초록 ▼

An organic semiconductor film is fabricated by applying a solution containing an organic semiconductor material and a solvent to a substrate, e.g., by solution casting, and evaporating the solvent. The characteristics of the substrate surface, the organic semiconductor material, and the process para

An organic semiconductor film is fabricated by applying a solution containing an organic semiconductor material and a solvent to a substrate, e.g., by solution casting, and evaporating the solvent. The characteristics of the substrate surface, the organic semiconductor material, and the process parameters are selected to provide desirable nucleation and crystal growth. The resultant organic semiconductor film contains a large area, e.g., a continuous area greater than 1 cm.sup.2, that exhibits a relatively high charge carrier mobility of at least about 10.sup.-4 cm.sup.2 V.sup.- s.sup.-1 at room temperature.

대표청구항 ▼

[ What is claimed is:] [1.]1. A process for fabricating an organic circuit, comprising the steps of:providing a substrate, the substrate optionally comprising a polymeric dielectric layer formed thereon;providing a solution comprising a solvent and an organic semiconductor compound;treating the subs

[ What is claimed is:] [1.]1. A process for fabricating an organic circuit, comprising the steps of:providing a substrate, the substrate optionally comprising a polymeric dielectric layer formed thereon;providing a solution comprising a solvent and an organic semiconductor compound;treating the substrate surface or the dielectric layer surface with a reagent that acts to bind groups onto the surface, wherein the bound groups decrease the wettability of the surface relative to the solution;applying the solution to the treated surface by a non-spinning technique, wherein the bound groups on the surface provide for a contact angle between the solution and the surface of at least 50.degree.; andevaporating the solvent to form an organic semiconductor film comprising a continuous area greater than 1 cm.sup.2 that exhibits a charge carrier mobility of at least about 10.sup.-4 cm.sup.2 V.sup.-1 s.sup.-1 at room temperature.