초록 ▼

A process for applying a metallization interconnect structure to a semiconductor workpiece having a barrier layer deposited on a surface thereof is set forth. The process includes the forming of an ultra-thin metal seed layer on the barrier layer. The ultra-thin seed layer having a thickness of less

A process for applying a metallization interconnect structure to a semiconductor workpiece having a barrier layer deposited on a surface thereof is set forth. The process includes the forming of an ultra-thin metal seed layer on the barrier layer. The ultra-thin seed layer having a thickness of less than or equal to about 500 Angstroms. The ultra-thin seed layer is then enhanced by depositing additional metal thereon to provide an enhanced seed layer. The enhanced seed layer has a thickness at all points on sidewalls of substantially all recessed features distributed within the workpiece that is equal to or greater than about 10% of the nominal seed layer thickness over an exteriorly disposed surface of the workpiece.

대표청구항 ▼

[What is claimed is:] [1.](a) forming an ultra-thin metal seed layer exterior to the barrier layer using a first deposition process, the seed layer having a thickness of less than or equal to about 500 Angstroms;(b) repairing the ultra-thin seed layer by depositing an additional metal using a second

[What is claimed is:] [1.](a) forming an ultra-thin metal seed layer exterior to the barrier layer using a first deposition process, the seed layer having a thickness of less than or equal to about 500 Angstroms;(b) repairing the ultra-thin seed layer by depositing an additional metal using a second deposition process that is different from the first deposition process to provide a repaired seed layer that is suitable for subsequent electroplating, the repaired seed layer having a thickness at all points on sidewalls of substantially all micro-recessed structures distributed within the workpiece that is equal to or greater than about 10% of the nominal thickness of the enhanced seed layer over the exteriorly disposed surface of the workpiece;(c) electroplating a metal onto the repaired seed layer using a third deposition process using processing parameters that are different from processing parameters used in the second deposition process.