[특허]Deposition of coatings using an atmospheric pressure plasma jet

[미국특허] Deposition of coatings using an atmospheric pressure plasma jet 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	C23C-016/513
출원번호	US-0176046 (1998-10-20)
발명자 / 주소	Babayan Steve E. Selwyn Gary S. Hicks Robert F.
출원인 / 주소	The Regents of the University of California
대리인 / 주소	Freund
인용정보	피인용 횟수 : 40 인용 특허 : 1

초록 ▼

Deposition of coatings using an atmospheric pressure plasma jet. The use of a nonthermal source which is capable of operation at 760 torr is demonstrated. As an example of the application of the present invention, a helium/oxygen gas mixture is introduced into the annular region between two coaxial electrodes driven by a 13.56 MHz radio frequency (rf) source at between 40 and 500 W to produce a stable plasma jet. Silicon dioxide films are deposited by introducing tetraethoxysilane (TEOS) into the effluent stream. A deposition rate of 3020.+-.250 .ANG./min. is achieved with an rf power of 400 W, 0.2 torr of TEOS, 11.1 torr of oxygen, 748.7 torr of helium, and a total gas flow rate of 41 L/min. The deposition rate depends on the oxygen partial pressure, the TEOS partial pressure, and the rf power to the 0.28, 0.47, and 1.41 powers, respectively. However, increasing the temperature decreases the deposition rate. The observed dielectric constants of the films decrease from 5.0.+-.0.2 to 3.81.+-.0.03 as the deposition temperature increases from 115 to 350.degree. C. Infrared spectra of the deposited films at 350.degree. C. show no carbon or hydroxyl ion contamination, indicating excellent material purity.

대표청구항 ▼

[What is claimed is:] [1.](a) generating at least one reactive species in an arcless, atmospheric-pressure, RF plasma discharge in a gas flowing through an annular region between an electrically conducting chamber having a closed end and an open end and a metal electrode located within the chamber and disposed such that the annular region is defined therebetween, whereby said at least one reactive species [flow] flows toward the open end of the chamber;(b) introducing a gaseous precursor species of said material into said at least one reactive species within the chamber in the region of the open end thereof and outside of the plasma discharge, said gaseous precursor species being chosen such that said precursor species reacts with at least one of said at least one reactive species, whereby a gaseous jet capable of forming said material exits through the open end of the chamber; and(c) placing said substrate in the path of the gaseous jet, whereby said material is deposited on said substrate.

이 특허에 인용된 특허 (1) 인용/피인용 타임라인 분석

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IPC	Description
A	생활필수품
A62	인명구조; 소방(사다리 E06C)
A62B	인명구조용의 기구, 장치 또는 방법(특히 의료용에 사용되는 밸브 A61M 39/00; 특히 물에서 쓰이는 인명구조 장치 또는 방법 B63C 9/00; 잠수장비 B63C 11/00; 특히 항공기에 쓰는 것, 예. 낙하산, 투출좌석 B64D; 특히 광산에서 쓰이는 구조장치 E21F 11/00)
A62B-1/08	.. 윈치 또는 풀리에 제동기구가 있는 것

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[미국특허] Deposition of coatings using an atmospheric pressure plasma jet 원문보기