초록

A thick layer of copper is formed on the outside the protective overcoat (PO) which protects an integrated circuit, and forms both an inductor and the upper electrode of a capacitor. Placing this layer outside the PO greatly reduces parasitic capacitances with the substrate in the devices.

대표청구항 ▼

[ What is claimed is:] [1.]1. An integrated circuit device, comprising:a semiconductor substrate;a field oxide region formed over a first portion of said semiconductor substrate;a polysilicon layer formed over and insulated from a second portion of said semiconductor substrate;a first insulator laye

[ What is claimed is:] [1.]1. An integrated circuit device, comprising:a semiconductor substrate;a field oxide region formed over a first portion of said semiconductor substrate;a polysilicon layer formed over and insulated from a second portion of said semiconductor substrate;a first insulator layer formed over said field oxide region and said polysilicon layer;a metal layer formed over a portion of said first insulator layer;a second insulator layer formed over said metal layer and said first insulator layer;a first metal capacitor plate formed over said second insulator layer and said field oxide region;a protective overcoat formed over said second insulator layer, an opening in said protective overcoat exposing said first metal capacitor plate;a capacitor dielectric formed over said first metal capacitor plate; anda second metal capacitor plate formed over said capacitor dielectric.