초록 ▼

Low dielectric inter-metal dielectric (IMD) layers made of hydrogen silsesquioxane (HSQ) or methyl silsesquioxane (MSQ) spin-on-glass do not have good thermal conductivity as compared to regular oxides, in addition the adhesion of HSQ or MSQ is worse than that of oxide to oxide layers Methods are di

Low dielectric inter-metal dielectric (IMD) layers made of hydrogen silsesquioxane (HSQ) or methyl silsesquioxane (MSQ) spin-on-glass do not have good thermal conductivity as compared to regular oxides, in addition the adhesion of HSQ or MSQ is worse than that of oxide to oxide layers Methods are disclosed and illustrated to improve the heat transfer by providing metal dummy plugs under and/or around bonding pads or between metallization layers. The arrangement and numbers of dummy plugs depends on the heat to be transferred and varies with the application. Good thermal conductivity is of particular importance because the effects of high local temperature around bonding pads during chip bonding results in thermal stress and delamination of the IMD layers. The use of bonding pads provides other benefits aswell.

대표청구항 ▼

[ What is claimed is:] [1.]1. A method of providing dummy plugs on a semiconductor wafer, comprising the steps of:depositing at least one set of an inter-metal dielectric layer and following metallization layer on top of said semiconductor wafer;providing each said metallization layer with a plurali

[ What is claimed is:] [1.]1. A method of providing dummy plugs on a semiconductor wafer, comprising the steps of:depositing at least one set of an inter-metal dielectric layer and following metallization layer on top of said semiconductor wafer;providing each said metallization layer with a plurality of metal lines;depositing a final inter-metal dielectric layer on top of a final metallization layer;placing at least one bonding pad on top of said final inter-metal dielectric layer; andproviding a plurality of dummy plugs underneath at least one of said bonding pads, said dummy plugs penetrating said final inter-metal dielectric layer, where said dummy plugs, in addition to improved moisture release, reduce delamination of said inter-metal dielectric layers to other oxide layers.