초록 ▼

A temperature sensor for measuring a temperature of a substrate in a thermal processing chamber is described. The chamber includes a reflector forming a reflecting cavity with a substrate when the substrate is positioned in the chamber. The temperature sensor includes a probe having an input end pos

A temperature sensor for measuring a temperature of a substrate in a thermal processing chamber is described. The chamber includes a reflector forming a reflecting cavity with a substrate when the substrate is positioned in the chamber. The temperature sensor includes a probe having an input end positioned to receive radiation from the reflecting cavity, and a detector optically coupled to an output end of the probe. The radiation entering the probe includes reflected radiation and non-reflected radiation. The detector measures an intensity of a first portion of the radiation entering the probe to generate a first intensity signal and measures an intensity of a second portion of the radiation entering the probe to generate a second intensity signal. The detector is configured so that a ratio of the reflected radiation to the non-reflected radiation is higher in the first portion than the second portion. The two intensity signals are used to calculate the temperature and emissivity of the substrate.

대표청구항 ▼

[ What is claimed is:] [1.] A temperature sensor for measuring a temperature of a substrate in a thermal processing chamber, the chamber including a reflecting cavity with a substrate when the substrate is positioned in the chamber, the temperature sensor comprising:a probe having an input end posit

[ What is claimed is:] [1.] A temperature sensor for measuring a temperature of a substrate in a thermal processing chamber, the chamber including a reflecting cavity with a substrate when the substrate is positioned in the chamber, the temperature sensor comprising:a probe having an input end positioned to receive radiation from the reflecting cavity, wherein the radiation entering the probe includes reflected radiation emitted by the substrate and reflected by the reflector and non-reflected radiation emitted by the substrate and not reflected by the reflector; anda detector optically coupled to an output end of the probe, wherein the detector measures an intensity of a first portion of the radiation entering the probe to generate a first intensity signal and measures an intensity of a second portion of the radiation entering the probe to generate a second intensity signal, the detector being configured so that a ratio of the reflected radiation to the non-reflected radiation is higher in the first portion than the second portion.