초록 ▼

A method of forming a metal nitride film using chemical vapor deposition (CVD), and a method of forming a metal contact of a semiconductor device using the same, are provided. The method of forming a metal nitride film using chemical vapor deposition (CVD) in which a metal source and a nitrogen sour

A method of forming a metal nitride film using chemical vapor deposition (CVD), and a method of forming a metal contact of a semiconductor device using the same, are provided. The method of forming a metal nitride film using chemical vapor deposition (CVD) in which a metal source and a nitrogen source are used as a precursor, includes the steps of inserting a semiconductor substrate into a deposition chamber, flowing the metal source into the deposition chamber, removing the metal source remaining in the deposition chamber by cutting off the inflow of the metal source and flowing a purge gas into the deposition chamber, cutting off the purge gas and flowing the nitrogen source into the deposition chamber to react with the metal source adsorbed on the semiconductor substrate, and removing the nitrogen source remaining in the deposition chamber by cutting off the inflow of the nitrogen source and flowing the purge gas into the deposition chamber. Accordingly, the metal nitride film has low resistivity and a low content of Cl even with excellent step coverage, and it can be formed at a temperature of 500.degree. C. or lower. Also, a deposition speed, approximately 20 .ANG./cycle, is suitable for mass production.

대표청구항 ▼

[What is claimed is:] [1.](a) inserting a semiconductor substrate into a deposition chamber;(b) admitting the metal source into the deposition chamber;(c) chemisorbing a first portion of the metal source onto the substrate, and physisorbing a second portion of the metal source onto the substrate;pur

[What is claimed is:] [1.](a) inserting a semiconductor substrate into a deposition chamber;(b) admitting the metal source into the deposition chamber;(c) chemisorbing a first portion of the metal source onto the substrate, and physisorbing a second portion of the metal source onto the substrate;purging the metal source from the deposition chamber;admitting the nitrogen source into the deposition chamber;chemisorbing a portion of the nitrogen source onto the substrate, and physisorbing a second portion of the nitrogen source onto the substrate;reacting the chemisorbed and physisorbed metal source with the chemisorbed and physisorbed nitrogen source to form a metal nitride film on the substrate; and,purging the nitrogen source from the deposition chamber.