초록 ▼

A method of correcting a temperature probe reading in a thermal processing chamber for heating a substrate, including the steps of heating the substrate to a process temperature and using a first, a second and a third probe to measure the temperature of the substrate. The first probe has a first eff

A method of correcting a temperature probe reading in a thermal processing chamber for heating a substrate, including the steps of heating the substrate to a process temperature and using a first, a second and a third probe to measure the temperature of the substrate. The first probe has a first effective reflectivity and the second probe has a second effective reflectivity. The first probe produces a first temperature indication, the second probe produces a second temperature indication and the third probe produces a third temperature indication. The first and second effective reflectivities may be different. From the first and second temperature indications, a corrected temperature reading for the first probe may be derived, wherein the corrected temperature reading is a more accurate indicator of an actual temperature of the substrate than an uncorrected readings produced by both the first and second probes. A corrected temperature reading for the third probe may be derived by adjusting the temperature correction calculated for the first probe according to the measured emissivity sensitivity associated with the environment of the third probe to provide a corrected temperature reading that is a more accurate indicator of an actual temperature of the substrate in the environment of the third probe. An apparatus for carrying out the method is also disclosed.

대표청구항 ▼

[ What is claimed is:] [1.] A method of correcting temperature probe readings in a thermal processing chamber in which a substrate is heated to a process temperature, the method comprising:forming a reflecting cavity on one side of the substrate;using a first probe, a second probe and at least a thi

[ What is claimed is:] [1.] A method of correcting temperature probe readings in a thermal processing chamber in which a substrate is heated to a process temperature, the method comprising:forming a reflecting cavity on one side of the substrate;using a first probe, a second probe and at least a third probe to sample energy from said reflecting cavity, the sampled energy from the first, second and third probes producing first, second and third temperature indications, respectively;varying an effective reflectivity of at least one of the first and second probes;calibrating the thermal processing chamber to derive an emissivity sensitivity factor for the third probe;from the effective reflectivities for the first and second probes, deriving an effective emissivity for the substrate;from the first and second temperature indications and the effective emissivity for the substrate deriving an adjustment temperature for the first probe;from the emissivity sensitivity factor for the third probe and the adjustment temperature, deriving an emissivity sensitive adjustment temperature for the third probe;from the emissivity sensitive adjustment temperature for the third probe and the third temperature indication, deriving a corrected temperature reading for the third probe, wherein the corrected temperature reading for the third probe is a more accurate indicator of an actual temperature of the substrate in the environment of the third probe than are uncorrected readings produced by the third probe.