초록 ▼

An integrated circuit comprising a conductive region formed on a semiconductor substrate, a silicate glass layer formed on the conductive region, and an etch stop layer formed on the silicate glass layer. The integrated circuit also includes a borderless contact that is coupled to the conductive reg

An integrated circuit comprising a conductive region formed on a semiconductor substrate, a silicate glass layer formed on the conductive region, and an etch stop layer formed on the silicate glass layer. The integrated circuit also includes a borderless contact that is coupled to the conductive region.

대표청구항 ▼

[ What is claimed is:] [1.]1. A method for forming an integrated circuit comprising:forming a conductive region on a semiconductor substrate;forming a silicate glass layer on the conductive region;forming an etch stop layer on the silicate glass layer; andforming a borderless contact coupled to the

[ What is claimed is:] [1.]1. A method for forming an integrated circuit comprising:forming a conductive region on a semiconductor substrate;forming a silicate glass layer on the conductive region;forming an etch stop layer on the silicate glass layer; andforming a borderless contact coupled to the conductive region by etching through the etch stop layer, then etching through the silicate glass layer to form a via, then filling the via with a conductive material.