초록 ▼

In order to correspond to high integration with large capacity of a semiconductor device, provided are a structure of the semiconductor device and a method for manufacturing the same in which a horizontal dimension can be reduced in either a memory cell region or a region where a peripheral circuit

In order to correspond to high integration with large capacity of a semiconductor device, provided are a structure of the semiconductor device and a method for manufacturing the same in which a horizontal dimension can be reduced in either a memory cell region or a region where a peripheral circuit is to be formed or both the regions. A TFT is superposed on a trench capacitor with an insulation film provided therebetween in a DRAM memory cell region, and a TFT is superposed on a bulk transistor with an insulation film provided therebetween in a region where a peripheral circuit is to be formed. Consequently, elements are arranged three-dimensionally. Thus, a horizontal dimension of a region where each element is to be formed can be reduced.

대표청구항 ▼

[ I claim:] [1.] A semiconductor device comprising:a trench capacitor provided in a semiconductor substrate for constituting a memory cell, the trench capacitor having a plurality of electrodes, one of the electrodes being a storage node;an insulation film provided on said trench capacitor; anda thi

[ I claim:] [1.] A semiconductor device comprising:a trench capacitor provided in a semiconductor substrate for constituting a memory cell, the trench capacitor having a plurality of electrodes, one of the electrodes being a storage node;an insulation film provided on said trench capacitor; anda thin film transistor provided on said insulation film,wherein said thin film transistor is provided in such a manner that at least a part thereof is superposed on said trench capacitor, said thin film transistor having a source/drain region electrically connected to the storage node through a contact provided solely in said insulation film interposed therebetween.