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A system for electroplating a semiconductor wafer is set forth. The system comprises a first electrode in electrical contact with the semiconductor wafer and a second electrode. The first electrode and the semiconductor wafer form a cathode during electroplating of the semiconductor wafer. The secon

A system for electroplating a semiconductor wafer is set forth. The system comprises a first electrode in electrical contact with the semiconductor wafer and a second electrode. The first electrode and the semiconductor wafer form a cathode during electroplating of the semiconductor wafer. The second electrode forms an anode during electroplating of the semiconductor wafer. A reaction container defining a reaction chamber is also employed. The reaction chamber comprises an electrically conductive plating solution. At least a portion of each of the first electrode, the second electrode, and the semiconductor wafer contact the plating solution during electroplating of the semiconductor wafer. An auxiliary electrode is disposed exterior to the reaction chamber and positioned for contact with plating solution exiting the reaction chamber during cleaning of the first electrode to thereby provide an electrically conductive path between the auxiliary electrode and the first electrode. A power supply system is connected to supply plating power to the first and second electrodes during electroplating of the semiconductor wafer and is further connected to render the first electrode an anode and the auxiliary electrode a cathode during cleaning of the first electrode.

대표청구항 ▼

[ What is claimed is:] [13.]13. A method for operating a system used to electroplate a semiconductor wafer, the system comprising a first electrode for contacting the semiconductor wafer, a second electrode functioning as an anode during electroplating of the semiconductor wafer, an electrically con

[ What is claimed is:] [13.]13. A method for operating a system used to electroplate a semiconductor wafer, the system comprising a first electrode for contacting the semiconductor wafer, a second electrode functioning as an anode during electroplating of the semiconductor wafer, an electrically conductive plating solution disposed in a reaction chamber, and an auxiliary electrode disposed exterior to the reaction chamber and a fluid flow path of plating solution exiting the reaction chamber, the semiconductor wafer and first and second electrodes being in contact with the plating solution in the reaction chamber during electroplating of the semiconductor wafer, the method comprising the steps of:providing a flow of plating solution from the reaction chamber to the auxiliary electrode to create an electrically conductive path between the first electrode and the auxiliary electrode;applying electrical power between the first electrode and the auxiliary electrode in which the auxiliary electrode functions as a cathode and the first electrode functions as an anode to thereby remove at least a portion of a metal electroplated onto the first electrode during a prior semiconductor wafer electroplating operation.