$\require{mediawiki-texvc}$

연합인증

연합인증 가입 기관의 연구자들은 소속기관의 인증정보(ID와 암호)를 이용해 다른 대학, 연구기관, 서비스 공급자의 다양한 온라인 자원과 연구 데이터를 이용할 수 있습니다.

이는 여행자가 자국에서 발행 받은 여권으로 세계 각국을 자유롭게 여행할 수 있는 것과 같습니다.

연합인증으로 이용이 가능한 서비스는 NTIS, DataON, Edison, Kafe, Webinar 등이 있습니다.

한번의 인증절차만으로 연합인증 가입 서비스에 추가 로그인 없이 이용이 가능합니다.

다만, 연합인증을 위해서는 최초 1회만 인증 절차가 필요합니다. (회원이 아닐 경우 회원 가입이 필요합니다.)

연합인증 절차는 다음과 같습니다.

최초이용시에는
ScienceON에 로그인 → 연합인증 서비스 접속 → 로그인 (본인 확인 또는 회원가입) → 서비스 이용

그 이후에는
ScienceON 로그인 → 연합인증 서비스 접속 → 서비스 이용

연합인증을 활용하시면 KISTI가 제공하는 다양한 서비스를 편리하게 이용하실 수 있습니다.

Electro-chemical deposition system 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C25D-017/00
  • C25B-015/00
  • C25B-013/00
  • C25B-009/00
출원번호 US-0289074 (1999-04-08)
발명자 / 주소
  • Dordi Yezdi
  • Olgado Donald J.
  • Morad Ratson
  • Hey Peter
  • Denome Mark
  • Sugarman Michael
  • Lloyd Mark
  • Stevens Joseph
  • Marohl Dan
  • Shin Ho Seon
  • Ravinovich Eugene
  • Cheung Robin
  • Sinha Ashok K
출원인 / 주소
  • Applied Materials, Inc.
대리인 / 주소
    Thomason, Moser & Patterson, L.L.P.
인용정보 피인용 횟수 : 240  인용 특허 : 48

초록

The present invention provides an electro-chemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The electro-chemical dep

대표청구항

[ What is claimed is:] [1.]1. An electro-chemical deposition system, comprising:a) a mainframe having a mainframe wafer transfer robot;b) a loading station disposed in connection with the mainframe;c) one or more processing cells disposed in connection with the mainframe; andd) an electrolyte supply

이 특허에 인용된 특허 (48)

  1. Watson Angus (Bricktown NJ), Acid copper electroplating baths containing brightening and leveling additives.
  2. Cheung Robin ; Sinha Ashok ; Tepman Avi ; Carl Dan, Apparatus for electro-chemical deposition with thermal anneal chamber.
  3. Konishi Nobuo (Tokyo JPX) Sekiguchi Kenji (Tokyo JPX), Apparatus for removing process liquid.
  4. Kozai ; Teruo ; Ohara ; Shigeharu ; Suzuki ; Hiroshi ; Yanagihara ; Shin go, Apparatus for washing semiconductor wafers.
  5. Eckles William E. (Cleveland OH) Bishop Craig V. (Cleveland OH) Vaitekunas Peter T. (Cleveland OH), Automatic analyzer and control system for electroplating baths.
  6. Sago Hiroyoshi (Kanagawa JPX) Fujiyama Shigemi (Kanagawa JPX) Kudo Katsuhiko (Kanagawa JPX) Kumazawa Hirotsugu (Kanagawa JPX), Cleaning device for cleaning planar workpiece.
  7. Rattan William D. (San Jose CA) Walwyn Craig M. (San Jose CA), Disc cleaning machine.
  8. Brewer James M. (Austin TX), Edge bead removal process for spin on films.
  9. Poris Jaime, Electrodeposition apparatus with virtual anode.
  10. Mayer Linda J. (Denville NJ) Barbieri Stephen C. (Rutherford NJ), Electrodeposition of bright copper.
  11. Creutz ; deceased ; Hans-Gerhard ; Herr ; Roy W., Electrodeposition of copper.
  12. Izumi Takayuki,JPX ; Okajima Takehiko,JPX, Electroplating apparatus.
  13. Johnston Samuel J. B. (Ashford GB2), Electroplating arrangements.
  14. Uzoh Cyprian E., Electroplating workpiece fixture having liquid gap spacer.
  15. Drummond Geoffrey N. ; Scholl Richard A., Enhanced reactive DC sputtering system.
  16. Martin Sylvia (Shelby Township ; Macomb County MI), Functional fluid additives for acid copper electroplating baths.
  17. Chizinsky George (143 West St. Beverly Farms MA 01915), Heated plate rapid thermal processor.
  18. Crank Sue E. (Coppell TX), Integrated circuit copper metallization process using a lift-off seed layer and a thick-plated conductor layer.
  19. Yamamura Takayoshi (Hamamatsu JPX) Endo Yoshihisa (Hamamatsu JPX) Shinmura Akira (Hamamatsu JPX), Metal plating apparatus.
  20. Shortes Samuel R. (Plano TX) Millis Edwin Graham (Dallas TX), Method and apparatus for cleaning the surface of a semiconductor slice with a liquid spray of de-ionized water.
  21. Bunkofske Raymond James, Method and apparatus for coating a semiconductor wafer.
  22. Quazi Fazle S. (Boulder CO), Method and apparatus for sputtering a dielectric target or for reactive sputtering.
  23. Thompson Raymon F. (Kalispell MT) Gordon Robert W. (Seattle WA) Durado Daniel (Kalispell MT), Method for single wafer processing in which a semiconductor wafer is contacted with a fluid.
  24. Goffman Martin (Edison NJ) Kudryk Val (Closter NJ), Method for the electrodeposition of metals.
  25. Mullarkey Edward J. (5501 Seminary Rd. ; No. 1404 S. Falls Church VA 22041), Method of electroplating a precious metal on a semiconductor device, integrated circuit or the like.
  26. Kloiber Allan J. (Marshall Township ; Allegheny County PA) Bubien Gary G. (Center PA) Osmanski Gerald S. (Brighton Township ; Beaver County PA), Modular apparatus and method for surface treatment of parts with liquid baths.
  27. Raistrick Ian D. (Menlo Park CA) Poris Jaime (Portola Valley CA) Huggins Robert A. (Stanford CA granted to U.S. Department of Energy under the provisions of 42 U.S.C. 2182), Molten salt lithium cells.
  28. Raistrick Ian D. (Menlo Park CA) Poris Jaime (Portola Valley CA) Huggins Robert A. (Stanford CA), Molten salt lithium cells.
  29. Bergman Eric J. (Kalispell MT) Reardon Timothy J. (Kalispell MT) Thompson Raymon F. (Lakeside MT) Owczarz Aleksander (Kalispell MT), Multi-station semiconductor processor with volatilization.
  30. Ishida Hirofumi (Hiratsuka JPX), Plating device for wafer.
  31. Ishida Hirofumi (Kanagawa JPX), Plating device for wafer.
  32. Poris Jaime (Los Gatos CA), Precision weighing to monitor the thickness and uniformity of deposited or etched thin film.
  33. Sellers Jeff C. (Palmyra NY), Preferential sputtering of insulators from conductive targets.
  34. Aigo Seiichiro (3-15-13 ; Negishi ; Daito-ku Tokyo JPX), Process for washing and drying a semiconductor element.
  35. Gronet Christian M. (Palo Alto CA) Gibbons James F. (Palo Alto CA), Rapid thermal heating apparatus and method.
  36. Cuthbert John D. (Bethlehem PA) Soos Nicholas A. (Lower Macungie Township ; Lehigh County PA), Removal of coating from periphery of a semiconductor wafer.
  37. Poris Jaime (409 Capitola Ave. Capitola CA 95010), Selective metal electrodeposition process.
  38. Poris Jaime (21955 Bear Creek Way Los Gatos CA 95030), Selective metal electrodeposition process and apparatus.
  39. Allen Landon K. (Sunnyvale CA), Selective removal of coating material on a coated substrate.
  40. Thompson Raymon F. (Kalispell MT) Gordon Robert W. (Seattle WA) Durado Daniel (Kalispell MT), Single wafer processor.
  41. Thompson Raymon F. (Kalispell MT) Owczarz Aleksander (Kalispell MT), Single wafer processor with a frame.
  42. Sato ; Masamichi ; Fujii ; Itsuo, Spin coating process.
  43. Leibovitz Jacques (San Jose CA) Cobarruviaz Maria L. (Cupertino CA) Scholz Kenneth D. (Palo Alto CA) Chao Clinton C. (Redwood City CA), Stacked solid via formation in integrated circuit systems.
  44. Leibovitz Jacques (San Jose CA) Cobarruviaz Maria L. (Cupertino CA) Scholz Kenneth D. (Palo Alto CA) Chao Clinton C. (Redwood City CA), Stacked solid via formation in integrated circuit systems.
  45. Hayashida Ichiro (Kawagoe JPX) Kakizawa Masahiko (Kawagoe JPX) Umekita Kenichi (Kawagoe JPX) Nawa Hiroyoshi (Kawagoe JPX) Muraoka Hisashi (Yokohama JPX), Surface treating cleaning method.
  46. Tuchida Junichi (Kanagawa JPX) Takamatsu Toshiyuki (Chiba JPX), Surface treatment method and apparatus for a semiconductor wafer.
  47. Powell Walter W. (Peculiar MO) Seifert Gary A. (Lee\s Summit MO), Vacuum-type article holder and methods of supportively retaining articles.
  48. Andricacos Panayotis C. (Croton-on-Hudson NY) Berridge Kirk G. (Fishkill NY) Dukovic John O. (Pleasantville NY) Flotta Matteo (Yorktown Heights NY) Ordonez Jose (Pleasant Valley NY) Poweleit Helmut R, Vertical paddle plating cell.

이 특허를 인용한 특허 (240)

  1. Woodruff, Daniel J.; Hanson, Kyle M.; Eudy, Steve L.; Weber, Curtis A.; Harris, Randy, Adaptable electrochemical processing chamber.
  2. Markle, Richard J., Adjustable wafer stage, and a method and system for performing process operations using same.
  3. Sun,Lizhong; Tsai,Stan; Redeker,Fritz, Advanced electrolytic polish (AEP) assisted metal wafer planarization method and apparatus.
  4. Nemani, Srinivas D.; Koshizawa, Takehito, Air gap process.
  5. Purayath, Vinod R.; Ingle, Nitin K., Air gaps between copper lines.
  6. Kang, Sean; Ko, Jungmin; Luere, Oliver, Airgap formation with damage-free copper.
  7. Lee, Wei Ti; Hassan, Mohd Fadzli Anwar; Guo, Ted; Yu, Sang-Ho, Aluminum contact integration on cobalt silicide junction.
  8. Wang, Xikun; Wang, Anchuan; Ingle, Nitin K., Aluminum oxide selective etch.
  9. Wang, Xikun; Wang, Anchuan; Ingle, Nitin K., Aluminum selective etch.
  10. Xue, Jun; Hsu, Ching-Mei; Li, Zihui; Godet, Ludovic; Wang, Anchuan; Ingle, Nitin K., Anisotropic gap etch.
  11. Yang, Michael X.; Kovarsky, Nicolay Y., Anolyte for copper plating.
  12. Chen,Linlin; Wilson,Gregory J.; McHugh,Paul R.; Weaver,Robert A.; Ritzdorf,Thomas L., Apparatus and method for electrochemically depositing metal on a semiconductor workpiece.
  13. Chen,Linlin; Wilson,Gregory J.; McHugh,Paul R.; Weaver,Robert A.; Ritzdorf,Thomas L., Apparatus and method for electrochemically depositing metal on a semiconductor workpiece.
  14. Hartz, Helge; Nopper, Markus; Preusse, Axel, Apparatus and method for removing bubbles from a process liquid.
  15. Hanson,Kyle M., Apparatus and methods for electrochemical processing of microelectronic workpieces.
  16. Hanson,Kyle M.; Ritzdorf,Thomas L.; Wilson,Gregory J.; McHugh,Paul R., Apparatus and methods for electrochemical processing of microelectronic workpieces.
  17. Hanson,Kyle M.; Ritzdorf,Thomas L.; Wilson,Gregory J.; McHugh,Paul R., Apparatus and methods for electrochemical processing of microelectronic workpieces.
  18. Lubomirsky,Dmitry; Shanmugasundram,Arulkumar; Pancham,Ian A.; Lopatin,Sergey, Apparatus for electroless deposition.
  19. Lubomirsky, Dmitry; Shanmugasundram, Arulkumar; Ellwanger, Russell; Pancham, Ian A.; Cheboli, Ramakrishna; Weidman, Timothy W., Apparatus for electroless deposition of metals onto semiconductor substrates.
  20. Lubomirsky, Dmitry; Shanmugasundram, Arulkumar; Pancham, Ian A., Apparatus for electroless deposition of metals onto semiconductor substrates.
  21. Keigler, Arthur; Harrell, John; Liu, Zhenqiu; Wu, Qunwei, Apparatus for fluid processing a workpiece.
  22. Keigler, Arthur; Wu, Qunwei; Liu, Zhenqiu; Harrell, John, Balancing pressure to improve a fluid seal.
  23. Keigler, Arthur; Wu, Qunwei; Liu, Zhenqiu; Harrell, John, Balancing pressure to improve a fluid seal.
  24. Benjaminson, David; Lubomirsky, Dmitry; Math, Ananda Seelavanth; Natarajan, Saravanakumar; Chourey, Shubham, Bolted wafer chuck thermal management systems and methods for wafer processing systems.
  25. Benjaminson, David; Lubomirsky, Dmitry; Math, Ananda Seelavanth; Natarajan, Saravanakumar; Chourey, Shubham, Bolted wafer chuck thermal management systems and methods for wafer processing systems.
  26. Lubomirsky, Dmitry, Chamber with flow-through source.
  27. Lubomirsky, Dmitry, Chamber with flow-through source.
  28. Hanson, Kyle M.; Klocke, John L., Chambers, systems, and methods for electrochemically processing microfeature workpieces.
  29. Klocke,John; Hanson,Kyle M, Chambers, systems, and methods for electrochemically processing microfeature workpieces.
  30. Klocke,John; Hanson,Kyle M, Chambers, systems, and methods for electrochemically processing microfeature workpieces.
  31. Liang, Qiwei; Chen, Xinglong; Chuc, Kien; Lubomirsky, Dmitry; Park, Soonam; Yang, Jang-Gyoo; Venkataraman, Shankar; Tran, Toan; Hinckley, Kimberly; Garg, Saurabh, Chemical control features in wafer process equipment.
  32. Liang, Qiwei; Chen, Xinglong; Chuc, Kien; Lubomirsky, Dmitry; Park, Soonam; Yang, Jang-Gyoo; Venkataraman, Shankar; Tran, Toan; Hinckley, Kimberly; Garg, Saurabh, Chemical control features in wafer process equipment.
  33. Wang, Xikun; Pandit, Mandar; Cui, Zhenjiang; Korolik, Mikhail; Wang, Anchuan; Ingle, Nitin K.; Liu, Jie, Chlorine-based hardmask removal.
  34. Maydan, Dan, Coated anode apparatus and associated method.
  35. Wang, Xikun; Cui, Zhenjiang; Park, Soonam; Ingle, Nitin K., Cobalt-containing material removal.
  36. Lubomirsky, Dmitry; Kim, Sung Je, Conditioned semiconductor system parts.
  37. Wang, Anchuan; Zhang, Jingchun; Ingle, Nitin K.; Lee, Young S., Conformal oxide dry etch.
  38. Wang, Anchuan; Zhang, Jingchun; Ingle, Nitin K.; Lee, Young S., Conformal oxide dry etch.
  39. Weidman, Timothy W.; Wijekoon, Kapila P.; Zhu, Zhize; Gelatos, Avgerinos V. (Jerry); Khandelwal, Amit; Shanmugasundram, Arulkumar; Yang, Michael X.; Mei, Fang; Moghadam, Farhad K., Contact metallization scheme using a barrier layer over a silicide layer.
  40. Herchen,Harald, Contact ring with embedded flexible contacts.
  41. Hoinkis, Mark; Yan, Chun; Miyazoe, Hiroyuki; Joseph, Eric, Copper residue chamber clean.
  42. Zhu, Lina; Kang, Sean S.; Nemani, Srinivas D.; Kao, Chia-Ling, Delicate dry clean.
  43. Park, Seung H.; Wang, Yunyu; Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K., Differential silicon oxide etch.
  44. Park, Seung H.; Wang, Yunyu; Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K., Differential silicon oxide etch.
  45. Purayath, Vinod R.; Wang, Anchuan; Ingle, Nitin K., Dopant etch selectivity control.
  46. Zhang, Jingchun; Ingle, Nitin K.; Wang, Anchuan, Dry etch process.
  47. Kim, Sang Hyuk; Yang, Dongqing; Lee, Young S.; Jung, Weon Young; Kim, Sang-jin; Hsu, Ching-Mei; Wang, Anchuan; Ingle, Nitin K., Dry-etch for selective oxidation removal.
  48. Wang, Xikun; Hsu, Ching-Mei; Ingle, Nitin K.; Li, Zihui; Wang, Anchuan, Dry-etch for selective tungsten removal.
  49. Wang, Xikun; Hsu, Ching-Mei; Ingle, Nitin K.; Li, Zihui; Wang, Anchuan, Dry-etch for selective tungsten removal.
  50. Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K.; Wang, Yunyu; Lee, Young, Dry-etch for silicon-and-carbon-containing films.
  51. Ren, He; Yang, Jang-Gyoo; Baek, Jonghoon; Wang, Anchuan; Park, Soonam; Garg, Saurabh; Chen, Xinglong; Ingle, Nitin K., Dry-etch selectivity.
  52. Ren, He; Yang, Jang-Gyoo; Baek, Jonghoon; Wang, Anchuan; Park, Soonam; Garg, Saurabh; Chen, Xinglong; Ingle, Nitin K., Dry-etch selectivity.
  53. Cho, Tae Seung; Sen, Yi-Heng; Park, Soonam; Lubomirsky, Dmitry, Dual discharge modes operation for remote plasma.
  54. Stevens, Joe; Olgado, Donald; Ko, Alex; Mok, Yeuk-Fai Edwin, Edge bead removal/spin rinse dry (EBR/SRD) module.
  55. Chae, Moosung; Moon, Bum Ki; Kim, Sun-Oo; Shum, Danny Pak-Chum, Electro chemical deposition systems and methods of manufacturing using the same.
  56. Chae, Moosung; Moon, Bum Ki; Kim, Sunoo; Shum, Danny Pak-Chum, Electro chemical deposition systems and methods of manufacturing using the same.
  57. Dordi, Yezdi; Stevens, Joe; Edwards, Roy; Lowrance, Bob; Sugarman, Michael; Denome, Mark, Electro-chemical deposition cell for face-up processing of single semiconductor substrates.
  58. Dordi, Yezdi; Olgado, Donald J.; Morad, Ratson; Hey, Peter; Denome, Mark; Sugarman, Michael; Lloyd, Mark; Stevens, Joseph; Marohl, Dan; Shin, Ho Seon; Ravinovich, Eugene; Cheung, Robin; Sinha, Ashok , Electro-chemical deposition system.
  59. Yahalom, Joseph; Gandikota, Srinivas; McGuirk, Christopher R.; Padhi, Deenesh, Electro-chemical polishing apparatus.
  60. Keigler, Arthur; Guarnaccia, David; Papapanayiotou, Demetrius; Hander, Jonathan, Electrochemical deposition apparatus with remote catholyte fluid management.
  61. Stevens,Joseph J.; Lubomirsky,Dmitry; Pancham,Ian; Olgado,Donald J. K.; Grunes,Howard E.; Mok,Yeuk Fai Edwin, Electroless deposition apparatus.
  62. Padhi, Deenesh; Yahalom, Joseph; Ramanathan, Sivakami; McGuirk, Chris R.; Gandikota, Srinivas; Dixit, Girish, Electroless deposition method.
  63. Padhi, Deenesh; Yahalom, Joseph; Ramanathan, Sivakami; McGuirk, Chris R.; Gandikota, Srinivas; Dixit, Girish, Electroless deposition method.
  64. Gandikota, Srinivas; McGuirk, Chris R.; Padhi, Deenesh; Malik, Muhammad Atif; Ramanathan, Sivakami; Dixit, Girish A.; Cheung, Robin, Electroless deposition method over sub-micron apertures.
  65. Stewart, Michael P.; Weidman, Timothy W.; Shanmugasundram, Arulkumar; Eaglesham, David J., Electroless deposition process on a silicon contact.
  66. Stevens, Joseph J.; Lubomirsky, Dmitry; Pancham, Ian; Olgado, Donald J.; Grunes, Howard E.; Mok, Yeuk-Fai Edwin; Dixit, Girish, Electroless plating system.
  67. Cohen, Uri, Electroplated metallic conductors.
  68. Woodruff,Daniel J.; Hanson,Kyle M., Electroplating apparatus with segmented anode array.
  69. Woodruff,Daniel J.; Hanson,Kyle M., Electroplating apparatus with segmented anode array.
  70. Cohen, Uri, Enhanced electrochemical deposition filling.
  71. Ingle, Nitin K.; Lubomirsky, Dmitry; Chen, Xinglong; Venkataraman, Shankar, Enhanced etching processes using remote plasma sources.
  72. Korolik, Mikhail; Ingle, Nitin K.; Zhang, Jingchun; Wang, Anchuan; Liu, Jie, Etch suppression with germanium.
  73. Wang, Xikun; Liu, Jie; Wang, Anchuan; Ingle, Nitin K., Even tungsten etch for high aspect ratio trenches.
  74. Purayath, Vinod R.; Ingle, Nitin K., Flash gate air gap.
  75. Pandit, Mandar; Wang, Xikun; Cui, Zhenjiang; Korolik, Mikhail; Wang, Anchuan; Ingle, Nitin K., Fluorine-based hardmask removal.
  76. Park, Seung; Wang, Xikun; Liu, Jie; Wang, Anchuan; Kim, Sang-jin, Gas-phase tungsten etch.
  77. Kim, Sung Je; Kalita, Laksheswar; Pareek, Yogita; Kadam, Ankur; Goradia, Prerna Sonthalia; Thakur, Bipin; Lubomirsky, Dmitry, Generation of compact alumina passivation layers on aluminum plasma equipment components.
  78. Korolik, Mikhail; Ingle, Nitin; Kioussis, Dimitri, Germanium etching systems and methods.
  79. Cho, Tae; Kang, Sang Won; Yang, Dongqing; Lu, Raymond W.; Hillman, Peter; Celeste, Nicholas; Tan, Tien Fak; Park, Soonam; Lubomirsky, Dmitry, Grooved insulator to reduce leakage current.
  80. Cohen, Uri, High speed electroplating metallic conductors.
  81. Tran, Toan Q.; Malik, Sultan; Lubomirsky, Dmitry; Roy, Shambhu N.; Kobayashi, Satoru; Cho, Tae Seung; Park, Soonam; Venkataraman, Shankar, High temperature chuck for plasma processing systems.
  82. Chen, Zhijun; Li, Zihui; Ingle, Nitin K.; Wang, Anchuan; Venkataraman, Shankar, Highly selective doped oxide removal method.
  83. Stockbower, David W., Hydrophobic and hydrophilic membranes to vent trapped gases in a plating cell.
  84. Chen, Xinglong; Lubomirsky, Dmitry; Venkataraman, Shankar, Insulated semiconductor faceplate designs.
  85. Purayath, Vinod R.; Thakur, Randhir; Venkataraman, Shankar; Ingle, Nitin K., Integrated bit-line airgap formation and gate stack post clean.
  86. Purayath, Vinod R.; Thakur, Randhir; Venkataraman, Shankar; Ingle, Nitin K., Integrated bit-line airgap formation and gate stack post clean.
  87. Purayath, Vinod R.; Thakur, Randhir; Ingle, Nitin K., Integrated oxide and nitride recess for better channel contact in 3D architectures.
  88. Purayath, Vinod R.; Thakur, Randhir; Venkataraman, Shankar; Ingle, Nitin K., Integrated oxide recess and floating gate fin trimming.
  89. Dordi, Yezdi N.; Cheung, Robin, Integrated solder bump deposition apparatus and method.
  90. Sapre, Kedar; Ingle, Nitin; Tang, Jing, Intrench profile.
  91. Sapre, Kedar; Ingle, Nitin; Tang, Jing, Intrench profile.
  92. Nguyen, Son T.; Lubomirsky, Dmitry, Layered thin film heater and method of fabrication.
  93. Hsu, Ching-Mei; Ingle, Nitin K.; Hamana, Hiroshi; Wang, Anchuan, Low temperature gas-phase carbon removal.
  94. Purayath, Vinod R.; Thakur, Randhir; Ingle, Nitin K., Metal air gap.
  95. Chen,B. Michelle; Shin,Ho Seon; Dordi,Yezdi; Morad,Ratson; Cheung,Robin, Method and apparatus for annealing copper films.
  96. McHugh, Paul R.; Wilson, Gregory J.; Hanson, Kyle M., Method and apparatus for controlling vessel characteristics, including shape and thieving current for processing microfeature workpieces.
  97. McHugh,Paul R.; Wilson,Gregory J.; Hanson,Kyle M., Method and apparatus for controlling vessel characteristics, including shape and thieving current for processing microfeature workpieces.
  98. Sun, Lizhong; Tsai, Stan D.; Redeker, Fred C., Method and apparatus for electrochemical-mechanical planarization.
  99. Lee,Hsien Ming; Lin,Jing Cheng; Pan,Shing Chyang; Tsai,Ming Hsing; Su,Hung Wen; Chou,Shih Wei; Shue,Shau Lin; Cheng,Kuo Wei; Ko,Ting Chu, Method and apparatus for fabricating metal layer.
  100. Keigler, Arthur; Harrell, John; Liu, Zhenqiu; Wu, Qunwei, Method and apparatus for fluid processing a workpiece.
  101. Keigler, Arthur; Harrell, John; Liu, Zhenqiu; Wu, Qunwei, Method and apparatus for fluid processing a workpiece.
  102. Keigler,Arthur; Harrell,John; Liu,Zhenqiu; Wu,Qunwei, Method and apparatus for fluid processing a workpiece.
  103. Morad, Ratson; Shin, Ho Seon; Cheung, Robin; Kogan, Igor, Method and apparatus for heating and cooling substrates.
  104. Hey, Peter; Kwak, Byung-Sung Leo, Method and apparatus to overcome anomalies in copper seed layers and to tune for feature size and aspect ratio.
  105. Dordi, Yezdi N.; Stevens, Joseph J.; Sugarman, Michael N., Method and associated apparatus for tilting a substrate upon entry for metal deposition.
  106. Kitano, Junichi; Matsuyama, Yuji; Kitano, Takahiro; Yaegashi, Hidetami, Method and system for coating and developing.
  107. Hsu, Wei-Yung; Chen, Liang-Yuh; Morad, Ratson; Carl, Daniel A., Method for dishing reduction and feature passivation in polishing processes.
  108. Keigler, Arthur; Harrell, John; Liu, Zhenqiu; Wu, Qunwei, Method for fluid processing a workpiece.
  109. Lopatin,Sergey; Shanmugasundram,Arulkumar; Lubomirsky,Dmitry; Pancham,Ian A., Method for forming CoWRe alloys by electroless deposition.
  110. Zheng, Bo; Bajaj, Rajeev; Wang, Zhonghui Alex, Method for regulating the electrical power applied to a substrate during an immersion process.
  111. Kao, Chien-Teh; Chou, Jing-Pei (Connie); Lai, Chiukin (Steven); Umotoy, Sal; Huston, Joel M.; Trinh, Son; Chang, Mei; Yuan, Xiaoxiong (John); Chang, Yu; Lu, Xinliang; Wang, Wei W.; Phan, See-Eng, Method for removing oxides.
  112. Zheng, Bo; Wang, Hougong; Dixit, Girish; Chen, Fusen, Method of application of electrical biasing to enhance metal deposition.
  113. Cheung, Robin; Carl, Daniel A.; Chen, Liang-Yuh; Dordi, Yezdi; Smith, Paul F.; Morad, Ratson; Hey, Peter; Sinha, Ashok, Method of conditioning electrochemical baths in plating technology.
  114. Ko, Jungmin, Method of fin patterning.
  115. Huang, Chen-Ming; Yang, Sen-Shan, Method of reducing stress migration in integrated circuits.
  116. Cohen, Uri, Methods for activating openings for jets electroplating.
  117. Li, Zihui; Kao, Chia-Ling; Wang, Anchuan; Ingle, Nitin K., Methods for anisotropic control of selective silicon removal.
  118. Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin, Methods for etch of SiN films.
  119. Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin, Methods for etch of metal and metal-oxide films.
  120. Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K., Methods for etch of metal and metal-oxide films.
  121. Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin, Methods for etch of sin films.
  122. Hong, Sukwon; Hamana, Hiroshi; Liang, Jingmei, Methods of reducing substrate dislocation during gapfill processing.
  123. Chen, Guan-Shian; Yang, Michael X., Modular electrochemical processing system.
  124. Chen, Zhijun; Park, Seung; Korolik, Mikhail; Wang, Anchuan; Ingle, Nitin K., Non-local plasma oxide etch.
  125. Chen, Zhijun; Park, Seung; Korolik, Mikhail; Wang, Anchuan; Ingle, Nitin K., Non-local plasma oxide etch.
  126. Wang, Xikun; Liu, Jie; Wang, Anchuan; Ingle, Nitin K.; Anthis, Jeffrey W.; Schmiege, Benjamin, Oxide and metal removal.
  127. Chen, Zhijun; Wang, Anchuan; Ingle, Nitin K., Oxide etch selectivity enhancement.
  128. Chen, Zhijun; Wang, Anchuan; Ingle, Nitin K., Oxide etch selectivity enhancement.
  129. Xu, Lin; Chen, Zhijun; Wang, Anchuan; Nguyen, Son T., Oxide etch selectivity systems and methods.
  130. Lubomirsky, Dmitry, Oxygen compatible plasma source.
  131. Chen, Xinglong; Yang, Jang-Gyoo; Tam, Alexander; Tam, Elisha, Pedestal with multi-zone temperature control and multiple purge capabilities.
  132. Lubomirsky, Dmitry, Plasma processing system with direct outlet toroidal plasma source.
  133. Ingle, Nitin K.; Kachian, Jessica Sevanne; Xu, Lin; Park, Soonam; Wang, Xikun; Anthis, Jeffrey W., Plasma-free metal etch.
  134. Minami, Yoshio, Plating apparatus.
  135. Sendai, Satoshi; Tomioka, Kenya; Tsuda, Katsumi; Ozawa, Naomitsu, Plating apparatus and method.
  136. Yoshioka,Junichiro; Saito,Nobutoshi; Mukaiyama,Yoshitaka; Tokuoka,Tsuyoshi, Plating apparatus and method.
  137. Mizohata,Yasuhiro; Matsubara,Hideaki; Koyama,Yoshihiro, Plating apparatus, cartridge and copper dissolution tank for use in the plating apparatus, and plating method.
  138. Cho, Tae Seung; Sen, Yi-Heng; Park, Soonam; Lubomirsky, Dmitry, Polarity control for remote plasma.
  139. Choi, Tom; Ko, Jungmin; Kang, Sean, Poly directional etch by oxidation.
  140. Ramanathan, Sivakami; Padhi, Deenesh; Gandikota, Srinivas; Dixit, Girish A., Post rinse to improve selective deposition of electroless cobalt on copper for ULSI application.
  141. Lu, Jiong-Ping; Chen, Linlin; Gonzalez, Jr., David; Guo, Honglin, Pre-ECD wet surface modification to improve wettability and reduced void defect.
  142. Zhang, Jingchun; Zhang, Hanshen, Procedure for etch rate consistency.
  143. Zhang, Jingchun; Zhang, Hanshen, Procedure for etch rate consistency.
  144. Lubomirsky, Dmitry; Weidman, Timothy W.; Shanmugasundram, Arulkumar; Kovarsky, Nicolay Y.; Wijekoon, Kapila, Process for electroless copper deposition.
  145. Wang, Anchuan; Chen, Xinglong; Li, Zihui; Hamana, Hiroshi; Chen, Zhijun; Hsu, Ching-Mei; Huang, Jiayin; Ingle, Nitin K.; Lubomirsky, Dmitry; Venkataraman, Shankar; Thakur, Randhir, Processing systems and methods for halide scavenging.
  146. Wang, Anchuan; Chen, Xinglong; Li, Zihui; Hamana, Hiroshi; Chen, Zhijun; Hsu, Ching-Mei; Huang, Jiayin; Ingle, Nitin K.; Lubomirsky, Dmitry; Venkataraman, Shankar; Thakur, Randhir, Processing systems and methods for halide scavenging.
  147. Wang, Anchuan; Chen, Xinglong; Li, Zihui; Hamana, Hiroshi; Chen, Zhijun; Hsu, Ching-Mei; Huang, Jiayin; Ingle, Nitin K.; Lubomirsky, Dmitry; Venkataraman, Shankar; Thakur, Randhir, Processing systems and methods for halide scavenging.
  148. Wang, Anchuan; Chen, Xinglong; Li, Zihui; Hamana, Hiroshi; Chen, Zhijun; Hsu, Ching-Mei; Huang, Jiayin; Ingle, Nitin K.; Lubomirsky, Dmitry; Venkataraman, Shankar; Thakur, Randhir, Processing systems and methods for halide scavenging.
  149. Wang, Anchuan; Chen, Xinglong; Li, Zihui; Hamana, Hiroshi; Chen, Zhijun; Hsu, Ching-Mei; Huang, Jiayin; Ingle, Nitin K.; Lubomirsky, Dmitry; Venkataraman, Shankar; Thakur, Randhir, Processing systems and methods for halide scavenging.
  150. Wang, Anchuan; Chen, Xinglong; Li, Zihui; Hamana, Hiroshi; Chen, Zhijun; Hsu, Ching-Mei; Huang, Jiayin; Ingle, Nitin K.; Lubomirsky, Dmitry; Venkataraman, Shankar; Thakur, Randhir, Processing systems and methods for halide scavenging.
  151. Wang, Anchuan; Chen, Xinglong; Li, Zihui; Hamana, Hiroshi; Chen, Zhijun; Hsu, Ching-Mei; Huang, Jiayin; Ingle, Nitin K.; Lubomirsky, Dmitry; Venkataraman, Shankar; Thakur, Randhir, Processing systems and methods for halide scavenging.
  152. Wang, Anchuan; Chen, Xinglong; Li, Zihui; Hamana, Hiroshi; Chen, Zhijun; Hsu, Ching-Mei; Huang, Jiayin; Ingle, Nitin K.; Lubomirsky, Dmitry; Venkataraman, Shankar; Thakur, Randhir, Processing systems and methods for halide scavenging.
  153. Naik, Mehul; Ma, Paul F.; Nemani, Srinivas D., Protective via cap for improved interconnect performance.
  154. Kobayashi, Satoru; Park, Soonam; Lubomirsky, Dmitry, Radial waveguide systems and methods for post-match control of microwaves.
  155. Kobayashi, Satoru; Park, Soonam; Lubomirsky, Dmitry; Sugai, Hideo, Radial waveguide systems and methods for post-match control of microwaves.
  156. Kobayashi, Satoru; Park, Soonam; Lubomirsky, Dmitry; Sugai, Hideo, Radial waveguide systems and methods for post-match control of microwaves.
  157. Kobayashi, Satoru; Park, Soonam; Lubomirsky, Dmitry; Sugai, Hideo, Radial waveguide systems and methods for post-match control of microwaves.
  158. Chen, Zhijun; Zhang, Jingchun; Hsu, Ching-Mei; Park, Seung; Wang, Anchuan; Ingle, Nitin K., Radical-component oxide etch.
  159. Chen, Zhijun; Zhang, Jingchun; Hsu, Ching-Mei; Park, Seung; Wang, Anchuan; Ingle, Nitin K., Radical-component oxide etch.
  160. Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K., Remotely-excited fluorine and water vapor etch.
  161. Xu, Lin; Chen, Zhijun; Huang, Jiayin; Wang, Anchuan, Removal methods for high aspect ratio structures.
  162. Xu, Lin; Chen, Zhijun; Huang, Jiayin; Wang, Anchuan, Removal methods for high aspect ratio structures.
  163. Hongo, Akihisa; Katakabe, Ichiro; Morisawa, Shinya, Revolution member supporting apparatus and semiconductor substrate processing apparatus.
  164. Yang, Dongqing; Zhu, Lala; Wang, Fei; Ingle, Nitin K., Saving ion-damaged spacers.
  165. Chen, Zhijun; Huang, Jiayin; Wang, Anchuan; Ingle, Nitin, Selective SiN lateral recess.
  166. Wang, Xikun; Lei, Jianxin; Ingle, Nitin; Shaviv, Roey, Selective cobalt removal for bottom up gapfill.
  167. Ingle, Nitin K.; Kachian, Jessica Sevanne; Xu, Lin; Park, Soonam; Wang, Xikun; Anthis, Jeffrey W., Selective etch for metal-containing materials.
  168. Ingle, Nitin K.; Kachian, Jessica Sevanne; Xu, Lin; Park, Soonam; Wang, Xikun; Anthis, Jeffrey W., Selective etch for metal-containing materials.
  169. Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K., Selective etch for silicon films.
  170. Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K., Selective etch for silicon films.
  171. Wang, Anchuan; Zhang, Jingchun; Ingle, Nitin K.; Lee, Young S., Selective etch of silicon by way of metastable hydrogen termination.
  172. Wang, Anchuan; Zhang, Jingchun; Ingle, Nitin K.; Lee, Young S., Selective etch of silicon by way of metastable hydrogen termination.
  173. Chen, Zhijun; Li, Zihui; Wang, Anchuan; Ingle, Nitin K.; Venkataraman, Shankar, Selective etch of silicon nitride.
  174. Chen, Zhijun; Li, Zihui; Wang, Anchuan; Ingle, Nitin K.; Venkataraman, Shankar, Selective etch of silicon nitride.
  175. Citla, Bhargav; Ying, Chentsau; Nemani, Srinivas; Babayan, Viachslav; Stowell, Michael, Selective etch using material modification and RF pulsing.
  176. Wang, Xikun; Ingle, Nitin, Selective in situ cobalt residue removal.
  177. Hoinkis, Mark; Miyazoe, Hiroyuki; Joseph, Eric, Selective sputtering for pattern transfer.
  178. Wang, Yunyu; Wang, Anchuan; Zhang, Jingchun; Ingle, Nitin K.; Lee, Young S., Selective suppression of dry-etch rate of materials containing both silicon and nitrogen.
  179. Wang, Yunyu; Wang, Anchuan; Zhang, Jingchun; Ingle, Nitin K.; Lee, Young S., Selective suppression of dry-etch rate of materials containing both silicon and oxygen.
  180. Liu, Jie; Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K.; Park, Seung; Chen, Zhijun; Hsu, Ching-Mei, Selective titanium nitride etching.
  181. Liu, Jie; Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K.; Park, Seung; Chen, Zhijun; Hsu, Ching-Mei, Selective titanium nitride etching.
  182. Wang, Xikun; Wang, Anchuan; Ingle, Nitin K.; Lubomirsky, Dmitry, Selective titanium nitride removal.
  183. Wang, Xikun; Wang, Anchuan; Ingle, Nitin K.; Lubomirsky, Dmitry, Selective titanium nitride removal.
  184. Wang, Xikun; Ingle, Nitin, Selective tungsten removal.
  185. Pandit, Mandar B.; Wang, Anchuan; Ingle, Nitin K., Self-aligned process.
  186. Arnepalli, Ranga Rao; Goradia, Prerna Sonthalia; Visser, Robert Jan; Ingle, Nitin; Korolik, Mikhail; Biswas, Jayeeta; Lodha, Saurabh, Self-limiting atomic thermal etching systems and methods.
  187. Lubomirsky, Dmitry; Chen, Xinglong; Venkataraman, Shankar, Semiconductor processing systems having multiple plasma configurations.
  188. Yang, Jang-Gyoo; Chen, Xinglong; Park, Soonam; Baek, Jonghoon; Garg, Saurabh; Venkataraman, Shankar, Semiconductor processing with DC assisted RF power for improved control.
  189. Yang, Jang-Gyoo; Chen, Xinglong; Park, Soonam; Baek, Jonghoon; Garg, Saurabh; Venkataraman, Shankar, Semiconductor processing with DC assisted RF power for improved control.
  190. Nguyen, Andrew; Ramaswamy, Kartik; Nemani, Srinivas; Howard, Bradley; Vishwanath, Yogananda Sarode, Semiconductor system assemblies and methods of operation.
  191. Yoshioka, Junichiro; Mukaiyama, Yoshitaka, Semiconductor wafer holder and electroplating system for plating a semiconductor wafer.
  192. Yoshioka, Junichiro; Mukaiyama, Yoshitaka, Semiconductor wafer holder and electroplating system for plating a semiconductor wafer.
  193. Yoshioka, Junichiro; Mukaiyama, Yoshitaka, Semiconductor wafer holder and electroplating system for plating a semiconductor wafer.
  194. Yoshioka, Junichiro; Mukaiyama, Yoshitaka, Semiconductor wafer holder and electroplating system for plating a semiconductor wafer.
  195. Ko, Jungmin; Choi, Tom; Ingle, Nitin; Kim, Kwang-Soo; Wou, Theodore, SiN spacer profile patterning.
  196. Park, Seung; Wang, Anchuan, Silicon etch process with tunable selectivity to SiO2 and other materials.
  197. Korolik, Mikhail; Ingle, Nitin K.; Wang, Anchuan; Xu, Jingjing, Silicon germanium processing.
  198. Chen, Zhijun; Wang, Anchuan; Ingle, Nitin K., Silicon oxide selective removal.
  199. Huang, Jiayin; Chen, Zhijun; Wang, Anchuan; Ingle, Nitin, Silicon pretreatment for nitride removal.
  200. Li, Zihui; Hsu, Ching-Mei; Zhang, Hanshen; Zhang, Jingchun, Silicon selective removal.
  201. Chen, Zhijun; Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K., Silicon-carbon-nitride selective etch.
  202. Lopatin,Sergey D.; Shanmugasundrum,Arulkumar; Shacham Diamand,Yosef, Silver under-layers for electroless cobalt alloys.
  203. Kim, Hun Sang; Choi, Jinhan; Koseki, Shinichi, Simplified litho-etch-litho-etch process.
  204. Luere, Olivier; Kang, Sean S.; Nemani, Srinivas D., Spacer formation.
  205. Husain,Anwar; Brown,Brian J.; Andeen,David G.; Sherman,Svetlana; White,John M.; Sugarman,Michael; Inagawa,Makoto; Birang,Manoocher, Spin-rinse-dryer.
  206. Ishihara, Akira; Matsushita, Michiaki; Sakata, Yukihiko, Substrate dual-side processing apparatus.
  207. Goodman, Daniel; Keigler, Arthur; Guarnaccia, David G., Substrate holder.
  208. Donald J. K. Olgado ; Jayant Lakshmikanthan, Substrate holder system with substrate extension apparatus and associated method.
  209. Yoshioka, Junichiro; Katsuoka, Seiji; Sekimoto, Masahiko; Endo, Yasuhiko; Guo, Yugang, Substrate holder, plating apparatus, and plating method.
  210. Yoshioka, Junichiro; Katsuoka, Seiji; Sekimoto, Masahiko; Endo, Yasuhiko; Guo, Yugang, Substrate holder, plating apparatus, and plating method.
  211. Goodman, Daniel; Keigler, Arthur; Fisher, Freeman, Substrate loader and unloader.
  212. Hongo,Akihisa; Ogure,Naoaki; Inoue,Hiroaki; Sendai,Satoshi; Ikegami,Tetsuma; Mishima,Koji; Okuyama,Shuichi; Nagai,Mizuki; Kimizuka,Ryoichi; Maruyama,Megumi, Substrate plating method and apparatus.
  213. Kumekawa,Masayuki, Substrate processing apparatus.
  214. Katsuoka, Seiji; Sekimoto, Masahiko; Yokoyama, Toshio; Watanabe, Teruyuki; Ogawa, Takahiro; Kobayashi, Kenichi; Miyazaki, Mitsuru; Motoshima, Yasuyuki; Owatari, Akira; Dai, Naoki, Substrate processing apparatus and substrate processing method.
  215. Koyama,Yoshihiro; Mizohata,Yasuhiro, Substrate processing apparatus and substrate processing method.
  216. Kuwahara, Joji, Substrate processing apparatus and substrate processing method.
  217. Kondo, Fumio; Mishima, Koji; Tanaka, Akira; Suzuki, Yoko; Togawa, Tetsuji; Inoue, Hiroaki, Substrate processing method.
  218. Kondo, Fumio; Mishima, Koji; Tanaka, Akira; Suzuki, Yoko; Togawa, Tetsuji; Inoue, Hiroaki, Substrate processing method.
  219. Kondo,Fumio; Mishima,Koji; Tanaka,Akira; Suzuki,Yoko; Togawa,Tetsuji; Inoue,Hiroaki, Substrate processing method.
  220. Lubomirsky,Dmitry, Substrate support with fluid retention band.
  221. Woo Sik Yoo, System and method for providing defect free rapid thermal processing.
  222. Hoermann, Alexander F.; Rabinovich, Yevgeniy; Ta, Kathryn P., System and methods for measuring chemical concentrations of a plating solution.
  223. Wilson, Gregory J.; McHugh, Paul R.; Hanson, Kyle M., System for electrochemically processing a workpiece.
  224. Benjaminson, David; Lubomirsky, Dmitry, Thermal management systems and methods for wafer processing systems.
  225. Wang, Xikun; Pandit, Mandar; Wang, Anchuan; Ingle, Nitin K., Titanium nitride removal.
  226. Wang, Xikun; Xu, Lin; Wang, Anchuan; Ingle, Nitin K., Titanium oxide etch.
  227. Liu, Jie; Wang, Xikun; Park, Seung; Korolik, Mikhail; Wang, Anchuan; Ingle, Nitin K., Tungsten oxide processing.
  228. Wang, Xikun; Liu, Jie; Wang, Anchuan; Ingle, Nitin K., Tungsten separation.
  229. Wilson,Gregory J.; McHugh,Paul R.; Weaver,Robert A.; Ritzdorf,Thomas L., Tuning electrodes used in a reactor for electrochemically processing a microelectronic workpiece.
  230. Wilson,Gregory J.; McHugh,Paul R.; Weaver,Robert A.; Ritzdorf,Thomas L., Tuning electrodes used in a reactor for electrochemically processing a microelectronic workpiece.
  231. Wilson,Gregory J.; McHugh,Paul R.; Weaver,Robert A.; Ritzdorf,Thomas L., Turning electrodes used in a reactor for electrochemically processing a microelectronic workpiece.
  232. Mok,Yeuk Fai Edwin; Nguyen,Son T., Two position anneal chamber.
  233. Klein,Martin P.; Keigler,Arthur; Felsenthal,David, Ultra-thin wafer handling system.
  234. Cao, Yang; Ma, Yue; Chen, Jir-shyr; Rastogi, Rajiv, Using cell voltage as a monitor for deposition coverage.
  235. Cao,Yang; Ma,Yue; Chen,Jir shyr; Rastogi,Rajiv, Using cell voltage as a monitor for deposition coverage.
  236. Wang, Xikun; Wang, Anchuan; Ingle, Nitin K., V trench dry etch.
  237. Liu, Jie; Purayath, Vinod R.; Wang, Xikun; Wang, Anchuan; Ingle, Nitin K., Vertical gate separation.
  238. Hongo, Akihisa; Morisawa, Shinya, Wafer cleaning apparatus.
  239. Hongo,Akihisa; Morisawa,Shinya, Wafer cleaning apparatus.
  240. Wilson,Gregory J.; McHugh,Paul R.; Hanson,Kyle M., Workpiece processor having processing chamber with improved processing fluid flow.
섹션별 컨텐츠 바로가기

AI-Helper ※ AI-Helper는 오픈소스 모델을 사용합니다.

AI-Helper 아이콘
AI-Helper
안녕하세요, AI-Helper입니다. 좌측 "선택된 텍스트"에서 텍스트를 선택하여 요약, 번역, 용어설명을 실행하세요.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.

선택된 텍스트

맨위로