초록 ▼

A wet-oxidation apparatus comprises a reaction tube capable of accommodating a semiconductor wafer; a water vapor generating apparatus for generating water vapor; a gas supply passage for supplying gas into the reaction tube; a discharge passage; an inert gas supply unit for supplying an inert gas;

A wet-oxidation apparatus comprises a reaction tube capable of accommodating a semiconductor wafer; a water vapor generating apparatus for generating water vapor; a gas supply passage for supplying gas into the reaction tube; a discharge passage; an inert gas supply unit for supplying an inert gas; a gas switching unit capable of switching between the water vapor from the water vapor generating unit and the inert gas from the inert gas supply unit, so as to supply either one of the water vapor and the inert gas to the gas supply passage; and a control unit controlling such that: at least while wet-oxidation processing of the semiconductor wafer are conducted predetermined times in the reaction tube, the water vapor generating apparatus continuously generates the water vapor; whenever the wet-oxidation processing is started one time, the water vapor from the water vapor generating apparatus is switched toward the gas supply passage; and whenever the wet-oxidation processing is completed one time, the water vapor from the water vapor generating apparatus is switched toward the discharge passage, and the inert gas from the inert gas supply unit is supplied to the gas supply passage.

대표청구항 ▼

[ What is claimed is:] [1.]1. A wet-oxidation apparatus, comprising:a reaction tube capable of accommodating a semiconductor wafer or semiconductor wafers;a water vapor generating apparatus for generating water vapor;a gas supply passage for supplying gas into said reaction tube;a discharge passage;

[ What is claimed is:] [1.]1. A wet-oxidation apparatus, comprising:a reaction tube capable of accommodating a semiconductor wafer or semiconductor wafers;a water vapor generating apparatus for generating water vapor;a gas supply passage for supplying gas into said reaction tube;a discharge passage;a gas switching unit capable of switching the water vapor from said water vapor generating apparatus into either one of said gas supply passage and said discharge passage; anda control unit capable of controlling said water vapor generating apparatus and said gas switching unit, wherein said control unit controls such that,at least while wet-oxidation processing of said semiconductor wafer or wafers is conducted predetermined times in said reaction tube, said water vapor generating apparatus continuously generates the water vapor,whenever said wet-oxidation processing is started one time, said control unit switches the water vapor from said water vapor generating apparatus toward said gas supply passage, andwhenever said wet-oxidation processing is completed one time, said control unit switches the water vapor from said water vapor generating apparatus toward said discharge passage.