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Backside illuminated image sensor 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-027/146
  • H01L-031/023
출원번호 US-0441766 (1999-11-17)
발명자 / 주소
  • Malinovich Yacov,ILX
  • Koltin Ephie,ILX
출원인 / 주소
  • Tower Semiconductor Ltd., ILX
대리인 / 주소
    Bever, Hoffman & Harms, LLPBever
인용정보 피인용 횟수 : 163  인용 특허 : 6

초록

A method for producing a back-illuminated CMOS image sensor including a matrix of pixels (e.g., CMOS APS cells) that are fabricated on a semiconductor substrate. The semiconductor substrate is secured to a protective substrate by an adhesive such that the processed (frontside) surface of the semicon

대표청구항

[ What is claimed is:] [1.] A backside illuminated image sensor comprising:a semiconductor substrate having a first surface and a second surface;a plurality of light-sensitive pixel regions formed on the first surface of the semiconductor substrate and including a photodiode diffusion region extendi

이 특허에 인용된 특허 (6)

  1. Tanabe Akihito (Tokyo JPX) Tohyama Shigeru (Tokyo JPX), Back-illuminated type photoelectric conversion device.
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  5. Nishizawa, Jun-ichi; Ohmi, Tadahiro, Semiconductor image sensors.
  6. Poole Richard R. (Norwalk CT) Garcia Enrique (Sandy Hook CT), Two-sided solid-state imaging device.

이 특허를 인용한 특허 (163)

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