초록 ▼

A method and structure for forming a damascene structure with reduced capacitance by forming one or more of: the passivation layer, the etch stop layer, and the cap layer using a low dielectric constant material comprising carbon nitride, boron nitride, or boron carbon nitride. The method begins by

A method and structure for forming a damascene structure with reduced capacitance by forming one or more of: the passivation layer, the etch stop layer, and the cap layer using a low dielectric constant material comprising carbon nitride, boron nitride, or boron carbon nitride. The method begins by providing a semiconductor structure having a first conductive layer thereover. A passivation layer is formed on the first conductive layer. A first dielectric layer is formed over the passivation layer, and an etch stop layer is formed over the first dielectric layer. A second dielectric layer is formed over the etch stop layer, and an optional cap layer can be formed over the second dielectric layer. The cap layer, the second dielectric layer, the etch stop layer, and the first dielectric layer are patterned to form a via opening stopping on said passivation layer and a trench opening stopping on the first conductive layer. A carbon nitride passivation layer, etch stop layer, or cap layer can be formed by magnetron sputtering from a graphite target in a nitrogen atmosphere. A boron nitride passivation layer, etch stop layer, or cap layer can be formed by PECVD using B.sub.2 H.sub.6, ammonia, and nitrogen. A boron carbon nitride passivatation layer, etch stop layer, or cap layer can be formed by magnetron sputtering from a graphite target in a nitrogen and B.sub.2 H.sub.6 atmosphere.

대표청구항 ▼

[ What is claimed is:] [1.] A method of forming a damascene structure using a low dielectric constant passivation layer or etch stop layer, comprising the steps of:a. providing a semiconductor structure having a first conductive layer thereover;b. forming a passivation layer on said first conductive

[ What is claimed is:] [1.] A method of forming a damascene structure using a low dielectric constant passivation layer or etch stop layer, comprising the steps of:a. providing a semiconductor structure having a first conductive layer thereover;b. forming a passivation layer on said first conductive layer;c. forming a first dielectric layer over said passivation layer;d. forming an etch stop layer over said first dielectric layer;e. forming a second dielectric layer over said etch stop layer; andf. patterning said second dielectric layer, said etch stop layer, and said first dielectric layer to form a via opening stopping on said passivation layer and a trench opening stopping on said etch stop layer;wherein said passivation layer, said etch stop layer, or said passivation layer and said etch stop layer comprise carbon nitride, boron nitride, or boron carbon nitride.