초록 ▼

A method of forming tungsten films on oxide layers is disclosed. The tungsten films are formed on the oxide layers by treating the oxide using a silane based gas mixture followed by the thermal decomposition of a W(CO).sub.6 precursor. After the W(CO).sub.6 precursor is thermally decomposed, additio

A method of forming tungsten films on oxide layers is disclosed. The tungsten films are formed on the oxide layers by treating the oxide using a silane based gas mixture followed by the thermal decomposition of a W(CO).sub.6 precursor. After the W(CO).sub.6 precursor is thermally decomposed, additional layer of tungsten may be optionally formed thereon from the thermal decomposition of tungsten hexafluoride (WF.sub.6).

대표청구항

[ What is claimed is:] [1.]1. A method of thin film deposition for integrated circuit fabrication, comprising the steps of:(a) treating a substrate with a dielectric material thereon using a gas mixture comprising a silicon compound; and(b) forming one or more tungsten (W) films on the substrate.

[ What is claimed is:] [1.]1. A method of thin film deposition for integrated circuit fabrication, comprising the steps of:(a) treating a substrate with a dielectric material thereon using a gas mixture comprising a silicon compound; and(b) forming one or more tungsten (W) films on the substrate.