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[미국특허] Microwave enhanced CVD system under magnetic field 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C23C-016/00
  • C03C-015/00
출원번호 US-0814993 (1997-03-14)
우선권정보 JP0228083 (1985-10-14)
발명자 / 주소
  • Yamazaki Shunpei,JPX
출원인 / 주소
  • Semiconductor Energy Laboratory Co., Ltd., JPX
대리인 / 주소
    Nixon Peabody LLPCostellia
인용정보 피인용 횟수 : 15  인용 특허 : 111

초록

An improved chemical vapor deposition or etching is shown in which cyclotron resonance and photo or plasma CVD cooperate to deposit a layer with high performance at a high deposition speed. The high deposition speed is attributed to the cyclotron resonance while the high performance is attributed to

대표청구항

[ What is claimed is:] [1.]1. A plasma processing apparatus comprising:a resonance chamber;a gas introducing means for introducing a process gas into the resonance chamber;a means for emitting a microwave into the resonance chamber;a means for inducing a magnetic field in the resonance chamber to fo

이 특허에 인용된 특허 (111) 인용/피인용 타임라인 분석

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이 특허를 인용한 특허 (15) 인용/피인용 타임라인 분석

  1. Tan,Zhengquan; Li,Dongqing; Zygmunt,Walter, HDP-CVD deposition process for filling high aspect ratio gaps.
  2. Kapoor, Bikram; Karim, M. Ziaul; Wang, Anchuan, Hydrogen assisted HDP-CVD deposition process for aggressive gap-fill technology.
  3. Tan, Zhengquan; Li, Dongqing; Zygmunt, Walter; Ishikawa, Tetsuya, Hydrogen assisted undoped silicon oxide deposition process for HDP-CVD.
  4. Karim,M. Ziaul; Li,DongQing; Byun,Jeong Soo; Pham,Thanh N., In-situ-etch-assisted HDP deposition.
  5. Karim,M. Ziaul; Li,DongQing; Byun,Jeong Soo; Pham,Thanh N., In-situ-etch-assisted HDP deposition using SiF.
  6. Karim, M. Ziaul; Li, DongQing; Byun, Jeong Soo; Pham, Thanh N., In-situ-etch-assisted HDP deposition using SiF4 and hydrogen.
  7. Hong, Sukwon; Tran, Toan; Mallick, Abhijit; Liang, Jingmei; Ingle, Nitin K., Low shrinkage dielectric films.
  8. Mungekar, Hemant P.; Wu, Jing; Lee, Young S.; Wang, Anchuan, Low wet etch rate silicon nitride film.
  9. Lin, Hui-Chu, Method for forming silicon oxide layer.
  10. Hogan, Timothy J.; Taylor, Timothy A., Method for improving ash rate uniformity in photoresist ashing process equipment.
  11. Karim, M. Ziaul; Moghadam, Farhad K.; Salimian, Siamak, Methods and systems for high-aspect-ratio gapfill using atomic-oxygen generation.
  12. Mungekar,Hemant P.; Lee,Young S; Vellaikal,Manoj; Greig,Karen; Kapoor,Bikram, Oxygen plasma treatment for enhanced HDP-CVD gapfill.
  13. Ishikawa, Hiraku, Plasma processing method and semiconductor device.
  14. Nemani,Srinivas D.; Lee,Young S., Silicon oxide gapfill deposition using liquid precursors.
  15. Rasheed,Muhammad M.; Kim,Steven H, Use of enhanced turbomolecular pump for gapfill deposition using high flows of low-mass fluent gas.

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