초록 ▼

A method and apparatus for depositing a low dielectric constant film includes depositing a silicon oxide based film, preferably by reaction of an organosilicon compound and an oxidizing gas at a low RF power level from about 10 W to about 500 W, exposing the silicon oxide based film to water or a hy

A method and apparatus for depositing a low dielectric constant film includes depositing a silicon oxide based film, preferably by reaction of an organosilicon compound and an oxidizing gas at a low RF power level from about 10 W to about 500 W, exposing the silicon oxide based film to water or a hydrophobic-imparting surfactant such as hexamethyldisilazane, and curing the silicon oxide based film at an elevated temperature. Dissociation of the oxidizing gas can be increased in a separate microwave chamber to assist in controlling the carbon content of the deposited film. The moisture resistance of the silicon oxide based films is enhanced.

대표청구항 ▼

[ What is claimed is:] [1.]1. A method for depositing a low dielectric constant film, comprising:depositing a silicon oxide based film comprising carbon-silicon bonds and a carbon content of between about 1% and about 50% by atomic weight on a substrate wherein the silicon oxide based film is locate

[ What is claimed is:] [1.]1. A method for depositing a low dielectric constant film, comprising:depositing a silicon oxide based film comprising carbon-silicon bonds and a carbon content of between about 1% and about 50% by atomic weight on a substrate wherein the silicon oxide based film is located between conductive interconnects or conductive contacts/vias;exposing the silicon oxide based film to a hydrophobic-imparting surfactant; and thencuring the silicon oxide based film.