초록 ▼

Provided is a method for forming a ferroelectric capacitor of a semiconductor, which prevents the breakdown of a ferroelectric film induced from the out-diffusion of ingredients of the ferroelectric film. Using a thin film of SBT or Bi.sub.2 O.sub.3 as a diffusion barrier layer capping the SBT ferro

Provided is a method for forming a ferroelectric capacitor of a semiconductor, which prevents the breakdown of a ferroelectric film induced from the out-diffusion of ingredients of the ferroelectric film. Using a thin film of SBT or Bi.sub.2 O.sub.3 as a diffusion barrier layer capping the SBT ferroelectric film can prevent the breakdown of the ferroelectric film induced from the subsequently proceeded thermal treatment process at high temperature. As a result, the invention can decrease the fatigue of the device and enhance margin in the processes and the reliability of the device.

대표청구항 ▼

[ What is claimed is:] [4.] A method for forming a ferroelectric capacitor of semiconductor which comprises the steps of:forming a lower electrode connected to a substrate;forming a ferroelectric thin film of SBT on the lower electrode;forming a thin film of Bi.sub.2 O.sub.3 as a diffusion barrier l

[ What is claimed is:] [4.] A method for forming a ferroelectric capacitor of semiconductor which comprises the steps of:forming a lower electrode connected to a substrate;forming a ferroelectric thin film of SBT on the lower electrode;forming a thin film of Bi.sub.2 O.sub.3 as a diffusion barrier layer in order to prevent the out-diffusion of the ingredients or dopants of the ferroelectric film;selectively etching the Bi.sub.2 O.sub.3 thin film to expose the SBT ferroelectric film; andforming an upper electrode contacted with the exposed SBT ferroelectric film.