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Cluster tool apparatus using plasma immersion ion implantation 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/00
  • H05H-001/00
출원번호 US-0124161 (1998-07-28)
발명자 / 주소
  • Henley Francois J.
  • Cheung Nathan
출원인 / 주소
  • Silicon Genesis Corporation
대리인 / 주소
    Townsend and Townsend and Crew LLP
인용정보 피인용 횟수 : 88  인용 특허 : 25

초록

A cluster tool assembly 10, 200, 300 using plasma immersion ion implantation chamber. In some embodiments, the cluster tool assembly also includes a controlled cleaving process chamber, as well as others.

대표청구항

[What is claimed is:] [1.]a transfer chamber comprising a robot therein;a plasma immersion ion implantation chamber ("PIII") coupled to said transfer chamber;a controlled cleaving process (CCP) chamber adapted to provide energy to a selected region of a substrate to initiate a controlled cleaving ac

이 특허에 인용된 특허 (25)

  1. White Nicholas R., Apparatus and method for temperature control of workpieces in vacuum.
  2. Chapek David LeRoy ; Felch Susan Benjamin ; Kissick Michael William ; Malik Shamim Muhammad ; Sheng Tienyu Terry, Apparatus for obtaining dose uniformity in plasma doping (PLAD) ion implantation processes.
  3. Matossian Jesse N. (Canoga Park CA) Williams John D. (Agoura Hills CA), Confinement of secondary electrons in plasma ion processing.
  4. Moslehi Mehrdad M. (Los Altos CA), Direct gas-phase doping of semiconductor wafers using an organic dopant source of phosphorus.
  5. Kellerman Peter L., Filament for ion implanter plasma shower.
  6. Rissman Paul (3509 Laguna Ct. Palo Alto CA 94306) Kruger James B. (164 Kelly Ave. Half Moon Bay CA 94019) Shohet J. Leon (1937 Arlington Pl. Madison WI 53705), Forming a buried insulator layer using plasma source ion implantation.
  7. Shohet Juda L. (Madison WI), Ion purification for plasma ion implantation.
  8. Goetz George G. (Ellicott City MD) Dawson Warren M. (Baltimore MD), Low temperature reaction bonding.
  9. Hasegawa Makoto (Kawasaki JPX) Saito Tsuyoshi (Tokyo JPX) Higuchi Fumihiko (Tokyo JPX) Amano Hideaki (Zama JPX) Naitoh Katsunori (Yamanashi-ken JPX) Tozawa Takashi (Yamanashi-ken JPX) Nakagome Tatsuy, Magnetron plasma processing system.
  10. Levy Karl B. (Los Altos CA), Method for forming capacitor in trench of semiconductor wafer by implantation of trench surfaces with oxygen.
  11. Sato Nobuhiko,JPX ; Yonehara Takao,JPX ; Sakaguchi Kiyofumi,JPX, Method for producing semiconductor substrate.
  12. Chan Chung (Newton MA) Allen Ryne C. (Framingham MA) Husein Imad (Boston MA) Zhou Yaunzhong (Malden MA), Method for the deposition and modification of thin films using a combination of vacuum arcs and plasma immersion ion imp.
  13. Matossian Jesse N. (Woodland Hills CA) Goebel Dan M. (Tarzana CA), Method of implanting ions from a plasma into an object.
  14. Foster Robert F. (Weston MA) Srinivas Damodaran (Tempe AZ), Method of nucleating tungsten on titanium nitride by CVD without silane.
  15. Maydan Dan (Los Altos Hills CA) Somekh Sasson (Redwood City CA) Wang David N. (Cupertino CA) Cheng David (San Jose CA) Toshima Masato (San Jose CA) Harari Isaac (Mountain View CA) Hoppe Peter D. (Sun, Multi-chamber integrated process system.
  16. Sueta Norio (Chiba JPX) Hoshino Hiroyasu (Tokyo JPX), Paper punch with punched-hole reinforcing piece sticking mechanism.
  17. Sheng Terry T. (San Jose CA), Plasma immersion ion implantation (PI3) apparatus.
  18. Hama Kiichi (Chino JPX) Hata Jiro (Yamanashi-ken JPX) Hongoh Toshiaki (Yamanashi-ken JPX), Plasma process apparatus.
  19. Rose Peter H. (N. Conway NH), Producing ion beams suitable for ion implantation and improved ion implantation apparatus and techniques.
  20. Atherton Robert W. (1694 Miller Ave. Los Altos CA 94024), Real world modeling and control process for integrated manufacturing equipment.
  21. Moniwa Masahiro (Hachioji JPX) Miyao Masanobu (Tokorozawa JPX) Shukuri Shoji (Koganei JPX) Murakami Eiichi (Kokubunji JPX) Warabisako Terunori (Tokyo JPX) Tamura Masao (Tokorozawa JPX) Natsuaki Nobuy, SOI process for forming a thin film transistor using solid phase epitaxy.
  22. Nakato Tatsuo (Vancouver WA) Meyyappan Narayanan (Woburn MA), Shallow SIMOX processing method using molecular ion implantation.
  23. Wittkower Andrew B. (Rockport MA), Simox materials through energy variation.
  24. Glavish Hilton F. (Incline Village NV), System and method for producing oscillating magnetic fields in working gaps useful for irradiating a surface with atomic.
  25. Edwards Richard C. (Ringwood NJ) Kolesa Michael S. (Suffern NY) Ishikawa Hiroichi (Mahwah NJ), Wafer processing cluster tool batch preheating and degassing method.

이 특허를 인용한 특허 (88)

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