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[미국특허] Method and apparatus for producing a uniform density plasma above a substrate 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C23C-014/34
출원번호 US-0856335 (1997-05-14)
발명자 / 주소
  • Tanaka Yoichiro
  • Hong Liubo
  • Wada Yuichi,JPX
출원인 / 주소
  • Applied Materials, Inc.
대리인 / 주소
    Konrad, Raynes & Victor, LLP
인용정보 피인용 횟수 : 16  인용 특허 : 72

초록

An apparatus and method for processing a substrate in the presence of a plasma, the apparatus including: a chamber enclosing a region maintained at a low pressure; a substrate support disposed in the region and having a substantially horizontal substrate support surface for supporting a substrate; a

대표청구항

[What is claimed is:] [1.]a chamber defining a chamber axis;a source of deposition material;a substrate support disposed in said chamber and having a substrate support surface adapted to support a substrate that has an exposed surface, said substrate support surface being axially displaced from said

이 특허에 인용된 특허 (72) 인용/피인용 타임라인 분석

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  63. Sachdev Harbans S. (Hopewell Junction NY) Forster John C. (Poughkeepsie NY) Linehan Leo L. (Walden NY) MacDonald Scott A. (San Jose CA) Muller K. Paul L. (Wappingers Falls NY) Mlynko Walter E. (Colch, Residue free vertical pattern transfer with top surface imaging resists.
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  67. Moslehi Mehrdad M. (Dallas TX), Source and method for generating high-density plasma with inductive power coupling.
  68. Ogle John (Milpitas CA) Yin Gerald Z. (San Jose CA), Split-phase driver for plasma etch system.
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  70. Xu Zheng (Foster City CA), Synchronous modulation bias sputter method and apparatus for complete planarization of metal films.
  71. Sawada Susumi (Kitaibaraki JPX) Kanou Osamu (Kitaibaraki JPX) Wada Hironori (Kitaibaraki JPX) Anan Junichi (Kitaibaraki JPX) Seki Takakazu (Kitaibaraki JPX), Thin film deposition system.
  72. Matsuoka Morito (Katsuta JPX) Ono Ken\ichi (Mito JPX), Thin film forming apparatus and ion source utilizing plasma sputtering.

이 특허를 인용한 특허 (16) 인용/피인용 타임라인 분석

  1. Jaim Nulman ; Sergio Edelstein ; Mani Subramani ; Zheng Xu ; Howard Grunes ; Avi Tepman ; John Forster ; Praburam Gopalraja, Coils for generating a plasma and for sputtering.
  2. Nulman, Jaim; Edelstein, Sergio; Subramani, Mani; Xu, Zheng; Grunes, Howard E.; Tepman, Avi; Forster, John C.; Gopalraja, Praburam, Coils for generating a plasma and for sputtering.
  3. Brcka, Jozef, Etch system with integrated inductive coupling.
  4. Gopalraja, Praburam; Xu, Zheng; Rosenstein, Michael; Forster, John C., Feedthrough overlap coil.
  5. Liubo Hong, Hybrid coil design for ionized deposition.
  6. Klein, Michael Sigmund; Witherell, Charles Eichhorn, Implantable biodegradable wound closure device.
  7. Klein, Michael Sigmund; Witherell, Charles Eichhorn, Implantable biodegradable wound closure device and method.
  8. Mehrdad M. Moslehi ; Ajit P. Paranjpe, Inductively-coupled-plasma ionized physical-vapor deposition apparatus, method and system.
  9. Brcka,Jozef, Integrated electrostatic inductive coupling for plasma processing.
  10. Bhatnagar, Ashish; Murugesh, Laxman; Gopalakrishnan, Padma, Localized surface annealing of components for substrate processing chambers.
  11. Miller, Michael Andrew; Ding, Peijun; Tang, Howard; Chiang, Tony; Fu, Jianming, Method and apparatus for depositing a tantalum-containing layer on a substrate.
  12. Johnson, David; Westerman, Russell, Method and apparatus to improve plasma etch uniformity.
  13. Birkmeyer, Jeffrey; Li, Youming; Deming, Steve; Ottosson, Mats G., Physical vapor deposition with multi-point clamp.
  14. Pavloff, Cristopher Mark; Hong, Ilyoung, Process kit for substrate processing chamber.
  15. Riker, Martin; Wang, Wei W., Substrate cleaning chamber and components.
  16. Bhatnagar, Ashish; Murugesh, Laxman; Gopalakrishnan, Padma, Surface annealing of components for substrate processing chambers.

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