초록 ▼

A process for forming metal interconnect structures, and metal via structures, using electroplating, or electroless plating procedures, has been developed. The process features the use of disposable conductive layers, used as seed layers for the plating procedures. After formation of the desired met

A process for forming metal interconnect structures, and metal via structures, using electroplating, or electroless plating procedures, has been developed. The process features the use of disposable conductive layers, used as seed layers for the plating procedures. After formation of the desired metal structures, on the portion of seed layer, exposed in an opening in the photoresist shape, the photoresist shape, and the underlying portion of the disposable conductive layer, are removed, resulting in the desired metal structures.

대표청구항 ▼

[ What is claimed is:] [1.]1. A method of fabricating metal interconnect structures, and metal via structures, on a semiconductor substrate, comprising the steps of:providing a first metal via structure, in a first insulator layer, with the top surface of the first metal via structure, exposed;depos

[ What is claimed is:] [1.]1. A method of fabricating metal interconnect structures, and metal via structures, on a semiconductor substrate, comprising the steps of:providing a first metal via structure, in a first insulator layer, with the top surface of the first metal via structure, exposed;depositing a blanket first disposable conductive layer on a planar top surface topography, comprised of the top surface of said first insulator layer, and comprised of the top surface of said first metal via structure;forming a first defining shape, on said blanket first disposable conductive layer, with a first opening, in said first defining shape, exposing a first portion of said blanket first disposable conductive layer that directly overlays the top surface of said first metal via structure;forming an electroplated copper interconnect structure, on the portion of said blanket first disposable conductive layer, exposed in said first opening, of said first defining shape;removing said first defining shape;removing the portion of said blanket first disposable conductive layer, not covered by said electroplated copper interconnect structure, from the top surface of said first insulator layer using said electroplated copper interconnect structure as an etch mask;depositing a second insulator layer;planarizing said second insulator layer, exposing the top surface of said metal interconnect structure;depositing a blanket second disposable conductive layer, on a planarized top surface of said second insulator layer;forming a second defining shape, on said blanket second disposable conductive layer, with a second opening, in said second defining shape, exposing the portion of said blanket second disposable conductive layer that directly overlays a portion of the top surface of said electroplated copper interconnect structure;forming a second metal via structure, comprised of electroplated copper, on the portion of said blanket second disposable conductive layer, exposed in said second opening, in said second defining shape;removing said second defining shape; andremoving the portion of said blanket second disposable conductive layer, not covered by said second metal via.