초록

The invention relates to a method of producing a thin layer of semiconductor material including:

대표청구항 ▼

[ What is claimed is:] [1.]1. A method of producing a thin layer of semiconductor material from a wafer of the material having a face, comprising the steps ofsubjecting the semiconductor wafer to implantation with a rare gas or hydrogen for producing, at a depth within the volume of the wafer, an im

[ What is claimed is:] [1.]1. A method of producing a thin layer of semiconductor material from a wafer of the material having a face, comprising the steps ofsubjecting the semiconductor wafer to implantation with a rare gas or hydrogen for producing, at a depth within the volume of the wafer, an implanted layer parallel to the face and separating the wafer into an upper region intended to constitute the thin layer and a lower region constituting a remainder part of the wafer;subjecting the wafer to a thermal treatment so as to embrittle the wafer along the layer of implantation; andapplying, during or after the thermal treatment, a mechanical energy to the wafer sufficient to separate the upper and lower regions from each other along the embrittled layer.