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Electroless metal deposition of electronic components in an enclosable vessel 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/31
  • B05D-001/18
  • B05D-003/10
출원번호 US-0395398 (1999-09-14)
발명자 / 주소
  • McConnell Christopher F.
  • Verhaverbeke Steven
출원인 / 주소
  • CFMT, Inc.
대리인 / 주소
    Woodcock Washburn Kurtz Mackiewicz & Norris LLP
인용정보 피인용 횟수 : 176  인용 특허 : 32

초록

The present invention provides methods of electrolessly depositing metal onto the surfaces of electronic components using an enclosable single vessel. The methods of the present invention include contacting the electronic components with an activation solution followed by contacting the electronic c

대표청구항

[ What is claimed is:] [1.] A method of electrolessly depositing a metal onto an electronic component comprising:(a) loading a plurality of electronic components in an enclosable single vessel;(b) forming an activation solution comprising at least one seeding agent, wherein the activation solution i

이 특허에 인용된 특허 (32)

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  26. Morishita Shinya (Aichi JPX), Photo-plating solution and process.
  27. McConnell Christopher F. (West Chester PA) Walter Alan E. (Exton PA), Process and apparatus for drying surfaces.
  28. McConnell Christopher F. (Gulph Mills PA) Walter Alan E. (Exton PA), Process and apparatus for treating wafers with process fluids.
  29. Baum Thomas H. (San Jose CA) Houle Frances A. (Fremont CA) Jones Carol R. (San Jose CA) Kovac Caroline A. (Ridgefield CT), Selective deposition of copper.
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  125. Dhau, Jaspreet Singh; Sharma, Sunity K., Reduced porosity copper deposition.
  126. Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K., Remotely-excited fluorine and water vapor etch.
  127. Xu, Lin; Chen, Zhijun; Huang, Jiayin; Wang, Anchuan, Removal methods for high aspect ratio structures.
  128. Xu, Lin; Chen, Zhijun; Huang, Jiayin; Wang, Anchuan, Removal methods for high aspect ratio structures.
  129. Weidman,Timothy W., Ruthenium containing layer deposition method.
  130. Yang, Dongqing; Zhu, Lala; Wang, Fei; Ingle, Nitin K., Saving ion-damaged spacers.
  131. Chen, Zhijun; Huang, Jiayin; Wang, Anchuan; Ingle, Nitin, Selective SiN lateral recess.
  132. Wang, Xikun; Lei, Jianxin; Ingle, Nitin; Shaviv, Roey, Selective cobalt removal for bottom up gapfill.
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  137. Wang, Anchuan; Zhang, Jingchun; Ingle, Nitin K.; Lee, Young S., Selective etch of silicon by way of metastable hydrogen termination.
  138. Wang, Anchuan; Zhang, Jingchun; Ingle, Nitin K.; Lee, Young S., Selective etch of silicon by way of metastable hydrogen termination.
  139. Chen, Zhijun; Li, Zihui; Wang, Anchuan; Ingle, Nitin K.; Venkataraman, Shankar, Selective etch of silicon nitride.
  140. Chen, Zhijun; Li, Zihui; Wang, Anchuan; Ingle, Nitin K.; Venkataraman, Shankar, Selective etch of silicon nitride.
  141. Citla, Bhargav; Ying, Chentsau; Nemani, Srinivas; Babayan, Viachslav; Stowell, Michael, Selective etch using material modification and RF pulsing.
  142. Wang, Xikun; Ingle, Nitin, Selective in situ cobalt residue removal.
  143. Hoinkis, Mark; Miyazoe, Hiroyuki; Joseph, Eric, Selective sputtering for pattern transfer.
  144. Wang, Yunyu; Wang, Anchuan; Zhang, Jingchun; Ingle, Nitin K.; Lee, Young S., Selective suppression of dry-etch rate of materials containing both silicon and nitrogen.
  145. Wang, Yunyu; Wang, Anchuan; Zhang, Jingchun; Ingle, Nitin K.; Lee, Young S., Selective suppression of dry-etch rate of materials containing both silicon and oxygen.
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  158. Park, Seung; Wang, Anchuan, Silicon etch process with tunable selectivity to SiO2 and other materials.
  159. Korolik, Mikhail; Ingle, Nitin K.; Wang, Anchuan; Xu, Jingjing, Silicon germanium processing.
  160. Chen, Zhijun; Wang, Anchuan; Ingle, Nitin K., Silicon oxide selective removal.
  161. Huang, Jiayin; Chen, Zhijun; Wang, Anchuan; Ingle, Nitin, Silicon pretreatment for nitride removal.
  162. Li, Zihui; Hsu, Ching-Mei; Zhang, Hanshen; Zhang, Jingchun, Silicon selective removal.
  163. Chen, Zhijun; Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K., Silicon-carbon-nitride selective etch.
  164. Lopatin,Sergey D.; Shanmugasundrum,Arulkumar; Shacham Diamand,Yosef, Silver under-layers for electroless cobalt alloys.
  165. Kim, Hun Sang; Choi, Jinhan; Koseki, Shinichi, Simplified litho-etch-litho-etch process.
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  172. Christenson,Kurt Karl; Lee,Nam Pyo; Michalko,Gary William; Rathman,Christina Ann, Transition flow treatment process and apparatus.
  173. Liu, Jie; Wang, Xikun; Park, Seung; Korolik, Mikhail; Wang, Anchuan; Ingle, Nitin K., Tungsten oxide processing.
  174. Wang, Xikun; Liu, Jie; Wang, Anchuan; Ingle, Nitin K., Tungsten separation.
  175. Wang, Xikun; Wang, Anchuan; Ingle, Nitin K., V trench dry etch.
  176. Liu, Jie; Purayath, Vinod R.; Wang, Xikun; Wang, Anchuan; Ingle, Nitin K., Vertical gate separation.
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