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Deposition of copper with increased adhesion 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • B05D-003/06
  • C23C-016/00
출원번호 US-0030555 (1998-02-25)
발명자 / 주소
  • Zheng Bo
  • Chen Ling
  • Mak Alfred
  • Chang Mei
출원인 / 주소
  • Applied Materials, Inc.
대리인 / 주소
    Thomason, Moser & Patterson
인용정보 피인용 횟수 : 208  인용 특허 : 16

초록

A method and apparatus for improving the adhesion of a copper layer to an underlying layer on a wafer. The layer of copper is formed over a layer of material on a wafer and the copper layer impacted with ions to improve its adhesion to the underlying layer.

대표청구항 ▼

[ What is claimed is:] [1.] A method of processing a substrate comprising the steps of:(a) chemical vapor depositing a seed layer consisting essentially of copper upon said substrate; and(b) after said step (a), treating the copper seed layer through ion bombardment to cause the copper seed layer to

이 특허에 인용된 특허 (16)

  1. Terfloth Christian (Slzgrtel 96 D-5000 Koln 41 DEX) Kruck Thomas (Am Wachberg 9 D-5024 Erftstadt-Bliesheim DEX), Compound for depositing copper layers.
    상세보기
  2. Okamoto Shigeru,JPX, Embedded electroconductive layer and method for formation thereof.
    상세보기
  3. Allen Gregory Lee (Vancouver WA), Implantation of nucleating species for selective metallization and products thereof.
    상세보기
  4. Baum Thomas H. (San Jose CA) Larson Carl E. (San Jose CA) Reynolds Scott K. (Yorktown Heights NY), Ligand stabilized +1 metal beta-diketonate coordination complexes and their use in chemical vapor deposition of metal th.
    상세보기
  5. Gaerttner Martin R. (Dearborn MI) Hoffman David W. (Ann Arbor MI), Metallization process.
    상세보기
  6. Matsuo Mie (Yokohama JPX) Okano Haruo (Tokyo JPX) Hayasaka Nobuo (Yokosuka JPX) Suguro Kyoichi (Yokohama JPX) Miyajima Hideshi (Tokyo JPX) Wada Jun-ichi (Yokohama JPX), Method for forming an electrode and/or wiring layer by reducing copper oxide or silver oxide.
    상세보기
  7. Grtner Georg F. (Aachen DEX) Janiel Peter A. (Wrselen DEX) Lydtin Hans-Jrgen (Stolberg DEX), Method for the plasma-activated reactive deposition of electrically conductive multicomponent material from a gas phase.
    상세보기
  8. Watkins James J. ; McCarthy Thomas J., Method of chemically depositing material onto a substrate.
    상세보기
  9. Kajita Akihiro,JPX ; Kaneko Hisashi,JPX, Method of manufacturing semiconductor device.
    상세보기
  10. Kamigaito Osami (Aichi JPX) Noda Shoji (Aichi JPX) Doi Haruo (Aichi JPX), Method of producing a composite ceramic body.
    상세보기
  11. Sandhu Gurtej S. (Boise ID), Method of reducing carbon incorporation into films produced by chemical vapor deposition involving organic precursor com.
    상세보기
  12. Sandhu Gurtej S., Method of reducing carbon incorporation into films produced by chemical vapor deposition involving organic precursor compounds.
    상세보기
  13. Sandhu Gurtej S. (Boise ID), Method of reducing carbon incorporation into films produced by chemical vapor deposition involving organometallic precur.
    상세보기
  14. Tobe Ryoki,JPX ; Sasaki Masao,JPX ; Sekiguchi Atsushi,JPX ; Takagi Ken-ichi,JPX, Plasma enhanced CVD apparatus and process, and dry etching apparatus and process.
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  15. Hamerich Andreas (Elmshorn DEX) Mueller Joerg (Buchholz DEX) Doellein Guenther (Hanover DEX) Lottermoser Lars (Klein Meckelsen DEX), Process for depositing layers having high specific electrical conductivity.
    상세보기
  16. Norman John A. T. (Encinitas CA) Hochberg Arthur K. (Solana Beach CA) Roberts David A. (Escondido CA), Process for improved quality of CVD copper films.
    상세보기

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