초록 ▼

A method of forming an interconnect, comprising the following steps. A dielectric layer, having an upper surface, is formed over a semiconductor structure. A trench, having side walls and a bottom, is formed within the dielectric layer. A barrier layer is then formed over the dielectric layer and li

A method of forming an interconnect, comprising the following steps. A dielectric layer, having an upper surface, is formed over a semiconductor structure. A trench, having side walls and a bottom, is formed within the dielectric layer. A barrier layer is then formed over the dielectric layer and lining the trench's side walls and bottom. A first copper layer is deposited on the barrier layer, filling the lined trench and blanket filling the barrier layer covered dielectric layer. The first copper layer is planarized, exposing the upper surface of the dielectric layer and forming a dished copper filled trench. A second copper layer is selectively deposited on the dished copper filled trench by either electroless plating or chemical vapor deposition (CVD). The second copper layer extending above the upper surface of the dielectric layer. The second copper layer is then planarized to form an essentially planar copper filled trench, or interconnect, level with the upper surface of said dielectric layer.

대표청구항 ▼

[ We claim:] [10.]10. A method of forming an interconnect, comprising the steps of:providing a semiconductor structure;forming a dielectric layer over said semiconductor structure, said dielectric layer having an upper surface;forming a trench within said dielectric layer, said trench having side wa

[ We claim:] [10.]10. A method of forming an interconnect, comprising the steps of:providing a semiconductor structure;forming a dielectric layer over said semiconductor structure, said dielectric layer having an upper surface;forming a trench within said dielectric layer, said trench having side walls and a bottom;forming a barrier layer over said dielectric layer and lining said trench side walls and bottom;depositing copper on said barrier layer to form a first copper layer filling said lined trench and blanket filling said barrier layer covered dielectric layer;planarizing said first copper layer and said barrier layer on said upper surface of said dielectric layer, exposing said upper surface of said dielectric layer and forming a dished copper filled trench;selectively depositing copper on said dished copper filled trench to form a second copper layer over said dished copper filled trench and extending above said upper surface of said dielectric layer; andplanarizing said second copper layer to form an essentially planar copper interconnect level with said upper surface of said dielectric layer.