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Method and apparatus for heat-treating an SOI substrate and method of preparing an SOI substrate by using the same 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/26
  • H01L-021/324
  • H01L-021/726
출원번호 US-0218416 (1998-12-22)
우선권정보 JP0361571 (1997-12-26)
발명자 / 주소
  • Sato Nobuhiko,JPX
출원인 / 주소
  • Canon Kabushiki Kaisha, JPX
대리인 / 주소
    Fitzpatrick, Cella, Harper & Scinto
인용정보 피인용 횟수 : 76  인용 특허 : 6

초록 ▼

An SOI substrate having on the surface thereof a single crystal silicon film formed on an insulator is heat-treated in a hydrogen-containing reducing atmosphere in order to smooth the surface and reduce the boron concentration without damaging the film thickness uniformity in a single wafer and amon

대표청구항 ▼

[ What is claimed is:] [1.] A method for heat-treating an SOI substrate having a silicon surface comprising a step of:heat-treating said SOI substrate in a hydrogen-containing reducing atmosphere, with keeping said SOI substrate in a state disposed opposite to a planar surface comprising a material

이 특허에 인용된 특허 (6)

  1. Ichikawa Takeshi (Hachioji JPX), Method for controlling roughness on surface of monocrystal.
    상세보기
  2. Tomozane Mamoru (Scottsdale AZ) Liaw H. Ming (Scottsdale AZ), Method of forming a SIMOX structure.
    상세보기
  3. Sato Nobuhiko,JPX ; Yonehara Takao,JPX ; Sakaguchi Kiyofumi,JPX, Process for producing semiconductor substrate by heating to flatten an unpolished surface.
    상세보기
  4. Bruel Michel (Veurey FRX), Process for the production of thin semiconductor material films.
    상세보기
  5. Yonehara Takao (Atsugi JPX), Semiconductor member and process for preparing semiconductor member.
    상세보기
  6. Yamaga Kenichi (Sagamihara JPX) Mikata Yuichi (Kawasaki JPX) Yamamoto Akihito (Kanagawa JPX), Thermal processing method and apparatus therefor.
    상세보기

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  1. Young-jin Song KR; Seung-ho Nam KR, Apparatus and method for forming aperture of vertical cavity surface emitting laser by selective oxidation.
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  2. Burns,Steven M.; Hahn,Steven P., Clean atmosphere heat treat for coated turbine components.
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  3. Henley, Francois J.; Cheung, Nathan W., Controlled process and resulting device.
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  4. Henley, Francois J.; Cheung, Nathan W., Controlled process and resulting device.
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  5. Ravi, Kramadhati V., Double gate field effect transistor with diamond film.
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  6. Zehavi, Raanan Y.; Boyle, James E.; Delaney, Laurence D., High temperature hydrogen anneal of silicon wafers supported on a silicon fixture.
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  7. Yagi, Shinichiro, Inspection device for crystal defect of silicon wafer and method for detecting crystal defect of the same.
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  8. Disney, Donald R.; Williams, Richard K., Isolated CMOS transistors.
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  9. Williams, Richard K.; Disney, Donald Ray; Chan, Wai Tien, Isolated drain-centric lateral MOSFET.
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  10. Williams, Richard K.; Disney, Donald Ray; Chan, Wai Tien, Isolated junction field-effect transistor.
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  11. Williams, Richard K.; Disney, Donald Ray; Chan, Wai Tien, Isolated lateral MOSFET in epi-less substrate.
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  12. Disney, Donald R.; Williams, Richard K., Isolated transistor.
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  13. Disney, Donald R.; Williams, Richard K., Isolated transistor.
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  14. Chan, Wai Tien; Disney, Donald Ray; Williams, Richard Kent, Isolation structures for semiconductor devices.
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  15. Chan, Wai Tien; Disney, Donald Ray; Williams, Richard K., Isolation structures for semiconductor devices including trenches containing conductive material.
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  16. Henley, Francois J., Layer transfer of films utilizing controlled propagation.
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  17. Henley, Francois J., Layer transfer of films utilizing controlled shear region.
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  18. Nobuhiko Sato JP, Method and apparatus for etching a semiconductor article and method of preparing a semiconductor article by using the same.
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  19. Rosemary T. Nettleton, Method and apparatus for treating discharge gas from a Czochralski crystal growing chamber utilizing water spray.
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  20. Henley, Francois J., Method and structure for fabricating solar cells using a thick layer transfer process.
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  21. Lee, Sung-Kwon; Kim, Sang-Ik, Method for fabricating semiconductor device.
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  22. Bruel Michel,FRX ; Aspar Bernard,FRX, Method for obtaining a thin film in particular semiconductor, comprising a protected ion zone and involving an ion implantation.
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  23. Yamazaki, Shunpei; Ohtani, Hisashi, Method of fabricating a semiconductor device.
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  33. Williams, Richard K.; Disney, Donald Ray; Chan, Wai Tien, Method of forming isolation structure in semiconductor substrate.
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  34. Kobae,Kenji; Kubota,Takashi, Method of manufacturing a carriage assembly of a hard disk drive.
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  35. Yamazaki, Shunpei, Method of manufacturing a semiconductor device.
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  40. Yamazaki, Shunpei, Method of manufacturing a semiconductor device having a gate electrode formed over a silicon oxide insulating layer.
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  41. Yamazaki, Shunpei, Method of manufacturing a semiconductor device including thermal oxidation to form an insulating film.
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  42. Yamazaki, Shunpei, Method of manufacturing semiconductor device having island-like single crystal semiconductor layer.
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  43. Takagi, Mikio, Method of surface treatment of semiconductor.
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  44. Yamazaki, Shunpei; Ohtani, Hisashi; Koyama, Jun; Fukunaga, Takeshi, Nonvolatile memory and electronic apparatus.
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  45. Unno, Akira; Sato, Naotake; Miyazaki, Hajime; Doi, Noriyuki, Organic semiconductor device, process for producing the same, and organic semiconductor apparatus.
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  46. Fukunaga, Takeshi, Process for production of SOI substrate and process for production of semiconductor device.
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  47. Fukunaga, Takeshi, Process for production of SOI substrate and process for production of semiconductor device.
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  49. Fukunaga,Takeshi, Process for production of SOI substrate and process for production of semiconductor device.
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  50. Fukunaga, Takeshi, Process for production of SOI substrate and process for production of semiconductor device including the selective forming of porous layer.
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  51. Disney, Donald R.; Williams, Richard K., Processes for forming isolation structures for integrated circuit devices.
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  52. Anbai, Katsuhiko; Oikawa, Masayuki; Kadobe, Masato, Quartz-product baking method and quartz product.
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  63. Sakaguchi,Kiyofumi; Sato,Nobuhiko, Semiconductor substrate, semiconductor device, and method of manufacturing the same.
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  65. Zehavi, Raanan Y.; Boyle, James E.; Delaney, Laurence D., Silicon fixture supporting silicon wafers during high temperature processing.
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  66. Malik, Igor J.; Kang, Sien G., Smoothing method for cleaved films made using a release layer.
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  67. Igor J. Malik ; Sien G. Kang, Smoothing method for cleaved films made using thermal treatment.
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  68. Ito, Masataka, Soi annealing method for reducing HF defects, with lamp, without crystal original particle (COP).
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  69. Sakaguchi, Kiyofumi; Ohmi, Kazuaki; Yanagita, Kazutaka, Substrate and method of manufacturing the same.
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  70. Henley, Francois; Lamm, Al; Chow, Yi-Lei, Substrate cleaving under controlled stress conditions.
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  71. Henley, Francois; Lamm, Al; Chow, Yi-Lei, Substrate cleaving under controlled stress conditions.
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  72. Henley, Francois; Lamm, Al; Chow, Yi-Lei, Substrate cleaving under controlled stress conditions.
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  73. Kang,Sien G.; Malik,Igor J., Surface finishing of SOI substrates using an EPI process.
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  74. Brailove, Adam; Liu, Zuqin; Henley, Francois J.; Lamm, Albert J., Techniques for forming thin films by implantation with reduced channeling.
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  76. Kobayashi, Takeshi, Vertical boat for heat treatment and method for heat treatment of silicon wafer using the same.
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