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Cerium oxide abrasive and method of polishing substrates 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C09K-003/14
  • C09G-001/02
출원번호 US-0269650 (1999-08-10)
우선권정보 JP0207866 (1997-08-01)
국제출원번호 PCT/JP97/03490 (1997-09-30)
§371/§102 date 19990810 (19990810)
국제공개번호 WO-9814987 (1998-04-09)
발명자 / 주소
  • Yoshida Masato,JPX
  • Ashizawa Toranosuke,JPX
  • Terazaki Hiroki,JPX
  • Kurata Yasushi,JPX
  • Matsuzawa Jun,JPX
  • Tanno Kiyohito,JPX
  • Ootuki Yuuto,JPX
출원인 / 주소
  • Hitachi Chemical Company, Ltd., JPX
대리인 / 주소
    Pennie & Edmonds LLP
인용정보 피인용 횟수 : 56  인용 특허 : 6

초록

This invention provides a cerium oxide abrasive with which the surfaces of substrates such as SiO.sub.2 insulating films can be polished at a high rate without causing scratches. The abrasive of the present invention comprises a slurry comprising cerium oxide particles whose primary particles have a

대표청구항

[ What is claimed is:] [1.]1. A cerium oxide abrasive comprising a slurry containing cerium oxide particles comprising plural primary particles wherein:said primary particles consist essentially of cerium oxide;said primary particles have a median diameter of from 30 nm to 250 nm;said cerium oxide p

이 특허에 인용된 특허 (6)

  1. Ueda Kazumasa (Niihama JPX) Takeuchi Yoshiaki (Niihama JPX), Abrasive particle, method for producing the same, and method of use of the same.
  2. Le Loarer Jean-Luc (La Rochelle FRX), Ceric oxide with new morphological characteristics and method for obtaining same.
  3. Wang Jiun-Fang (Piscataway NJ), Oxide particles and method for producing them.
  4. Ronay Maria, Polish process and slurry for planarization.
  5. Ueda Naruo,JPX ; Yamamoto Norikazu,JPX ; Hanawa Kenzo,JPX ; Kato Kazuhiko,JPX, Polishing agent, method for producing the same and method for polishing.
  6. Ota Isao (Funabushi JPX) Nishimura Tohru (Funabushi JPX), Process for preparing crystalline ceric oxide.

이 특허를 인용한 특허 (56)

  1. Fujie, Yoshinori; Yamaguchi, Sumihisa, Abrasive.
  2. Ota, Isao; Nishimura, Tohru; Tanimoto, Kenji, Abrasive compound for glass hard disk platter.
  3. Chinone, Kanshi, Abrasive compounds for semiconductor planarization.
  4. Takahashi, Atsushi; Nagai, Yuuki; Maezawa, Akihiro, Abrasive material regeneration method and regenerated abrasive material.
  5. Jung, Seung Won, Abrasive particle, polishing slurry, and method of manufacturing semiconductor device using the same.
  6. Park, Jin Hyung, Abrasive particles, polishing slurry and method of fabricating abrasive particles.
  7. Yoshida, Masato; Ashizawa, Toranosuke; Terazaki, Hiroki; Ootuki, Yuuto; Kurata, Yasushi; Matsuzawa, Jun; Tanno, Kiyohito, Abrasive, method of polishing target member and process for producing semiconductor device.
  8. Yoshida, Masato; Ashizawa, Toranosuke; Terazaki, Hiroki; Ootuki, Yuuto; Kurata, Yasushi; Matsuzawa, Jun; Tanno, Kiyohito, Abrasive, method of polishing target member and process for producing semiconductor device.
  9. Yoshida, Masato; Ashizawa, Toranosuke; Terazaki, Hiroki; Ootuki, Yuuto; Kurata, Yasushi; Matsuzawa, Jun; Tanno, Kiyohito, Abrasive, method of polishing target member and process for producing semiconductor device.
  10. Yoshida, Masato; Ashizawa, Toranosuke; Terazaki, Hiroki; Ootuki, Yuuto; Kurata, Yasushi; Matsuzawa, Jun; Tanno, Kiyohito, Abrasive, method of polishing target member and process for producing semiconductor device.
  11. Burba, III, John L.; Hassler, Carl R.; O'Kelley, C. Brock; Lupo, Joseph A.; Pascoe, Joseph R., Apparatus for treating a flow of an aqueous solution containing arsenic.
  12. Hattori, Masayuki; Ando, Michiaki; Nishimoto, Kazuo; Kawahashi, Nobuo, Aqueous dispersion for chemical mechanical polishing.
  13. Oswald, Eric; Frink, Sean; Kraft, Bradley; Santora, Brian, Auto-stopping slurries for chemical-mechanical polishing of topographic dielectric silicon dioxide.
  14. Akahori, Toshihiko; Ashizawa, Toranosuke; Hirai, Keizo; Kurihara, Miho; Yoshida, Masato; Kurata, Yasushi, CMP abrasive, liquid additive for CMP abrasive and method for polishing substrate.
  15. Akahori,Toshihiko; Ashizawa,Toranosuke; Hirai,Keizo; Kurihara,Miho; Yoshida,Masato; Kurata,Yasushi, CMP abrasive, liquid additive for CMP abrasive and method for polishing substrate.
  16. Tateyama, Yoshikuni; Hirano, Tomoyuki, CMP method and semiconductor manufacturing apparatus.
  17. Fukasawa, Masato; Koyama, Naoyuki; Haga, Kouji; Akutsu, Toshiaki, CMP polishing slurry and method of polishing substrate.
  18. Paik, Un Gyu; Park, Jea Gun; Kim, Sang Kyun; Kim, Ye Hwan; Suh, Myoung Won; Kim, Dae Hyeong, CMP slurry, preparation method thereof and method of polishing substrate using the same.
  19. Haerle, Andrew G.; Wang, Jun, Ceria material and method of forming same.
  20. Haerle, Andrew G.; Wang, Jun, Ceria material and method of forming same.
  21. Haruki Nojo JP; Sumit Pandey ; Jeremy Stephens ; Ravikumar Ramachandran, Ceria slurry solution for improved defect control of silicon dioxide chemical-mechanical polishing.
  22. Yoshida, Masato; Ashizawa, Toranosuke; Terazaki, Hiroki; Kurata, Yasushi; Matsuzawa, Jun; Tanno, Kiyohito; Ootuki, Yuuto, Cerium oxide abrasive and method of polishing substrates.
  23. Yoshida, Masato; Ashizawa, Toranosuke; Terazaki, Hiroki; Kurata, Yasushi; Matsuzawa, Jun; Tanno, Kiyohito; Ootuki, Yuuto, Cerium oxide abrasive and method of polishing substrates.
  24. Yoshida, Masato; Ashizawa, Toranosuke; Terazaki, Hiroki; Kurata, Yasushi; Matsuzawa, Jun; Tanno, Kiyohito; Ootuki, Yuuto, Cerium oxide abrasive and method of polishing substrates.
  25. Enomoto, Kazuhiro; Yoshikawa, Shigeru, Cerium oxide slurry, cerium oxide polishing slurry and method for polishing substrate using the same.
  26. Hiraiwa, Tadashi; Masuda, Tomoyuki; Bessho, Naoki, Cerium oxide-based abrasive, and production method and use thereof.
  27. Steckenrider, J. Scott; Mueller, Brian L., Chemical mechanical polishing slurry and method for using same.
  28. Burba, John, Composition and process for making the composition.
  29. Witham, Richard Donald; McNew, Edward Bayer; Burba, III, John Leslie, Composition for removing arsenic from aqueous streams.
  30. Burba, III, John L., Composition for treating a fluid.
  31. Morinaga, Hitoshi; Furuta, Shinji; Tamai, Kazusei, Filtration method, method for purifying polishing composition using it, method for regenerating filter to be used for filtration, and filter regenerating apparatus.
  32. Feng, Xiangdong; Her, Yie-Shein; Yang, Yi, Hydrothermal synthesis of cerium-titanium oxide for use in CMP.
  33. Ko,Sen Hou; Song,Kevin H., Low cost and low dishing slurry for polysilicon CMP.
  34. Lee,Dong Jun; So,Jae Hyun; Kang,Kyoung Moon; Kim,Nam Soo, Method for producing improved cerium oxide abrasive particles and compositions including such particles.
  35. Takahashi, Atsushi; Nagai, Yuuki; Maezawa, Akihiro, Method for separating polishing material and regenerated polishing material.
  36. Feng, Xiangdong; Her, Yie-Shein, Method of forming particles for use in chemical-mechanical polishing slurries and the particles formed by the process.
  37. Ito, Terunori; Watanabe, Hiroyuki; Ushiyama, Kazuya; Kuwabara, Shigeru; Uchino, Yoshitsugu, Method of manufacturing cerium-based polishing agent.
  38. Hsu, Wei-Yung; Prabhu, Gopalakrishna B.; Sun, Lizhong; Carl, Daniel A., Methods and compositions for chemical mechanical polishing.
  39. Bonner, Benjamin A.; Iyer, Anand N.; Kumar, Deepak N.; Osterheld, Thomas H.; Hsu, Wei-Yung; Kim, Yong-Sik R.; Smith, Christopher W.; Zhang, Huanbo, Methods and compositions for chemical mechanical polishing shallow trench isolation substrates.
  40. McEntee,John F.; Perbost,Michel G. M.; Vandenburg,Joseph, Methods and devices for modifying a substrate surface.
  41. Jung, Seung Won, Methods of manufacturing abrasive particle and polishing slurry.
  42. Morinaga, Hitoshi; Tamai, Kazusei; Asano, Hiroshi, Polishing composition and polishing method using the same.
  43. Kondo, Seiichi; Fujimori, Masaaki; Sakuma, Noriyuki; Homma, Yoshio, Polishing method, metallization fabrication method, method for manufacturing semiconductor device and semiconductor device.
  44. Kondo,Seiichi; Fujimori,Masaaki; Sakuma,Noriyuki; Homma,Yoshio, Polishing method, metallization fabrication method, method for manufacturing semiconductor device and semiconductor device.
  45. Prabhu,Gopalakrishna B.; Osterheld,Thomas H.; Leung,Garlen C.; Zhong,Adam H.; McReynolds,Peter; Tao,Yi Yung; Menk,Gregory E.; Mohan,Vasanth N.; Lee,Christopher Heung Gyun, Polishing processes for shallow trench isolation substrates.
  46. Kim, Dae Hyeong; Hong, Seok Min; Jeon, Jae Hyun; Park, Un Gyu; Park, Jea Gun; Kim, Yong Kuk, Polishing slurry, method of producing same, and method of polishing substrate.
  47. Kim,Dae Hyung; Hong,Seok Min; Jeon,Jae Hyun; Kim,Ho Seong; Park,Hyun Soo; Paik,Un Gyu; Park,Jae Gun; Kim,Yong Kuk, Polishing slurry, method of producing same, and method of polishing substrate.
  48. Burba, III, John L.; Oriard, Tim L., Process and apparatus for treating a gas containing a contaminant.
  49. Feng, Xiangdong; Her, Yie-Shein, Process for producing abrasive particles and abrasive particles produced by the process.
  50. Witham, Richard Donald; McNew, Edward Bayer; Burba, III, John Leslie, Process for removing arsenic from aqueous streams.
  51. Witham,Richard Donald; McNew,Edward Bayer; Burba, III,John Leslie, Process for removing arsenic from aqueous streams.
  52. Witham,Richard Donald; McNew,Edward Bayer; Burba, III,John Leslie, Process for removing arsenic from drinking water.
  53. Cable, Robert; Hassler, Carl; Burba, John, Rare earth removal of hydrated and hydroxyl species.
  54. Psaras, Dimitrios; Gao, Yuan; Haneline, Mason; Lupo, Joseph; Landi, Carol, Removal of arsenic from aqueous streams with cerium (IV) oxide compositions.
  55. Kim,Dae Hyeong; Hong,Seok Min; Jeon,Jae Hyun; Kim,Ho Seong; Park,Hyun Soo; Paik,Un Gyu; Park,Jae Gun; Kim,Yong Kuk, Slurry for CMP and method of polishing substrate using same.
  56. Witham, Richard Donald; McNew, Edward Bayer; Burba, III, John Leslie, Water purification device for arsenic removal.
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