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A semiconductor device comprising an insulation film covering a semiconductor chip so as to expose electrodes or pads fabricated in the chip and wiring lines located on the insulation film and connected to the respective electrodes or pads is produced by a method which comprises: providing a semicon

A semiconductor device comprising an insulation film covering a semiconductor chip so as to expose electrodes or pads fabricated in the chip and wiring lines located on the insulation film and connected to the respective electrodes or pads is produced by a method which comprises: providing a semiconductor chip provided with an insulation film covering the chip so as to expose a conductor layer for electrodes or pads fabricated in the chip, ion milling the surface of the chip provided with the insulation film by a mixed gas of argon and hydrogen, forming a patterned conductor layer for wiring lines on the ion-milled surface of the chip, and dry etching the surface of the chip provided with the insulation film and the patterned conductor layer by nitrogen gas.

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[What is claimed is:] [1.]providing a semiconductor chip provided with an insulation film covering the chip so as to expose a conductor layer for electrodes or pads fabricated in the chip,ion milling the surface of the chip provided with the insulation film by a mixed gas of argon and hydrogen,formi

[What is claimed is:] [1.]providing a semiconductor chip provided with an insulation film covering the chip so as to expose a conductor layer for electrodes or pads fabricated in the chip,ion milling the surface of the chip provided with the insulation film by a mixed gas of argon and hydrogen,forming a patterned conductor layer for wiring lines on the ion-milled surface of the chip, anddry etching the surface of the chip, provided with the insulation film and the patterned conductor layer, by nitrogen gas.