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[미국특허] Method of planarizing the upper surface of a semiconductor wafer 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/302
출원번호 US-0091932 (1998-06-24)
국제출원번호 PCT/US98/08693 (1998-04-30)
§371/§102 date 19980624 (19980624)
국제공개번호 WO-9849723 (1998-11-05)
발명자 / 주소
  • Kaisaki David A.
  • Kranz Heather K.
  • Wood Thomas E.
  • Hardy L. Charles
출원인 / 주소
  • 3M Innovative Properties Company
대리인 / 주소
    Pastirik
인용정보 피인용 횟수 : 140  인용 특허 : 105

초록

This invention pertains to a method of modifying or refining a surface of a wafer suited for semiconductor fabrication. This method may be used to modify a wafer having an unmodified, exposed surface comprised of a layer of a second material deployed over at least one discrete feature of a first mat

대표청구항

[What is claimed is:] [1.]a) providing a wafer comprising at least a first material having a surface etched to form a pattern and at least a second material deployed over the surface of the first material;b) contacting the second material of the wafer to a plurality of three-dimensional abrasive com

이 특허에 인용된 특허 (105) 인용/피인용 타임라인 분석

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  82. Takizawa Gisaburo (Aichi JPX) Senda Tetsushi (Aichi JPX) Miura Shiro (Aichi JPX), Polishing method of goods and abrasive pad therefor.
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이 특허를 인용한 특허 (140) 인용/피인용 타임라인 분석

  1. Lugg, Paul S.; Fletcher, Timothy D., Abrasive article and method of modifying the surface of a workpiece.
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  7. Uchida, Takeshi; Matsuzawa, Jun; Hoshino, Tetsuya; Kamigata, Yasuo; Terazaki, Hiroki; Honma, Yoshio; Kondoh, Seiichi, Abrasive liquid for metal and method for polishing.
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  9. Schwappach, Karl G.; Boutaghou, Zine-Eddine, Abrasive slurry and dressing bar for embedding abrasive particles into substrates.
  10. Cho, Hyun Ju; Kim, Jang Soon; Chang, Suk Ky, Acrylic pressure sensitive adhesive compositions.
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  31. Hardy, L. Charles; Kranz, Heather K.; Wood, Thomas E.; Kaisaki, David A.; Gagliardi, John J.; Clark, John C.; Savu, Patricia M.; Clark, Philip G., Compositions and methods for modifying a surface suited for semiconductor fabrication.
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  34. Butterfield,Paul D.; Chen,Liang Yuh; Hu,Yonqi; Manens,Antoine P.; Mavliev,Rashid; Tsai,Stan D.; Liu,Feng Q.; Wadensweiler,Ralph; Sun,Lizhong; Neo,Siew S.; Duboust,Alain, Conductive polishing article for electrochemical mechanical polishing.
  35. Liu,Zhendong, Corrosion-resistant barrier polishing solution.
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  38. Sun, Lizhong; Li, Shijian, Electrochemically assisted chemical polish.
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  40. Sun, Lizhong; Liu, Feng Q.; Neo, Siew; Tsai, Stan; Chen, Liang-Yuh, Electrolyte with good planarization capability, high removal rate and smooth surface finish for electrochemically controlled copper CMP.
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