초록

A semiconductor device using a TFT including a multilayered gate electrode and an LDD region partially overlapping with the multilayered gate electrode via a gate insulating film is provided.

대표청구항 ▼

[ What is claimed is:] [1.]1. A semiconductor device having at least one thin film transistor, said thin film transistor comprising:a semiconductor film over a substrate having an insulatling surface, said semiconductor film having a channel region with first and second sides and a pair of impurity

[ What is claimed is:] [1.]1. A semiconductor device having at least one thin film transistor, said thin film transistor comprising:a semiconductor film over a substrate having an insulatling surface, said semiconductor film having a channel region with first and second sides and a pair of impurity regions on both sides of said channel region;at least one gate electrode adjacent to said semiconductor film with a gate insulating film interposed therebetween, said gate electrode being formed of a multilayer film including in consequence a first conductive layer laminated on said gate insulating film, a second conductive layer, and a third conductive layer,wherein said pair of impurity regions partially overlaps said gate electrode with said gate insulating film interposed therebetween; andwherein said second conductive layer comprises aluminum.