초록 ▼

In a thin film transistor (TFT), a mask is formed on a gate electrode, and a porous anodic oxide is formed in both sides of the gate electrode using a relatively low voltage. A barrier anodic oxide is formed between the gate electrode and the porous anodic oxide and on the gate electrode using a rel

In a thin film transistor (TFT), a mask is formed on a gate electrode, and a porous anodic oxide is formed in both sides of the gate electrode using a relatively low voltage. A barrier anodic oxide is formed between the gate electrode and the porous anodic oxide and on the gate electrode using a relatively high voltage. A gate insulating film is etched using the barrier anodic oxide as a mask. The porous anodic oxide is selectively etched after etching barrier anodic oxide, to obtain a region of an active layer on which the gate insulating film is formed and the other region of the active layer on which the gate insulating film is not formed. An element including at least one of oxygen, nitrogen and carbon is introduced into the region of the active layer at high concentration in comparison with a concentration of the other region of the active layer. Further, N- or P-type impurity is introduced into the active layer. Accordingly, high resistance impurity regions are formed in both sides of a channel forming region.

대표청구항 ▼

[ What is claimed is:] [1.]1. A semiconductor device comprising:a pixel electrode formed over a substrate;a first thin film transistor electrically connected to said pixel electrode;a driver circuit for driving said first thin film transistor, said driver circuit comprising at least one second thin

[ What is claimed is:] [1.]1. A semiconductor device comprising:a pixel electrode formed over a substrate;a first thin film transistor electrically connected to said pixel electrode;a driver circuit for driving said first thin film transistor, said driver circuit comprising at least one second thin film transistor formed over said substrate, each of said first and second thin film transistors comprising:a semiconductor film formed on an insulating surface over said substrate;a channel region formed in said semiconductor film;source and drain regions formed in said semiconductor film with said channel region therebetween wherein said source and drain regions are doped with an impurity for giving one conductivity type thereto; andat least one impurity doped region of said first thin film transistor along a direction in which carriers of said first thin film transistor flow is not smaller than 0.4 .mu.m, andwherein a length of said impurity doped region of said second thin film transistor is smaller than said length of the impurity doped region of the first thin film transistor.