초록

An interconnection structure includes an interlevel insulating film, made of organic-containing silicon dioxide, between lower- and upper-level metal interconnects. A phenyl group, bonded to a silicon atom, is introduced into silicon dioxide in the organic-containing silicon dioxide.

대표청구항 ▼

[ What is claimed is:] [1.]1. A method for forming an interconnection structure, comprising the steps of:forming an interlevel insulating film out of organic-containing silicon dioxide over lower-level metal interconnects by a CVD process using a reactive gas containing phenyltrimethoxy silane, a ph

[ What is claimed is:] [1.]1. A method for forming an interconnection structure, comprising the steps of:forming an interlevel insulating film out of organic-containing silicon dioxide over lower-level metal interconnects by a CVD process using a reactive gas containing phenyltrimethoxy silane, a phenyl group, bonded to a silicon atom, being introduced into silicon dioxide in the organic-containing silicon dioxide;forming wiring grooves and contact holes, communicating with the wiring grooves and exposing the lower-level metal interconnects, in the interlevel insulating film; andforming upper-level metal interconnects and contacts, interconnecting the lower- and upper-level metal interconnects together, by filling in the wiring grooves and the contact holes with a metal film.