides a light-emitting layer on a super lattice structure as a base layer, and crystallinity of the light-emitting layer is then improved. Furthermore, abruptness of a crystal composition at an interface of the light-emitting layer and an upper junction layer is achieved, thus forming a bending portion of a band structure expedient for allowing the emitting-layer to emit a light with a long wavelength.

대표청구항 ▼

[ What is claimed is:] [1.] A group-III nitride semiconductor light-emitting device which takes a pn-junction type double hetero (DH) junction structure which comprises an n-type cladding layer and a p-type cladding layer formed on one surface of a single crystal substrate, and a light-emitting laye

[ What is claimed is:] [1.] A group-III nitride semiconductor light-emitting device which takes a pn-junction type double hetero (DH) junction structure which comprises an n-type cladding layer and a p-type cladding layer formed on one surface of a single crystal substrate, and a light-emitting layer made of a group-III nitride semiconductor crystal layer provided between the n and p-type cladding layers, wherein the light-emitting layer includes a super lattice structure in which n-type group-III nitride semiconductor crystal layers disposed closer to the n-type cladding layer are alternately stacked repeatingly, the n-type group-III nitride semiconductor crystal layers having different composition ratios of a group-III constituent element and approximately the same thickness and the stacking cycle number ranging from two pairs to twenty five pairs; and an active layer made of an n-type group-III nitride semiconductor crystal layer provided on a layer as an upper end layer which is located at an end of the super lattice structure closer to the p-type cladding layer, the n-type group-III nitride semiconductor crystal layer having a non-rectangular potential structure due to a bend of a band.