초록 ▼

An improved semiconductor device which prevents a short circuit between a wiring layer and a semiconductor substrate, caused by the penetration of a contact hole, will be provided. A lower conducting layer is formed on a second interlayer insulating film. A third interlayer insulating film covers lo

An improved semiconductor device which prevents a short circuit between a wiring layer and a semiconductor substrate, caused by the penetration of a contact hole, will be provided. A lower conducting layer is formed on a second interlayer insulating film. A third interlayer insulating film covers lower conducting layer. A contact hole is formed in third interlayer insulating film in order to connect an upper conducting layer and lower conducting layer. A stopper layer of silicide or metal is formed below contact hole between the surface of a semiconductor substrate and lower conducting layer.

대표청구항 ▼

[ What is claimed is:] [1.] A semiconductor device with an upper conducting layer and a lower conducting layer connected via a contact hole, comprising:a first lower conducting layer;a first interlayer insulation film covering said first lower conducting layer;a second lower conducting layer formed

[ What is claimed is:] [1.] A semiconductor device with an upper conducting layer and a lower conducting layer connected via a contact hole, comprising:a first lower conducting layer;a first interlayer insulation film covering said first lower conducting layer;a second lower conducting layer formed on said first interlayer insulation film 5b and off in a horizontal direction from said first lower conducting layer;a second interlayer insulation film formed on said first interlayer insulation film so as to cover said second lower conducting layer;a first contact hole penetrating said first and second interlayer insulation films to expose a surface of said first lower conducting layer;a second contact hole formed in said second interlayer insulation film to expose a surface of said second lower conducting layer;an upper conducting layer formed on said second interlayer insulation film and connected to said first and second lower conducting layers via said first and second contact holes; anda stopper layer formed below said second lower conducting layer and in said first interlayer insulation film and formed of silicide.