초록 ▼

A method of forming a planar interlayer dielectric layer over underlying structures is disclosed. First, a liner oxide layer is formed over the underlying structures. Then, a BPSG layer is formed over the liner oxide layer. The BPSG layer is polished and a cap oxide layer is formed over the BPSG lay

A method of forming a planar interlayer dielectric layer over underlying structures is disclosed. First, a liner oxide layer is formed over the underlying structures. Then, a BPSG layer is formed over the liner oxide layer. The BPSG layer is polished and a cap oxide layer is formed over the BPSG layer. Finally, a nitride layer is formed over the cap oxide layer.

대표청구항 ▼

[ The embodiments of the invention in which an exclusive property or privilege is claimed are defined as follows:] [1.] A method of forming a planar interlayer dielectric layer over underlying structures, the method comprising:forming a liner oxide layer over the underlying structures;forming a BPSG

[ The embodiments of the invention in which an exclusive property or privilege is claimed are defined as follows:] [1.] A method of forming a planar interlayer dielectric layer over underlying structures, the method comprising:forming a liner oxide layer over the underlying structures;forming a BPSG layer over the liner oxide layer;planarizing said BPSG layer;forming a cap oxide layer over the BPSG layer;forming a heat dissipating layer formed from silicon nitride (Si.sub.3 N.sub.4) over the cap oxide layer, said heat dissipating layer being between 300 and 1500 angstroms thick;forming a contact hole through said heat dissipating layer, said cap oxide layer, said BPSG layer, and said liner oxide layer down to the underlying structures;forming a tungsten plug in said contact hole; andforming a conductive structure over said tungsten plug and said heat dissipating layer;wherein said heat dissipating layer acts to conduct heat away from said conductive structure into said underlying structures.